IMPATT Search Results

Contextual Info: 4613303 HUGHES, 95D MICROWAVE PRDTS 00486 D T -* 7 -// SECTION MILLIMETER-WAVE DIODES IMPATT Diodes and Test Fixtures TS DE | 4L13303 □□□04flb 4 3 Hughes 4710xH series IMPATT diodes are silicon double '• - drift diodes mounted in hermetically sealed packages and :

impatt diode

Abstract: apc-7 connector impatt impatt diode operation radar impatt CW doppler radar Silicon drift diode hp 0611 diode GG 14
Contextual Info: H E W L E T T PACKARD COMPONENTS DIODES HIGH POWER, HIGH EFFICIENCY SILICON DOUBLE DRIFT IMPATT DIODES FOR CW POWER SOURCES 10-14 GHZ Features AND STEP RECOVERY HIGH POWER O U TP U T Typically: 2.5W from 10 to 14 GHz HIGH EFFICIENCY LOW NOISE HIGH A M B IEN T O PERATIO N

Contextual Info: PGG203-83 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power50m Frequency Min. (Hz)8.0G Frequency Max. (Hz)12.4G Efficiency Min.3.0 V(Oper.) Nom.(V) Oper. Voltage80 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialSilicon Package StyleScrew

Contextual Info: 5082-0435 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power100m Frequency Min. (Hz)8.0G Frequency Max. (Hz)12G Efficiency Min.3.5 V(Oper.) Nom.(V) Oper. Voltage90 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialSilicon Package StyleScrew Mounting StyleT

Contextual Info: PGG205-83 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power200m Frequency Min. (Hz)8.0G Frequency Max. (Hz)12.4G Efficiency Min.4.0 V(Oper.) Nom.(V) Oper. Voltage90 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialSilicon Package StyleScrew

Contextual Info: RT8121 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power1.0 Frequency Min. (Hz)12G Frequency Max. (Hz) Efficiency Min.18 V(Oper.) Nom.(V) Oper. Voltage40 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialGaAs Package StylePin Mounting StyleS

Contextual Info: RT8701-2 Diodes Pulse-Mode IMPATT Diode P o Min.(W) Output Power7.0 Frequency Min. (Hz)6.0G Frequency Max. (Hz)8.0G Efficiency Min.14 V(Oper.) Nom.(V) Oper. Voltage55 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS

RT8601-2

Contextual Info: RT8601-2 Diodes Pulse-Mode IMPATT Diode P o Min.(W) Output Power7.0 Frequency Min. (Hz)5.0G Frequency Max. (Hz)7.0G Efficiency Min.14 V(Oper.) Nom.(V) Oper. Voltage60 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS

Contextual Info: ND8J80W1T Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power.15 Frequency Min. (Hz)70G Frequency Max. (Hz)87G Efficiency Min.4.5 V(Oper.) Nom.(V) Oper. Voltage16 I(Oper.) Typ.(A) Oper. Current160m Semiconductor MaterialSilicon Package StyleScrew

Contextual Info: VAO32EN22 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power200m Frequency Min. (Hz)6.0G Frequency Max. (Hz)8.0G Efficiency Min.5.5 V(Oper.) Nom.(V) Oper. Voltage110 I(Oper.) Typ.(A) Oper. Current33m Semiconductor MaterialSilicon Package StylePill-C

Contextual Info: VSX9251S1 Diodes Pulse-Mode IMPATT Diode P o Min.(W) Output Power17 Frequency Min. (Hz)8G Frequency Max. (Hz)10G Efficiency Min.19 V(Oper.) Nom.(V) Oper. Voltage60 I(Oper.) Typ.(A) Oper. Current1.5 Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT

impatt diode

Abstract: impatt diode operation IMPATT GaAs impatt diode
Contextual Info: M/A-COM SEMICONDUCTOR M/A-COM SEMICONDUCTOR PRODUCTS OPERATION GaAs IMPATT DIODE SELECTION GUIDE PRODUCTS OPERATION Frequency Range GHz Case Style ODS # 0.5 CW IMPATTS PULSED IMPATT DIODES Minimum CW Output Power in Watts Min. Peak Pulse Power In Watts 1.0

IMPATT

Contextual Info: IMPATT Diodes SELECTION GUIDE MODEL NUMBER PAGE MODEL NUMBER MA46019 MA46020 MA46021 MA46022 MA46023 MA46024 MA46025 MA46026 MA46027 MA46028 MA46029 MA46030 MA46031 MA46032 MA46033 . 10-5 ! 0-5 . 10-9

Diode LT 9250

Abstract: LT 9250 0/Diode LT 9250
Contextual Info: LITTON IND/LITTON SOLI» SbE D • SSMMSDG OODDSOG Ö31 ■ L I T T 7 - Ö / - Ö GALLIUM ARSENIDE CW IMPATT DIODES 9250 Series • • • • 5-21 GHz High C W Output Power High Efficiency— Typically 1 8 -2 0 % Burnout Resistant to Circuit Mismatches High Reliability— Greater than 106 hrs M TTF

impatt diode

Abstract: impatt diode operation impatt diode datasheet impatt impatt diode W band ELVA-1 IC-02K IC-02U IC-015W IM-10PK
Contextual Info: IMPATT Diodes and Test Fixtures Golden contact 0.4 0.15 IMPATT Ruby box Copper Heat Sink with gold covering A • 25-155 GHz frequency range • Pulse and CW version • 20W pulse, 200 mW CW operation • Delivery from stock • Low cost A=5.6 mm, B=3.0 mm for Ka – Band

Contextual Info: MS856B Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power200m Frequency Min. (Hz)15G Frequency Max. (Hz)18G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS

Contextual Info: RT8101-2 Diodes Pulse-Mode IMPATT Diode P o Min.(W) Output Power7.0 Frequency Min. (Hz)10G Frequency Max. (Hz)12G Efficiency Min.14 V(Oper.) Nom.(V) Oper. Voltage45 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS

Contextual Info: VAO12CN21 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power50m Frequency Min. (Hz)8.0G Frequency Max. (Hz)12.4G Efficiency Min.3.0 V(Oper.) Nom.(V) Oper. Voltage70 I(Oper.) Typ.(A) Oper. Current25m Semiconductor MaterialSilicon Package StylePill-C

Contextual Info: PGG205-82 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power200m Frequency Min. (Hz)8.0G Frequency Max. (Hz)12.4G Efficiency Min.4.0 V(Oper.) Nom.(V) Oper. Voltage90 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialSilicon Package StyleScrew

Contextual Info: RT8071 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power1.0 Frequency Min. (Hz)7.0G Frequency Max. (Hz) Efficiency Min.18 V(Oper.) Nom.(V) Oper. Voltage70 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialGaAs Package StylePin Mounting StyleS

Contextual Info: VAO12EN21 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power200m Frequency Min. (Hz)8.0G Frequency Max. (Hz)12.4G Efficiency Min.5.5 V(Oper.) Nom.(V) Oper. Voltage80 I(Oper.) Typ.(A) Oper. Current45m Semiconductor MaterialSilicon Package StylePill-C

MA460

Abstract: APC7 connector impatt diode a4602 A4604 IMPATT impatt diode operation
Contextual Info: jyfocôYi MA46021-MA46049 Series CW Gallium Arsenide IMPATT Diodes 0.5-4 Watts C,X, and Ku-Band Features • DIRECT CONVERSION FOR DC TO RF WITH >15% EFFICIENCY LOW-HIGH-LOW ■ DIRECT CONVERSION FOR DC TO RF WITH > 10% EFFICIENCY (FLAT PROFILE) ■ LOW AM AND FM NOISE

impatt diode

Abstract: impatt diode operation AN961 5082-0710 IMPATT
Contextual Info: 5082-0710 X-BAND 5082-0716 Ku-BAIMD SILICON DOUBLE DRIFT IMPATT DIODES FOR PULSED POWER SOURCES H E W L E T T ^ PACKARD COMPONENTS Features HIGH PEAK POWER Typically Greater Than 14W Peak at 10 GHz, and 11W Peak at 16 GHz HIGH AVERAGE POWER 25% Duty Cycle at Peak Power Rating

Contextual Info: GaAs IMPATT DIODES TM MI5001 – MI5022 Features Specified High Output Power High DC to Microwave Efficiency For Pulsed and CW Applications Applications Oscillators Avionic Systems Electronic Warfare Systems Smart Antennas Description Microsemi’s GaAs IMPATT diodes are fabricated utilizing