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TDK Corporation CGA-LV01-E6-KIT GGA AUTOMOTIVE LOW VOLTAGE MLCC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CGA-LV01-E6-KIT		3		1	1 $52.7 10 $45.744 100 $45.744 1000 $45.744 10000 $45.744	Buy Now
Omega Engineering SCE-36P30GALV GALVANIZED SUB-PANEL FOR 36 " X
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SCE-36P30GALV	Bulk			1	1 $291.89 10 $291.89 100 $291.89 1000 $291.89 10000 $291.89	Buy Now
Avnet Americas	SCE-36P30GALV	Bulk		2 Weeks	1	1 $299.8917 10 $299.8917 100 $299.8917 1000 $299.8917 10000 $299.8917	Buy Now
Newark	SCE-36P30GALV	Bulk			1	1 $299.89 10 $299.89 100 $299.89 1000 $299.89 10000 $299.89	Buy Now
Omega Engineering SCE-30P24GALV GALVANIZED SUB-PANEL FOR 30 " X
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SCE-30P24GALV	Bulk			1	1 $183.78 10 $183.78 100 $183.78 1000 $183.78 10000 $183.78	Buy Now
Avnet Americas	SCE-30P24GALV	Bulk		2 Weeks	1	1 $178.3567 10 $178.3567 100 $178.3567 1000 $178.3567 10000 $178.3567	Buy Now
Festo VZQA-C-M22U-6-GG-ALV4N-4 PINCH VALVE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	VZQA-C-M22U-6-GG-ALV4N-4	Bulk			1	1 $212.75 10 $212.75 100 $212.75 1000 $212.75 10000 $212.75	Buy Now
Festo VZQA-C-M22U-15-GG-ALV4N-4 PINCH VALVE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	VZQA-C-M22U-15-GG-ALV4N-4	Bulk			1	1 $277.51 10 $277.51 100 $277.51 1000 $277.51 10000 $277.51	Buy Now

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GALV Datasheets (58)

Part	Manufacturer	Description	Datasheet Type	PDF
GVT71128B18	Galvantech	128K x 18 SYNCHRONOUS BURST SRAM	Original	PDF
GVT71128B32	Galvantech	128K x 32 SYNCHRONOUS BURST SRAM	Original	PDF
GVT71128B36	Galvantech	128K x 36 SYNCHRONOUS BURST SRAM	Original	PDF
GVT71128D18	Galvantech	128K x 18 SYNCHRONOUS BURST SRAM	Original	PDF
GVT71128D32	Galvantech	128K x 32 SYNCHRONOUS BURST SRAM	Original	PDF
GVT71128D32T-5T	Galvan Tech	IC SRAM 4MBIT 100MHZ	Original	PDF
GVT71128D32T-7T	Galvan Tech	IC SRAM 4MBIT 66MHZ	Original	PDF
GVT71128DA36	Galvantech	128K x 36/256K x 18 SYNCHRONOUS SRAM	Original	PDF
GVT71128E36	Galvantech	128K x 36 SYNCHRONOUS BURST SRAM	Original	PDF
GVT71128E36T-9T	Galvan Tech	IC SRAM 4MBIT 90MHZ	Original	PDF
GVT71128G36	Galvantech	128K x 36 SYNCHRONOUS BURST SRAM	Original	PDF
GVT71128ZB36	Galvantech	128K x 36 FLOW-THROUGH ZBL SRAM	Original	PDF
GVT71128ZC36	Galvantech	128K x 36 PIPELINED ZBL SRAM	Original	PDF
GVT71256B18	Galvantech	256K x 18 SYNCHRONOUS BURST SRAM	Original	PDF

GVT71256B36	Galvantech	256K x 36/512K x 18 SYNCHRONOUS SRAM	Original	PDF
GVT71256C36	Galvantech	256K x 36/512K x 18 SYNCHRONOUS SRAM	Original	PDF
GVT71256D18	Galvantech	256K x 18 SYNCHRONOUS BURST SRAM	Original	PDF
GVT71256D36	Galvantech	256K x 36/512K x 18 SYNCHRONOUS SRAM	Original	PDF
GVT71256DA18	Galvantech	128K x 36/256K x 18 SYNCHRONOUS SRAM	Original	PDF
GVT71256E18	Galvantech	256K x 18 SYNCHRONOUS BURST SRAM	Original	PDF

GALV Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Technologies GmbH & Co KG Closed Loop Hall Current Sensor CYHCS-P This Hall Effect current sensor is based on the closed loop compensating principle and designed with a high galvanic isolation between primary and secondary circuits. It can be used for measurement of DC and AC current, pulse currents etc. The output of the transducer reflects the	Original	PDF	--15V D-85464
Untitled Abstract: No abstract text available Text: Technologies GmbH & Co KG Closed Loop Hall Current Sensor CYHCS-D4C This Hall Effect current sensor is based on closed loop compensating principle and designed with a high galvanic isolation between primary and secondary circuits. It can be used for measurement of DC and AC current, pulse currents etc. The output of the transducer reflects	Original	PDF	D-85464
ADM2484E Abstract: SD103C ADP3330 Text: 500 kbps, ESD Protected, Half-/Full-Duplex, iCoupler, Isolated RS-485 Transceiver ADM2484E FEATURES FUNCTIONAL BLOCK DIAGRAM VDD2 VDD1 ADM2484E DE GALVANIC ISOLATION TxD Y Z A RxD B RE GND1 GND2 06984-001 Isolated, RS-485/RS-422 transceiver, configurable as half- or	Original	PDF	RS-485 ADM2484E RS-485/RS-422 RS-485-A-1998 UL1577 03-27-2007-B 16-Lead RW-16) ADM2484E SD103C ADP3330
lem current lt 100 Abstract: LEM Components Text: Current Transducer LT 4000-T IPN = 4000 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP RM Primary nominal r.m.s. current	Original	PDF	4000-T lem current lt 100 LEM Components
current SENSOR Abstract: "Current Sensor" CS1000EK waveform of hall effect sensor CS400EK hall effect sensor for current measurement CS200EK Text: CS1000EK Dismountable Hall-Effect Current Sensor Series Product Information Introduction:CS1000EK Series is a new generation of open -loop current sensor based on the principle of Hall effect. It is applicable for the measuring of DC, AC, pulse and complex waveform current with galvanic	Original	PDF	CS1000EK CS200EKCS400EKCS600EKCS800EKS1000EK 004006008001000A 5KV/50Hz/1min current SENSOR "Current Sensor" waveform of hall effect sensor CS400EK hall effect sensor for current measurement CS200EK
sot 23-5 marking code Abstract: CMWSH-4 Text: Central CMWSH-4 TM Semiconductor Corp. SURFACE MOUNT SUPERminiTM DUAL ISOLATED SILICON SCHOTTKY DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMWSH-4, 40V, Low VF, consists of two galvanically isolated SUPERminiTM Silicon Schottky diodes. The CMWSH-4 has been designed for use in	Original	PDF	OT-343 100mA 14-November sot 23-5 marking code CMWSH-4
Untitled Abstract: No abstract text available Text: Industrial DC/DC CONVERTER MGDI-100 Wide Input : 100W POWER Industrial Grade 4:1 & 5:1 Wide Input Single Output Metallic Case - 1 500 VDC Isolation • Wide input range • Nominal power up to 100 W • High efficiency typ. 88% • Soft start • Galvanic isolation 1.500 VDC according to EN 60950	Original	PDF	MGDI-100 FC06-054
Untitled Abstract: No abstract text available Text: Industrial DC/DC CONVERTER MGDI-26 Wide Input : 25W POWER Industrial Grade 4:1 Wide Input Single Output Metallic Case - 1.500 VDC Isolation • Wide input range • Nominal power of 25 W • Wide temperature range : -40°C/+95°C case • Soft start • Galvanic isolation 1.500 VDC according to EN60950	Original	PDF	MGDI-26 EN60950 FC99-044
Untitled Abstract: No abstract text available Text: Industrial DC/DC CONVERTER MGDI-100 Wide Input : 100W POWER Industrial Grade 5:1 Wide Input Single Output Metallic Case - 1.500 VDC Isolation • Wide input range • Nominal power up to 100 W • High efficiency typ. 88% • Soft start • Galvanic isolation 1.500 VDC according to EN 60950	Original	PDF	MGDI-100 FC06-054
In 0 K63 Abstract: sot 363 marking tm CMKD6263 marking MA sot-363 MARKING d3 sot363 Text: Central CMKD6263 SURFACE MOUNT ULTRAmini TRIPLE ISOLATED HIGH VOLTAGE SILICON SCHOTTKY DIODES TM TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKD6263 contains three 3 galvanically isolated, high voltage Silicon Schottky diodes, epoxy molded in a SOT-363 surface	Original	PDF	CMKD6263 CMKD6263 OT-363 21-November In 0 K63 sot 363 marking tm marking MA sot-363 MARKING d3 sot363
Untitled Abstract: No abstract text available Text: Pulse Transformers IT series Pulse Transformer with Double Secondary Winding Galvanic separation of drive and power circuit Approvals Voltage resistance up to 4kV Ignition current up to 1A Turns ratio up to 3:1:1 Technical specifications Flammability corresponding to:	Original	PDF	lin76185
MT29C4G96MAZBACJG-5 IT Abstract: No abstract text available Text: Pulse Transformer with Double Secondary Winding Pulse Transformers IT series Galvanic separation of drive and power circuit Voltage resistance up to 4kV Approvals Ignition current up to 1A Turns ratio up to 3:1:1 Features and benefits Galvanic separation with secondary winding.	Original	PDF
sot23 s1a marking Abstract: marking code S1A sot23 Text: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906	Original	PDF	SMBT3904. MMBT3904 SMBT3904S: SMBT3906. MMBT3906 SMBT3904/MMBT3904 SMBT3904S OT363 sot23 s1a marking marking code S1A sot23
scr firing Abstract: EIA-422-B EIA-485-A scr firing circuit EIA-485 rs485 scr 5w EIA-485-A termination rs485 termination GSCB6-CT002 Text: Green Power Solutions srl Via Greto di Cornigliano 6R - 16152 Genova , Italy Phone: +39-010-659 1869 Fax: +39-010-659 1870 Web: www.gpsemi.it E-mail: info@gpsemi.it GSCB6-C RS485 & CANBUS communication interface board. Full galvanic insulation Protection against communication channel shorts	Original	PDF	RS485 RS422/RS485 TIA/EIA-422-B TIA/EIA-485-A. GSCB6-CT002 scr firing EIA-422-B EIA-485-A scr firing circuit EIA-485 rs485 scr 5w EIA-485-A termination rs485 termination GSCB6-CT002

GVT71256T18 Abstract: DQ974 Text: ADVANCE INFORMATION GALVANTECH, INC. SYNCHRONOUS CACHE TAG SRAM PIPELINED OUTPUT GVT71256T18 256K X 18 SYNCHRONOUS TAG SRAM 256K x 18 SRAM +3.3V SUPPLY WITH CLOCKED REGISTERED INPUTS FEATURES GENERAL DESCRIPTION • • • • • • The Galvantech Synchronous Burst SRAM family	Original	PDF	GVT71256T18 71256T18 access/10ns GVT71256T18 DQ974
MARKING CODE CCB Abstract: BC847S Text: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see	Original	PDF	BC846S/ BC846U/ BC847S BC846S BC847S: BC846U EHA07178 MARKING CODE CCB BC847S
CE1X Abstract: fast sram 100mhz CE2Y GALVANTECH Text: ADVANCE INFORMATION GALVANTECH, INC. DUAL I/O DUAL ADDRESS SYNCHRONOUS SRAM GVT81256P36/GVT81128P36 256K/128K X 36 PIPELINED SRAM 256K/128K X 36 SRAM +3.3V SUPPLY, FULLY REGISTERED TWO BI-DIRECTIONAL DATA BUSES FEATURES GENERAL DESCRIPTION • • • •	Original	PDF	GVT81256P36/GVT81128P36 256K/128K GVT81256P36/GVT81128P36 144x36/131 072x36 81256P36 CE1X fast sram 100mhz CE2Y GALVANTECH
VIE150-12S4 Abstract: VIE150-12S fin heat sink igbt IC100 Text: ISOSMART IGBT Module VIE150-12S4 IC = 150 A = 1200 V VCES Intelligent Power Module IPM with integrated galvanic isolation interface High Short Circuit SOA Capability 3 3 4 5 6 7 8 9 10 Preliminary data 2 Driver 1 1 Protection Isolation 2 Symbol Test Conditions	Original	PDF	VIE150-12S4 IC100 VIE150-12S4 VIE150-12S fin heat sink igbt IC100
MARKING CODE Zi sot363 Abstract: WRS SOT363 Marking Code ZI ZI Marking Code transistor sot-363 marking ZI 198S Transistor WRS Text: SIEMENS BCR 198S PNP Silicon Digital Transistor Array >Switching circuit, inverter, interface circuit, driver circuit •Two galvanic internal isolated Transistors in one package ■Built in bias resistor (R1=47k£i, R2=47kQ) Type Marking Ordering Code Pin Configuration	OCR Scan	PDF	Q62702-C2419 OT-363 27llector-base MARKING CODE Zi sot363 WRS SOT363 Marking Code ZI ZI Marking Code transistor sot-363 marking ZI 198S Transistor WRS
5b1 transistor Abstract: transistor 5b1 transistor bc qe TRANSISTOR MARKING TE SOT363 Marking 1cs sot marking 1cs FR1E marking code YA Transistor 6c2 transistor Text: SIEMENS BC 847S NPN Silicon AF Transistor Array • For AF input stages and driver applications 4 • High current gain 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package 2 1 Type	OCR Scan	PDF	Q62702-C2372 OT-363 Mav-12-1998 BC847S av-12-1998 5b1 transistor transistor 5b1 transistor bc qe TRANSISTOR MARKING TE SOT363 Marking 1cs sot marking 1cs FR1E marking code YA Transistor 6c2 transistor
Untitled Abstract: No abstract text available Text: SIEMENS BC 846S NPN Silicon AF Transistor Array For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two galvanic internal isolated Transistors with high matching in one package 11 az t.£. FI iïl R Lü	OCR Scan	PDF	Q62702-C2529 OT-363
SIEMENS sr 460 Abstract: No abstract text available Text: SIEMENS GaAIAs-IR-Lumineszenzdiode GaAIAs Infrared Emitter SFH 460 Preliminary Data Wesentliche Merkmale Features • Strahlung im sichtbaren Rotbereich ohne IR-Anteil • Kathode galvanisch mit dem Gehäuse boden verbunden • Sehr hoher Wirkungsgrad • Hohe Zuverlässigkeit	OCR Scan	PDF	450k/W SIEMENS sr 460
846PN Abstract: VQE 11E Text: SIEMENS BC 846PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation	OCR Scan	PDF	846PN EHA07193 846PN Q62702-C2537 OT-363 VQE 11E
Untitled Abstract: No abstract text available Text: X F r TT r 2 2 3 .3 4 02963303 5 fixed al galv yes nr no Scho ettgu l packing pieces L work piece edges D IN 1 5 0 1 3 7 1 5 CD ISO 2768 mH 1/1 date generote #& n 020505 design dimensions ISO 2768 - in - 0 ,5 - 3 ± 0.1 3,0-6 i 0,1 6,-30 i 0,2 scale part surface	OCR Scan	PDF	M-200

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GALV Search Results

GALV Price and Stock

TDK Corporation CGA-LV01-E6-KIT

Omega Engineering SCE-36P30GALV

Omega Engineering SCE-30P24GALV

Festo VZQA-C-M22U-6-GG-ALV4N-4

Festo VZQA-C-M22U-15-GG-ALV4N-4

GALV Datasheets (58)

GALV Datasheets Context Search

Untitled

Untitled

ADM2484E

lem current lt 100

current SENSOR

sot 23-5 marking code

Untitled

Untitled

Untitled

In 0 K63

Untitled

MT29C4G96MAZBACJG-5 IT

sot23 s1a marking

scr firing

GVT71256T18

MARKING CODE CCB

CE1X

VIE150-12S4

MARKING CODE Zi sot363

5b1 transistor

Untitled

SIEMENS sr 460

846PN

Untitled