GAIN Search Results

Contextual Info: TLE2037, TLE2037A EXCALIBUR LOW -NOISE HIGH-SPEED PRECISION DECOM PENSATED OPERATIONAL AM PLIFIERS D3454, MAY 1990 - REVISED APRIL 1991 available features Outstanding Combination of DC Precision and AC Performance: Gain-Bandwldth Product. . . 80 MHz Typ V

UM5583

Abstract: UM55 SPKP rs 355 integrated circuits 5583H
Contextual Info: UMC UM5583 3 Sec Recording / Playback 1C Features • "BEEP" sound indicates to start recording and memory full for manual playback ■ Built-In AGC Automatic Gain Control to enlarge input dynamic range ■ Built-in low pass filter ■ Built-in microphone amplifier

2SD1294

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SD1294 POWER REGULATOR FOR LINE OPERATED TV. Unit in mm # 3 .2 ± Q 2 FEATURES : . Excellent Wide Safe Operating Area (80 W.s z at Tc=25°C) . eo . Included Abalanche Diode : Vz=60±15V . High DC Current Gain

Contextual Info: Texas Instruments TGA8300 Monolithic 2- to 18-GHz Amplifier Features • ■ ■ ■ ■ 18-dBm typical output power at 1-dB gain compression 6.5-dB gain Input and output SWR less than 2:1 Size: 0.093 x 0.064 x 0.006 inch Recessed V ^ m gate structure Description

Contextual Info: SILICON NPN EPITAXIAL TY P E 2SC3420 STROBO FLASH APPLICATIONS. Unit in nun MEDIMUM POWER AMPLIFIER APPLICATIONS. Ì.3MAX. FEATURES: . High DC Current Gain : hpE=140~600 Vc e =2V, Ic =0.5A bFE=70(Min.) (Vqj;=2V, Ic =4A) . Low Saturation Voltage : vCE(sat)=l •0(Max.) (Ic =4A, Ib =0.1A)

Contextual Info: TLE2024, TLE2024A, TLE2024B, TLE2024Y EXCALIBUR HIGH-SPEED LOW-POWER PRECISION QUAD OPERATIONAL AMPLIFIERS D 3 2 6 5 , M A Y 1 9 8 9 - R E V IS E D O C T O B E R 1991 available features Supply Current . . . 1 mA Max High Open-Loop Gain . . . 7 V/jiV 137 dB Typ

TRANSISTOR Marking XB PNP

Abstract: YTS3906
Contextual Info: TOSHIBA TRANSISTOR YTS3906 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : IcEV“” 50nA(Max.), IuEV“ 50nA(Max.) 0 VCE— 30V, VBE-3V . Excellent DC Current Gain Linearity

Contextual Info: TO SHIBA 2SD2079 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2079 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. 10 ±0.3 High DC Current Gain : hpE (i) = 2000 (Min.) Low Saturation Voltage : V q e (sat) ( 1 ) = 1-5V (Max.)

Contextual Info: TOSHIBA 2SC3265 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3265 Unit in mm LOW FREQUENCY POWER AMPLIFER APPLICATIONS POWER SWITCHING APPLICATIONS h0.5 High DC Current Gain : hpg (i) = 100~320 Low Saturation Voltage : VcE(sat) = 0.4 V (Max.)

TIM1414-4LA-371

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA TIM1414-4LA-371 RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at ldB Compression Point Linear Gain SYMBOL PldB Drain Current Power Added Efficiency 3rd Order Intermodulation

MG50G2CL3

Abstract: Mg50G2cl mg50g2
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG50G2CL3 HIGH POWER SWITCHING APPLICATIONS. Unit in ram MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector Is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-In to 1 Package. . High DC Current Gain: hFE=100 Min. (Ic=50A)

2SB907

Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS -2SB907 U nit in mm SW ITCH IN G APPLICATIONS. H A M M E R DRIVE, PULSE M O T O R DRIVE APPLICATIONS. PO W ER AM PLIFIER APPLICATIONS. High DC Current Gain : hFE(l) =2000 (Min.) (Vc e = - 2V, I c = - 1 A ) Low Saturation Voltage

MG15G1AL3

Abstract: MG15G1AL3 equivalent mg15g1 mg15g MG15G1AL
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG15G1AL3 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-In Free Wheeling Diode. . High DC Current Gain : hFE=100 Min. (Ic=15A)

Contextual Info: HN3C17FU TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C17FU Unit in mm V H F -U H F LOW NOISE AMPLIFIER APPLICATIONS 2-1 + 0.1 CHIP : fT = 16GHz series • Low Noise Figure : N F=1.3dB (f=2GHz) • High Gain : |S2l e|2 = 9-0dB (f=2GHz)

MG400H1FK1

Abstract: LF400A
Contextual Info: MG400H1FK1 G TR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode . High DC Current Gain : h]?E=200 Min. . Low Saturation Voltage

POUT315

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-16SL-081 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES • ■ LOW INTERMODULATION DISTORTION HIGH GAIN IM3=-45dBc a t Po=31.5dBm GldB=8.0dB at 5.9GHz to 6.4GHz Single C arrier Level BROAD BAND INTERNALLY MATCHED

TIM0910-20

Contextual Info: TIM0910-20 FE A TU R E S : • HIGH POWER ■ BROAD BAND INTERNALLY MATCHED ■ HERMETICALLY SEALED PACKAGE P 1dB = 43.0 dBm at 9.5 GHz to 10.5GHz ■ HIGH GAIN GldB B 7 0 dB at 9 5 GHz * 10 5 GHz RF PERFORMANCE SPECIFICATIONS Ta = 25°C CHARACTERISTIC

MG75M2CK1

Abstract: tkp7
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG75M2CK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built Into 1 Package. . High DC Current Gain

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-4 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 7.1 GHz to 7.9 GHz • High gain - G 1dB = 6.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally m atched • H erm etically sealed package

TGF1350

Contextual Info: Texas Instruments TGF1350 Low-Noise Microwave GaAs FET Features • 1.5-dB noise figure with 11 -dB associated gain at 10 GHz ■ 2.2-dB noise figure with 7-dB associated gain at 18 GHz ■ All-gold metallization ■ Recessed 1/2-^m gate structure ■ Si3N4 channel passivation

MG150H2CL1

Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG150H2CL1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FAST—ON—TAB #110 MS w.s±a5 FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diodes. . High DC Current Gain : hpjr=80 Min. (Ic=150A)

Contextual Info: Texas Instruments Microwave Military Components TGM8014 Carrier Plate Assembly Product Features • 0.6-watt average output power at 1-dB gain compression ■ 6 to 18 GHz bandwidth ■ Automated assembly ■ Selectable gate biasing ■ 100% RF screening Product Description

S-AU25

Abstract: SAU25
Contextual Info: i TOSHIBA RF POWER AMPLIFIER MODULE - S-AU25 900MHz UHF POWER AMPLIFIER MODULE EUROPE CELLULAR RADIO FEATURES : Unit in mm . Built-in Driver Stage 2-R2.1±a2 . Output Power (6W) is Directly Gained by VCO(lmW). %

Contextual Info: TO SHIBA 2SC4394 Transistor Silicon NPN Epitaxial Planar Type VHF ~ UHF Band Low Noise Amplifier Applications F e a tu re s • L o w N oise Figure, H igh Gain • N F = 1.1 d B , IS21el2 = 11 dB f= 1GHz A b s o lu te M a x im u m R a tin g s (Ta = 2 5 C )