GAAS WAFER Search Results

GaAs wafer

Contextual Info: ED-012IRC GaAs/GaAs IrED Chips 940 nm Features : Typical Applications : • GaAs/GaAs wafer • Good spectral matched to si detector • Peripherals • Photocoupler • Photointerrupter Outline Dimensions : Unit: um 285 270 p-Electrode p-GaAs epi layer

420um

Contextual Info: ED-018IRC GaAs/GaAs IrED Chips 940 nm Features : Typical Applications : • GaAs/GaAs wafer • Good spectral matched to si detector • Peripheral Device • Photocoupler • Photointerrupter Outline Dimensions : Unit: um 435 420 p-Electrode p-GaAs epi layer

ED-014IRC

Abstract: GaAs wafer
Contextual Info: ED-014IRC GaAs/GaAs IrED Chips 940 nm Features : Typical Applications : • GaAs/GaAs wafer • Good spectral matched to si detector • Peripherals • Photocoupler • Photointerrupter Outline Dimensions : Unit: um 335 320 p-Electrode p-GaAs epi layer

ED-010IRC

Contextual Info: ED-010IRC GaAs/GaAs IrED Chips 940 nm Features : Typical Applications : • GaAs/GaAs wafer • Good spectral matched to si detector • Peripheral Device • Photocoupler • Photointerrupter Outline Dimensions : Unit: um 220 235 p-Electrode p-GaAs epi layer

Contextual Info: ED-011IRC GaAs/GaAs IrED Chips 940 nm Features : Typical Applications : • GaAs/GaAs wafer • Good spectral matched to si detector • Peripheral Device • Photocoupler • Photointerrupter Outline Dimensions : Unit: um 245 260 260 p-Electrode p-GaAs epi layer

CFA0301-A

Abstract: CF003-01 CFB0301-B CFB0301
Contextual Info: GaAs MESFET Transistor CF003-01 July 2008 - Rev 15-Jul-08 Features High Gain: 8 dB at 12 GHz P1dB Power: 22 dBm Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF003-01 GaAs-based transistor is a 600 um gate width, sub-half-micron gate length GaAs device with Silicon

CF001-01

Abstract: CFB0101 CFB0101B CFA0101A CF001 GaAs MESFET
Contextual Info: GaAs MESFET Transistor CF001-01 March 2008 - Rev 15-Mar-08 Features High Gain: Usable to 44 GHz P1dB Power: 21 dBm Wfer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF001-01 GaAs-based transistor is a 300 um gate width, sub-half-micron gate length GaAs device with Silicon

Mil-Std-883 Wire Bond Pull Method 2011

Abstract: MIL-STD-883 Method 2010 pHEMT transistor RF MESFET S parameters MESFET 0.15 phemt p-hemt TGA8310 MIL-STD-883 method 2011 GaAs 0.15 pHEMT
Contextual Info: GaAs MMIC Space Qualification GaAs MMIC Testing TriQuint Semiconductor has advanced Lot Acceptance Testing LAT for High Reliability Applications of GaAs MMICs. A flowchart depicting the entire MMIC processing flow, including the Quality Conformance Inspection

TGS 2201

Abstract: x-band limiter "Variable Capacitance Diode" X-band pin diode limiter VPIN Vertical P-I-N GaAs Diode limiters TGA2304-SCC x-band limiter diode ADS 10 diode RF limiter PIN diode
Contextual Info: VPIN Vertical P-I-N GaAs Diode Process Data Sheet Features Ti/Pt/Au, 0.6 µm • • • • • • • • • • p-GaAs, 0.25 µm Contacts i-GaAs, 1.2 µm n-GaAs, 0.75 µm Multiple P-I-N diode sizes Low on-state resistance Low off-state capacitance Device passivation

GaAs SPDT IC FET

Abstract: SW-239TR MESFET Application
Contextual Info: Key Application Features of MMIC GaAs and Pin Diode* Switches Applications Features of PIN Diode and GaAs FET Switches In SOIC type plastic packages the GaAs FET switches can handle up M /A -COM manufactures both PIN diodes and GaAs FET sem icon­ able that operate to 3 GH z as analog attenuators, digital attenuators

Contextual Info: ED-012IRA AlGaAs/GaAs IrED Chips 940 nm ! Typical Applications : ! Features : • AlGaAs/GaAs wafer • remote controller • good spectral matched to Si detector • peripheral device • photocoupler • photointerrupter ! Outline Dimensions : Unit: mil

uv phototransistor

Abstract: 8602 rectifier photodiode ge uv photodiode, GaP TSAL6200 ga09 80086 "photoconductive" 1015
Contextual Info: VISHAY Vishay Semiconductors Physics and Technology Emitters www.vishay.com 1 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. Structure of the chip is displayed in figure 1. Al p - GaAs : Si n - GaAs : Si 94 8200

a3bz

Contextual Info: SXA389BZ SXA389BZ 400MHz to 2500MHz ¼W Medium Power GaAs HBT Amplifier With Active Bias 400MHz to 2500MHz ¼W MEDIUM POWER GaAs HBT AMPLIFIER WITH ACTIVE BIAS Package: SOT-89 Product Description Features RFMD’s SXA389BZ amplifier is a high efficiency GaAs Heterojunction

a3bz

Abstract: SXA-389BZ Sirenza amplifier SOT-89 Marking 1485C trace code marking RFMD lot code RFMD SXA389BZSQ
Contextual Info: SXA389BZ SXA389BZ 400MHz to 2500MHz ¼W Medium Power GaAs HBT Amplifier With Active Bias 400MHz to 2500MHz ¼W MEDIUM POWER GaAs HBT AMPLIFIER WITH ACTIVE BIAS Package: SOT-89 Product Description Features RFMD’s SXA389BZ amplifier is a high efficiency GaAs Heterojunction

ED-014IRA

Abstract: GaAs wafer ED-014
Contextual Info: ED-014IRA AlGaAs/GaAs IrED Chips 940 nm ! Typical Applications : ! Features : • AlGaAs/GaAs wafer • remote controller • good spectral matched to Si detector • peripherals • high power • photocoupler • low forward voltage • photointerrupter

ED-011IRA

Contextual Info: ED-011IRA AlGaAs/GaAs IrED Chips 940 nm Features : Typical Applications : • AlGaAs/GaAs wafer • Good spectral matched to Si detector • Remote Controller • Peripheral Device • Photocoupler • Photointerrupter Outline Dimensions : Unit: um 260 260

SHF-0289Z

Abstract: SHF0289Z GaAS fet sot89 SHF0289ZSQ
Contextual Info: SHF0289Z SHF0289Z 0.05GHz to 6GHz, 1.0Watt GaAs HFET 0.05GHz to 6GHz, 1.0WATT GaAs HFET Package: SOT-89 Product Description Features RFMD’s SHF0289Z is a high performance AIGaAs/GaAs Heterostructure FET HFET housed in a low-cost surface-mount plastic package. The HFET technology improves

BPW-20R

Abstract: BPW20 large area quadrant photodiode BPV10NF BPV22NF BPW20R BPW34 BPW46 BPW97 S153P
Contextual Info: Vishay Telefunken Physics and Technology Emitters Materials vt vt 12.99 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 5. p - GaAs : Si Al n - GaAs : Si 94 8200

Contextual Info: ED-016IRA AlGaAs/GaAs IrED Chips 940 nm Features : Typical Applications : • AlGaAs/GaAs wafer • Good spectral matched to si detector • High power • Low forward voltage • Remote Controller • Pperipheral Device • Photocoupler • Photointerrupter

uv phototransistor

Abstract: solar cell transistor infrared monocrystalline solar cell telefunken Dielectric Constant Silicon Nitride power density for monocrystalline solar cell External Quantum Efficiency solar 10MW BPW21R short distance measurement ir infrared diode Telefunken Phototransistor
Contextual Info: Vishay Telefunken Physics and Technology Emitters Materials vt vt 05.00 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 1. p - GaAs : Si Al n - GaAs : Si 94 8200

GaAs wafer

Contextual Info: ED-018IRA AlGaAs/GaAs IrED Chips 940 nm ! Typical Applications : ! Features : • AlGaAs/GaAs wafer • remote controller • good spectral matched to Si detector • peripheral device • high power • photocoupler • low forward voltage • photointerrupter

TSAL6200

Abstract: pn junction diode structure phototransistor K-T TSAL6200 application circuit
Contextual Info: Vishay Semiconductors Physics and Technology Emitters Materials Document Number 80086 02-02 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 5. p - GaAs : Si Al n - GaAs : Si

ED-010IRA

Contextual Info: ED-010IRA AlGaAs/GaAs IrED Chips 940 nm Features : Typical Applications : • AlGaAs/GaAs wafer • Good spectral matched to Si detector • High power • Remote Controller • Peripheral Device • Photocoupler • Photointerrupter Outline Dimensions : Unit: um

IR 638

Contextual Info: ED-010HRP AlGaAs/GaAs LED Chips Red Features : Typical Applications : • AlGaAs/GaAs epi wafer • Double heterojunction structure • Lamp • Display Outline Dimensions : Unit:um 235 220 n-Electrode 120 235 n-Electrode n-AlGaAs epi layer AlGaAs active layer