GAAS SCHOTTKY Search Results
GAAS SCHOTTKY Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CUHS15S60 |
|
Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H |
|
||
| CUHS20F30 |
|
Schottky Barrier Diode (SBD), 30 V, 2 A, US2H |
|
||
| CUHS15S40 |
|
Schottky Barrier Diode (SBD), 40 V, 1.5 A, US2H |
|
||
| CUHS15S30 |
|
Schottky Barrier Diode (SBD), 30 V, 1.5 A, US2H |
|
||
| CUHS10F60 |
|
Schottky Barrier Diode (SBD), 60 V, 1 A, US2H |
|
GAAS SCHOTTKY Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
M 1661 SContextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC2415A C - Ku BAND MEDIUM-POWER GaAs FET DESCRIPTION The MGFC2400 series GaAs FETs were designed for high frequency, medium and high power GaAs FET with N-channel Schottky barrier gate type. FEATURES • High output power |
OCR Scan |
MGFC2415A MGFC2400 150mA M 1661 S | |
|
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC2407A C - Ku BAND MEDIUM-POWER GaAs FET DESCRIPTION The MGFC2400 series GaAs FETs were designed for high frequency, medium and high power GaAs FET with N-channel Schottky barrier gate type. FEATURES • High output power |
OCR Scan |
MGFC2407A MGFC2400 | |
Silicon Point Contact Mixer Diodes
Abstract: Mixer Silicon Detector
|
OCR Scan |
||
k 1413 FET
Abstract: mitsubishi microwave MGF1801B MGF1801 MGF1
|
Original |
MGF1801B MGF1801B, 23dBm June/2004 k 1413 FET mitsubishi microwave MGF1801B MGF1801 MGF1 | |
MGF1601B
Abstract: mitsubishi microwave MGF1601
|
Original |
MGF1601B MGF1601B, MGF1601B mitsubishi microwave MGF1601 | |
|
Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1801B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package |
OCR Scan |
MGF1801B MGF1801B, 23dBm 100mA | |
k 1413 FET
Abstract: MGF1601B MGF1601
|
Original |
MGF1601B MGF1601B, k 1413 FET MGF1601B MGF1601 | |
MGF1801B
Abstract: Microwave power GaAs
|
Original |
MGF1801B MGF1801B, 23dBm MGF1801B Microwave power GaAs | |
E 212 fet
Abstract: MGF1801BT
|
OCR Scan |
MGF1801BT MGF1801BT 23dBm 100mA E 212 fet | |
ha 1406 haContextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1801B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package |
OCR Scan |
MGF1801B MGF1801B, ha 1406 ha | |
MGF1801
Abstract: IG200 mitsubishi microwave MGF1801BT
|
OCR Scan |
MGF1801 MGF1801BT MGF1801BT 23dBm 100mA IG200 mitsubishi microwave | |
MGF1801BTContextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1801BT TAPE CARRIER MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801BT , medium-power GaAs FET with an N-channel Schottky gate , is designed for use S-X band amplifiers and oscillators. The hermetically sealed metal-ceramic package |
OCR Scan |
MGF1801BT MGF1801BT 23dBm 100mA | |
FET K 1358
Abstract: MGF0916A gp 752 9452 smd
|
Original |
MGF0916A MGF0916A 23dBm 100mA 50pcs) FET K 1358 gp 752 9452 smd | |
MGF0913AContextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0913A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=1.9GHz,Pin=18dBm |
Original |
MGF0913A MGF0913A 31dBm 18dBm 200mA 50pcs) | |
|
|
|||
MGF0913AContextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0913A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=1.9GHz,Pin=18dBm |
Original |
MGF0913A MGF0913A 31dBm 18dBm 200mA 50pcs) June/2004 | |
5687 general electric
Abstract: mitsubishi 1183 MGF0912A
|
Original |
MGF0912A MGF0912A 33dBm June/2004 5687 general electric mitsubishi 1183 | |
MGF0909
Abstract: MGF0909a J10-0025
|
Original |
MGF0909A MGF0909A, 38dBm 20dBm MGF0909 MGF0909a J10-0025 | |
FET K 1358
Abstract: 9452 smd MGF0916A fet smd 2657 FET
|
Original |
MGF0916A MGF0916A 23dBm 100mA 50pcs) June/2004 FET K 1358 9452 smd fet smd 2657 FET | |
|
Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF0909A L, S BAND POWER GaAs FET DESCRIPTION OUTLINE DRAWING Unit:millimeiers The MGF0909A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. y FEATURES • High output power PidB=38dBm(TYP.) |
OCR Scan |
MGF0909A MGF0909A, 38dBm 20dBm | |
LT 0842Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF0910A L, S BAND POWER GaAs FET DESCRIPTION The MGF0910A, GaAs FET with an N-channel schottky gale, is designed for use in UHF band amplifiers. FEATURES ♦ Class A operation ♦ High oulpul power PidB=38dBm(TYP) @2.3GHz |
OCR Scan |
MGF0910A MGF0910A, 38dBm LT 0842 | |
|
Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF0911A L, S BAND POWER GaAs FET DESCRIPTION The MGF0911A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. FEATURES • Class A operation • High output power PidB=41dBm(TYP) @2.3GHz |
OCR Scan |
MGF0911A MGF0911A, 41dBm | |
MGF1601Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1601B MICROWAVE POWER GaAs FET DESCRIPTION OUTLINE DRAWING U n itm illim e te rs The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The |
OCR Scan |
MGF1601B MGF1601B, 100mA Pro54 MGF1601 | |
MGF0953PContextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0953P L & S BAND GaAs FET Plastic Mold Lead-less PKG1 DESCRIPTION The MGF0953P GaAs FET with an N-channel schottky gate, is designed for use L & S band amplifiers. FEATURES •High output power Po = 28.0dBm TYP. @ f=2.15GHz,Pin=10dBm |
OCR Scan |
MGF0953P MGF0953P 15GHz 10dBm 15GHz 25deg | |
|
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0953P L & S BAND GaAs FET fPlastic Mold Lead-less PKG1 DESCRIPTION The MGF0953P GaAs FET with an N-channel schottky gate, is designed for use L & S band amplifiers. FEATURES •High output power Po = 28.0dBm TYP. @f=2.15GHz,Pin=10dBm |
OCR Scan |
MGF0953P MGF0953P 15GHz 10dBm 15GHz 25deg | |