MGF1 Search Results

MGF1402B

Abstract: MGF1402
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1402B LOW NOISE GaAs FET MITSUBISHI ELECTRIC

Contextual Info: 0017072 MITSUBISHI SEMICONDUCTOR <GaAs FET> 1S7 MGF1923 TAPE CARRIER SMALL SIGNAL GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters linches The M G F 1 9 2 3 , low noise GaAs FET with an N-channel 4 .0 ± 0 .2 Schottky gate, is designed for use in S to Ku band ampli­

MGF1801B

Abstract: MGF1801
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1801B f i MICROWAVE POWER GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 1 8 0 1 B , m ed iu m -p o w e r GaAs FET w ith an Nchannel S ch o ttky gate, is designed fo r use in S to X band U n it 4M IN . m illi m e t e r s liu c h e s i

mitsubishi microwave

Abstract: MGF1601
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1601B MICROWAVE POWER GaAs FET DESCRIPTION The M G F 1 6 0 1 B , m ed iu m -p o w er GaAs FET w ith an N channel S cho ttky g a te, is designed fo r use in S to X band am plifiers and oscillators. The herm etically sealed m etalceram ic package assures m inim um parasitic losses, and

MGF1953A

Contextual Info: October /2003 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1953A Microwave Power MES FET Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF1953A is designed for use in S to Ku band power amplifiers. The lead-less ceramic package assures minimum parasitic losses.

MGF1951A

Contextual Info: October/2003 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1951A Microwave Power MES FET Leadless Ceramic Package DESCRIPTION The MGF1951A is designed for use in S to Ku band power amplifiers. The lead-less ceramic package assures minimum parasitic losses. Outline Drawing

MGF1302

Abstract: 251C
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1302 LOW NOISE GaAs FET DESCRIPTION O UTLINE DRAWING T h e M G F 1 3 0 2 is a low-noise GaAs F E T w ith an N-channel S c h o ttky gate, which is designed fo r use in S to X band 4 M IN . U n i t : m i l l i m e t e r s inches

small signal GaAs FET

Abstract: MGF1923 IL86
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1923 TAPE CARRIER SM ALL SIGNAL GaAs FET DESCRIPTION The M G F 1 9 2 3 , low noise GaAs FET w ith an N-channel Schottky gate, is designed for use in S to Ku band ampli­ fiers. The M G F 1 9 2 3 is mounted in the super 12 tape.

MGF1951A

Abstract: MGF1951A-01 MGF1951
Contextual Info: MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1951 MGF1951A PRELIMINARY Medium Power Microwave MESFET DESCRIPTION The MGF1951A is a 20mW MESFET for S- to Ku-band driver amplifiers and oscillators. Its lead-less ceramic package assures minimum parasitics. FEATURES

ID600A

Contextual Info: < Power GaAs FET > MGF1952A Leadless ceramic package DESCRIPTION The MGF1952A power MES FET is designed for use in S to Ku band power amplifiers. The lead-less ceramic package assures minimum parasitic losses. Outline Drawing FEATURES High gain and High P1dB

gaas fet marking J

Contextual Info: < Power GaAs FET > MGF1941AL Micro-X type plastic package DESCRIPTION The MGF1941AL power MES FET is designed for use in S to Ku band power amplifiers. Outline Drawing FEATURES High gain and High P1dB P1dB=15dBm, Glp=10 dB Typ. @ f=12GHz APPLICATION Fig.1

MGF1304

Abstract: lt 6249 TL 2521
Contextual Info: MITSUBISHI {DISCRETE S O TL i F | b 2 4 c105T 0010055 M IT S U B IS H I SEM IC O N D U C T O R <GaAs FET> ~ 6 249 82 9 MITSUBISHI MGF1304A DISCRETE SC I' 91D 10025 D T-3|-25 F O R M IC R O W A V E L O W -N O IS E A M P L IF IE R S N -C H A N N E L S C H O T T K Y B A R R IE R G A T E T Y P E

MGF1102

Abstract: mgf11 dual-gate N-Channel, Dual-Gate FET
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1102 ¡ FOR LOW-NOISE AMPLIFIERS DUAL-GATE N-CHANNEL SCHOTTKY BARRIER GATE TYPE DESCRIPTION OUTLINE DRAWING The M G F 1 1 0 2 is a low noise and high gain GaAs dual­ gate FET for L to C band applications. Unit: millimeters inches

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1403B LOW NOISE GaAs FET DESCRIPTION The M G F 1 4 0 3 B low -rtoise GaAs FET w ith an N-channel S ch o ttky gate is designed fo r use in S to Ku band am pli­ fiers. The herm etically sealed m etal-ceram ic package as­

VSF 203 NF

Abstract: MGF1302
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1302 LOW NOISE GaAs FET DESCRIPTION OUTLINE DRAWING T h e M G F 1 3 0 2 is a lo w noise G aA s F E T w ith an N -ch an nel S c h o ttk y gate, w h ic h is designed fo r use in S to X band Unit: millimeters inches 4 M iN .

0619

Abstract: g720
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1423B SMALL SIGNAL GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 1 4 2 3 B , low -noise GaAs FET w ith an N -ch an nel S cho ttky gate, is designed fo r use in S to Ku band am p li­ U n it m i l l i m e t e r s i .r ic h e s t

E 212 fet

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1801B MICROWAVE POWER GaAs FET DESCRIPTION The M G F 1 8 0 1 B , medium-power GaAs FET with an Nchannel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic losses, and

MGF1302

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1302 LOW NOISE GaAs FET DESCRIPTION O UTLINE DRAWING The M G F 1302 is a low-noise GaAs FET w ith an N-channel Schottky gate, which is designed for use in S to X band U n it: m illim e te rs inches 4 M IN . 1 . 8 5 ± 0 .2

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1903B TARE CARRIER LOW NOISE GaAs FET D E S C R IP T IO N The MGF1 9 0 3 B is a low noise GaAs FET with an N-channel Schottky gate, which is designed for use in S to Ku band amplifiers. The hermetically sealed metal-ceramic package

E 212 fet

Abstract: MGF1801BT
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1801BT TAPE CARRIER MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801BT , medium-power GaAs FET with an N-channel Schottky gate , is designed for use S-X band amplifiers and oscillators. The hermetically sealed metal-ceramic package

MGF1323

Abstract: small signal GaAs FET L to Ku band amplifiers KU 745 KU 608 ku 202
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> beMTñST DD17Û3S BAT MGF1323 SMALL SIGNAL GaAs FET DESCRIPTION OUTLINE DRAWING T h e M G F 1 3 2 3 , low -noise G aA s F E T w ith U n it, m illim eters inches an N -channel 4 M IN . 1.85 ± 0 . 2 4 M IN . (0 .1 5 7 M IN .) (0 .0 7 3 + 0 .0 0 8 ) (0 .1 5 7 M \N .)

Contextual Info: MGF1102 Transistors N-Channel Dual-Gate UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V)-6.0 I(D) Max. (A)80m P(D) Max. (W)300m Maximum Operating Temp (øC)150 I(DSS) Min. (A)15m I(DSS) Max. (A)80m @V(DS) (V) (Test Condition)3.0 @Temp (øC) (Test Condition)25

MGF1404

Contextual Info: MGF1404-61-16 Transistors P-Channel UHF/Microwave MOSFET V BR DSS (V) V(BR)GSS (V)-6 I(D) Max. (A)80m P(D) Max. (W)200m Maximum Operating Temp (øC)150õ I(DSS) Min. (A)15m I(DSS) Max. (A)80m @V(DS) (V) (Test Condition)3 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.20m

Contextual Info: MGF1323 Transistors N-Channel UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V)-6.0 I(D) Max. (A)80m P(D) Max. (W)240m Maximum Operating Temp (øC)175 I(DSS) Min. (A)40m I(DSS) Max. (A)80m @V(DS) (V) (Test Condition)3.0 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.20