GAAS IMPATT DIODE W BAND Search Results

schematic WELDER

Abstract: gold melting furnace ultrasonic bond
Contextual Info: Bonding and Handling Procedures for Chip Devices DISCUSSION Chip diode devices for use in integrated circuit and hybrid integrated circuits have proliferated in the last few years. Today's circuit designer is faced with a multiplicity of alter­ natives in the selection of diodes and packaging with each

Contextual Info: Pgfltt G E C P L E S S E Y DS3410-1.2 DC4600/4700 Series GaAs HYPERABRUPT TUNING VARACTORS The introduction of hyperabrupt junction varactors brings the advantages of linear electronic tuning to the microwave circuit designer. GEC Plessy Semiconductors Microwave's

GUNN DIODE plessey

Abstract: E1018 impatt Gunn Diode plessey impatt DC4702-3 barrier varactor gunn diode oscillator DC4601-4 DC4602-3
Contextual Info: 37tflSE2 0 0 1 8 5 7 0 1TE • P L S B Si GEC PLESSEY S E M I C O N D U C T O R S D S 3 4 1 0 - 1.2 DC4600/4700 Series GaAs HYPERABRUPT TUNING VARACTORS The introduction of hyperabrupt junction varactors brings the advantages of linear electronic tuning to the microwave

millimeter wave radar

Abstract: DIODE ED 92 GaAs Gunn Diode 24 GaAs impatt diode W band
Contextual Info: Afacm MA48700 Series GaAs Multiplier Varactors Features • HIGH CUTOFF FREQUENCY ■ OPERATING TEMPERATURES FROM - 65°C to + 200°C ■ GUARANTEED REPRODUCIBILITY Applications The MA48700 series of Gallium Arsenide Abrupt Junction Multiplier Varactors is specifically designed to provide

missile seeker

Abstract: varactor diode for x band radar radar detector leakage police radar detector Q4000 GaAs impatt diode W band
Contextual Info: MA45200 Series Silicon Abrupt Junction Tuning Varactors Features • HIGH Q ■ LOW LEAKAGE ■ AVAILABLE IN CHIP FORM 30 J — 'V 3 El ~ r ■ ■ ■ ■ AVAILABLE IN CERAMIC PACKAGES CUSTOM DESIGNS AVAILABLE LOW POST TUNING DRIFT FREQUENCY RANGE VHF —

gunn diode ghz s-parameter

Abstract: impatt diode impatt C band FET transistor s-parameters fet dro 10 ghz x-band dro california bearing ratio test DRO lnb 25 MHz $ pin Crystal Oscillators THrough hole type Dielectric Resonator Oscillator DRO
Contextual Info: California Eastern Laboratories APPLICATION NOTE AN1035 Design Considerations for a Ku-Band DRO in Digital Communication Systems ABSTRACT the parts for the DRO and mechanical assembly will be presented. While the design proposed might not yield the optimum design solution for all DBS applications, it does introduce a few important DRO design techniques that can be applied to other high frequency communication systems.

impatt diode

Abstract: IMPATT-Diode Dielectric Constant Silicon Nitride N00014-87-K-0243 "x-ray detector" electrochemical gas sensors datasheet Zinc sulfide SCI mttf impatt transistor b 1238
Contextual Info: Custom Product Papers and Briefs PECVD Diamond Films for Use in Silicon Microstructures John A. Herb and Michael G. Peters—Crystallume, Menlo Park, CA Stephen C. Terry and J. H. Jerman—IC Sensors, Milpitas, CA ABSTRACT and 3 times higher than silicon nitride. In addition, the dry

Gunn Diode

Abstract: gunn diode oscillator gunn diode generator Gunn Diode at power supply circuit two cavity resonator GaAs Gunn Diode 24 GaAs Gunn Diode impatt varactor diode for x band radar DIODE TH 5 N
Contextual Info: A ffe Application Note Gunn Diode/Oscillator M514 Description The Gunn diode is a gallium arsenide GaAs device capable of converting direct current (dc) power into radio frequency (RF) power when inserted in an appropriate cavity. This RF power is the result o f a bulk negative resistance property

8-12 GHz Yig Tuned Oscillator

Abstract: PM7015X yig oscillator hp electromagnetic pulse generator jammer SIVERS yig PM7892 PM7288X 8-12 GHz Yig Tuned filter PM7101X x-band waveguide isolators
Contextual Info: PHILIPS & Microwave Products s iv a ts a m The Company SIVERS IMA In January 1984 the two microwave companies Sivers Lab est. 1951 and I.M.A. (est. 1975) were merged into one of the leading European supplier of microwave products: SIVERS IMA AB. The main product lines are Switches, Rotary Joints,

transistor A562

Abstract: A561 transistor trapatt diode A4 transistor A562 transistor transistor a561 transistor smd marking a73 reverse-conducting thyristor trapatt A5 DIODE
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 April 2011. INCH-POUND MIL-PRF-19500P 20 October 2010 SUPERSEDING MIL-PRF-19500N 30 November 2005 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICES,

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

IAO5 Sharp

Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
Contextual Info: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The

JRC 45600

Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
Contextual Info: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES

GFB7400D

Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409
Contextual Info: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest