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    GALV Price and Stock

    TDK Corporation CGA-LV01-E6-KIT

    GGA AUTOMOTIVE LOW VOLTAGE MLCC
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    DigiKey CGA-LV01-E6-KIT 4 1
    • 1 $52.7
    • 10 $45.744
    • 100 $45.744
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    Festo VZQA-C-M22U-6-GG-ALV4N-4

    PINCH VALVE
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    DigiKey VZQA-C-M22U-6-GG-ALV4N-4 Bulk 1
    • 1 $212.75
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    Festo VZQA-C-M22U-15-GG-ALV4N-4

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    DigiKey VZQA-C-M22U-15-GG-ALV4N-4 Bulk 1
    • 1 $277.51
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    Omega Engineering SCE-24P20GALV

    NEMA 4X 304SS SLOPE TOP WASHDOWN ENCLOSURES, CHEMICAL RESISTANT WALL MOUNT ELECTRICAL ENCLOSURES, SIZES 16X12 TO 60X36 - Bulk (Alt: SCE-24P20GALV)
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    Avnet Americas SCE-24P20GALV Bulk 1
    • 1 $118.1996
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    Newark SCE-24P20GALV Bulk 3 1
    • 1 $118.2
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    • 100 $118.2
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    Omega Engineering SCE-36P24GALV

    NEMA 4X 304SS SLOPE TOP WASHDOWN ENCLOSURES, CHEMICAL RESISTANT WALL MOUNT ELECTRICAL ENCLOSURES, SIZES 16X12 TO 60X36 - Bulk (Alt: SCE-36P24GALV)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SCE-36P24GALV Bulk 2 Weeks 1
    • 1 $214.4902
    • 10 $214.4902
    • 100 $214.4902
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    Newark SCE-36P24GALV Bulk 1
    • 1 $214.49
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    Find more GALV price and stock on Findchips.com

    GALV Datasheets (58)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GVT71128B18 Galvantech 128K x 18 SYNCHRONOUS BURST SRAM Original PDF
    GVT71128B32 Galvantech 128K x 32 SYNCHRONOUS BURST SRAM Original PDF
    GVT71128B36 Galvantech 128K x 36 SYNCHRONOUS BURST SRAM Original PDF
    GVT71128D18 Galvantech 128K x 18 SYNCHRONOUS BURST SRAM Original PDF
    GVT71128D32 Galvantech 128K x 32 SYNCHRONOUS BURST SRAM Original PDF
    GVT71128D32T-5T Galvan Tech IC SRAM 4MBIT 100MHZ Original PDF
    GVT71128D32T-7T Galvan Tech IC SRAM 4MBIT 66MHZ Original PDF
    GVT71128DA36 Galvantech 128K x 36/256K x 18 SYNCHRONOUS SRAM Original PDF
    GVT71128E36 Galvantech 128K x 36 SYNCHRONOUS BURST SRAM Original PDF
    GVT71128E36T-9T Galvan Tech IC SRAM 4MBIT 90MHZ Original PDF
    GVT71128G36 Galvantech 128K x 36 SYNCHRONOUS BURST SRAM Original PDF
    GVT71128ZB36 Galvantech 128K x 36 FLOW-THROUGH ZBL SRAM Original PDF
    GVT71128ZC36 Galvantech 128K x 36 PIPELINED ZBL SRAM Original PDF
    GVT71256B18 Galvantech 256K x 18 SYNCHRONOUS BURST SRAM Original PDF
    GVT71256B36 Galvantech 256K x 36/512K x 18 SYNCHRONOUS SRAM Original PDF
    GVT71256C36 Galvantech 256K x 36/512K x 18 SYNCHRONOUS SRAM Original PDF
    GVT71256D18 Galvantech 256K x 18 SYNCHRONOUS BURST SRAM Original PDF
    GVT71256D36 Galvantech 256K x 36/512K x 18 SYNCHRONOUS SRAM Original PDF
    GVT71256DA18 Galvantech 128K x 36/256K x 18 SYNCHRONOUS SRAM Original PDF
    GVT71256E18 Galvantech 256K x 18 SYNCHRONOUS BURST SRAM Original PDF

    GALV Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Technologies GmbH & Co KG Closed Loop Hall Current Sensor CYHCS-P This Hall Effect current sensor is based on the closed loop compensating principle and designed with a high galvanic isolation between primary and secondary circuits. It can be used for measurement of DC and AC current, pulse currents etc. The output of the transducer reflects the


    Original     		PDF --15V D-85464

    Untitled

    Abstract: No abstract text available
    Text: Technologies GmbH & Co KG Closed Loop Hall Current Sensor CYHCS-D4C This Hall Effect current sensor is based on closed loop compensating principle and designed with a high galvanic isolation between primary and secondary circuits. It can be used for measurement of DC and AC current, pulse currents etc. The output of the transducer reflects


    Original     		PDF D-85464

    ADM2484E

    Abstract: SD103C ADP3330
    Text: 500 kbps, ESD Protected, Half-/Full-Duplex, iCoupler, Isolated RS-485 Transceiver ADM2484E FEATURES FUNCTIONAL BLOCK DIAGRAM VDD2 VDD1 ADM2484E DE GALVANIC ISOLATION TxD Y Z A RxD B RE GND1 GND2 06984-001 Isolated, RS-485/RS-422 transceiver, configurable as half- or


    Original     		PDF RS-485 ADM2484E RS-485/RS-422 RS-485-A-1998 UL1577 03-27-2007-B 16-Lead RW-16) ADM2484E SD103C ADP3330

    lem current lt 100

    Abstract: LEM Components
    Text: Current Transducer LT 4000-T IPN = 4000 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP RM Primary nominal r.m.s. current


    Original     		PDF 4000-T lem current lt 100 LEM Components

    current SENSOR

    Abstract: "Current Sensor" CS1000EK waveform of hall effect sensor CS400EK hall effect sensor for current measurement CS200EK
    Text: CS1000EK Dismountable Hall-Effect Current Sensor Series Product Information Introduction:CS1000EK Series is a new generation of open -loop current sensor based on the principle of Hall effect. It is applicable for the measuring of DC, AC, pulse and complex waveform current with galvanic


    Original     		PDF CS1000EK CS200EKCS400EKCS600EKCS800EKS1000EK 004006008001000A 5KV/50Hz/1min current SENSOR "Current Sensor" waveform of hall effect sensor CS400EK hall effect sensor for current measurement CS200EK

    sot 23-5 marking code

    Abstract: CMWSH-4
    Text: Central CMWSH-4 TM Semiconductor Corp. SURFACE MOUNT SUPERminiTM DUAL ISOLATED SILICON SCHOTTKY DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMWSH-4, 40V, Low VF, consists of two galvanically isolated SUPERminiTM Silicon Schottky diodes. The CMWSH-4 has been designed for use in


    Original     		PDF OT-343 100mA 14-November sot 23-5 marking code CMWSH-4

    Untitled

    Abstract: No abstract text available
    Text: Industrial DC/DC CONVERTER MGDI-100 Wide Input : 100W POWER Industrial Grade 4:1 & 5:1 Wide Input Single Output Metallic Case - 1 500 VDC Isolation • Wide input range • Nominal power up to 100 W • High efficiency typ. 88% • Soft start • Galvanic isolation 1.500 VDC according to EN 60950


    Original     		PDF MGDI-100 FC06-054

    Untitled

    Abstract: No abstract text available
    Text: Industrial DC/DC CONVERTER MGDI-26 Wide Input : 25W POWER Industrial Grade 4:1 Wide Input Single Output Metallic Case - 1.500 VDC Isolation • Wide input range • Nominal power of 25 W • Wide temperature range : -40°C/+95°C case • Soft start • Galvanic isolation 1.500 VDC according to EN60950


    Original     		PDF MGDI-26 EN60950 FC99-044

    Untitled

    Abstract: No abstract text available
    Text: Industrial DC/DC CONVERTER MGDI-100 Wide Input : 100W POWER Industrial Grade 5:1 Wide Input Single Output Metallic Case - 1.500 VDC Isolation • Wide input range • Nominal power up to 100 W • High efficiency typ. 88% • Soft start • Galvanic isolation 1.500 VDC according to EN 60950


    Original     		PDF MGDI-100 FC06-054

    In 0 K63

    Abstract: sot 363 marking tm CMKD6263 marking MA sot-363 MARKING d3 sot363
    Text: Central CMKD6263 SURFACE MOUNT ULTRAmini TRIPLE ISOLATED HIGH VOLTAGE SILICON SCHOTTKY DIODES TM TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKD6263 contains three 3 galvanically isolated, high voltage Silicon Schottky diodes, epoxy molded in a SOT-363 surface


    Original     		PDF CMKD6263 CMKD6263 OT-363 21-November In 0 K63 sot 363 marking tm marking MA sot-363 MARKING d3 sot363

    Untitled

    Abstract: No abstract text available
    Text: Pulse Transformers IT series Pulse Transformer with Double Secondary Winding Galvanic separation of drive and power circuit Approvals Voltage resistance up to 4kV Ignition current up to 1A Turns ratio up to 3:1:1 Technical specifications Flammability corresponding to:


    Original     		PDF lin76185

    MT29C4G96MAZBACJG-5 IT

    Abstract: No abstract text available
    Text: Pulse Transformer with Double Secondary Winding Pulse Transformers IT series Galvanic separation of drive and power circuit Voltage resistance up to 4kV Approvals Ignition current up to 1A Turns ratio up to 3:1:1 Features and benefits Galvanic separation with secondary winding.


    Original     		PDF

    sot23 s1a marking

    Abstract: marking code S1A sot23
    Text: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906


    Original     		PDF SMBT3904. MMBT3904 SMBT3904S: SMBT3906. MMBT3906 SMBT3904/MMBT3904 SMBT3904S OT363 sot23 s1a marking marking code S1A sot23

    scr firing

    Abstract: EIA-422-B EIA-485-A scr firing circuit EIA-485 rs485 scr 5w EIA-485-A termination rs485 termination GSCB6-CT002
    Text: Green Power Solutions srl Via Greto di Cornigliano 6R - 16152 Genova , Italy Phone: +39-010-659 1869 Fax: +39-010-659 1870 Web: www.gpsemi.it E-mail: info@gpsemi.it GSCB6-C RS485 & CANBUS communication interface board. Full galvanic insulation Protection against communication channel shorts


    Original     		PDF RS485 RS422/RS485 TIA/EIA-422-B TIA/EIA-485-A. GSCB6-CT002 scr firing EIA-422-B EIA-485-A scr firing circuit EIA-485 rs485 scr 5w EIA-485-A termination rs485 termination GSCB6-CT002

    GVT71256T18

    Abstract: DQ974
    Text: ADVANCE INFORMATION GALVANTECH, INC. SYNCHRONOUS CACHE TAG SRAM PIPELINED OUTPUT GVT71256T18 256K X 18 SYNCHRONOUS TAG SRAM 256K x 18 SRAM +3.3V SUPPLY WITH CLOCKED REGISTERED INPUTS FEATURES GENERAL DESCRIPTION • • • • • • The Galvantech Synchronous Burst SRAM family


    Original     		PDF GVT71256T18 71256T18 access/10ns GVT71256T18 DQ974

    MARKING CODE CCB

    Abstract: BC847S
    Text: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see


    Original     		PDF BC846S/ BC846U/ BC847S BC846S BC847S: BC846U EHA07178 MARKING CODE CCB BC847S

    CE1X

    Abstract: fast sram 100mhz CE2Y GALVANTECH
    Text: ADVANCE INFORMATION GALVANTECH, INC. DUAL I/O DUAL ADDRESS SYNCHRONOUS SRAM GVT81256P36/GVT81128P36 256K/128K X 36 PIPELINED SRAM 256K/128K X 36 SRAM +3.3V SUPPLY, FULLY REGISTERED TWO BI-DIRECTIONAL DATA BUSES FEATURES GENERAL DESCRIPTION • • • •


    Original     		PDF GVT81256P36/GVT81128P36 256K/128K GVT81256P36/GVT81128P36 144x36/131 072x36 81256P36 CE1X fast sram 100mhz CE2Y GALVANTECH

    VIE150-12S4

    Abstract: VIE150-12S fin heat sink igbt IC100
    Text: ISOSMART IGBT Module VIE150-12S4 IC = 150 A = 1200 V VCES Intelligent Power Module IPM with integrated galvanic isolation interface High Short Circuit SOA Capability 3 3 4 5 6 7 8 9 10 Preliminary data 2 Driver 1 1 Protection Isolation 2 Symbol Test Conditions


    Original     		PDF VIE150-12S4 IC100 VIE150-12S4 VIE150-12S fin heat sink igbt IC100

    MARKING CODE Zi sot363

    Abstract: WRS SOT363 Marking Code ZI ZI Marking Code transistor sot-363 marking ZI 198S Transistor WRS
    Text: SIEMENS BCR 198S PNP Silicon Digital Transistor Array >Switching circuit, inverter, interface circuit, driver circuit •Two galvanic internal isolated Transistors in one package ■Built in bias resistor (R1=47k£i, R2=47kQ) Type Marking Ordering Code Pin Configuration


    OCR Scan     		PDF Q62702-C2419 OT-363 27llector-base MARKING CODE Zi sot363 WRS SOT363 Marking Code ZI ZI Marking Code transistor sot-363 marking ZI 198S Transistor WRS

    5b1 transistor

    Abstract: transistor 5b1 transistor bc qe TRANSISTOR MARKING TE SOT363 Marking 1cs sot marking 1cs FR1E marking code YA Transistor 6c2 transistor
    Text: SIEMENS BC 847S NPN Silicon AF Transistor Array • For AF input stages and driver applications 4 • High current gain 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package 2 1 Type


    OCR Scan     		PDF Q62702-C2372 OT-363 Mav-12-1998 BC847S av-12-1998 5b1 transistor transistor 5b1 transistor bc qe TRANSISTOR MARKING TE SOT363 Marking 1cs sot marking 1cs FR1E marking code YA Transistor 6c2 transistor

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BC 846S NPN Silicon AF Transistor Array For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two galvanic internal isolated Transistors with high matching in one package 11 az t.£. FI iïl R Lü


    OCR Scan     		PDF Q62702-C2529 OT-363

    SIEMENS sr 460

    Abstract: No abstract text available
    Text: SIEMENS GaAIAs-IR-Lumineszenzdiode GaAIAs Infrared Emitter SFH 460 Preliminary Data Wesentliche Merkmale Features • Strahlung im sichtbaren Rotbereich ohne IR-Anteil • Kathode galvanisch mit dem Gehäuse­ boden verbunden • Sehr hoher Wirkungsgrad • Hohe Zuverlässigkeit


    OCR Scan     		PDF 450k/W SIEMENS sr 460

    846PN

    Abstract: VQE 11E
    Text: SIEMENS BC 846PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation


    OCR Scan     		PDF 846PN EHA07193 846PN Q62702-C2537 OT-363 VQE 11E

    Untitled

    Abstract: No abstract text available
    Text: X F r TT r 2 2 3 .3 4 02963303 5 fixed al galv yes nr no Scho ettgu l packing pieces L work piece edges D IN 1 5 0 1 3 7 1 5 CD ISO 2768 mH 1/1 date generote #& n 020505 design dimensions ISO 2768 - in - 0 ,5 - 3 ± 0.1 3,0-6 i 0,1 6,-30 i 0,2 scale part surface


    OCR Scan     		PDF M-200