BC847S Search Results

MARKING CODE CCB

Abstract: BC847S
Contextual Info: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see

Contextual Info: SMD Type Product specification KC847S BC847S SOT-363 1.3 Unit: mm +0.1 -0.1 0.65 0.525 Features +0.15 2.3-0.15 +0.1 1.25-0.1 High current gain 0.36 Low collector-emitter saturation voltage +0.05 0.1-0.02 +0.05 0.95-0.05 0.1max +0.1 0.3-0.1 +0.1 2.1-0.1 1 E1

Contextual Info: JIANGS U CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC847S Multi-chip transistor NPN SOT-363 APPLICATION This device is designed for general purpose amplifier applications Marking :1C MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC847S Multi-chip transistor NPN SOT-363 APPLICATION This device is designed for general purpose amplifier applications C1 B2 E2 Marking :1C E1 B1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

BC847S

Abstract: VPS05604
Contextual Info: BC847S NPN Silicon AF Transistor Array 4
For AF input stages and driver applications 5 6
High current gain
Low collector-emitter saturation voltage
Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2

BC847S

Abstract: VPS05604
Contextual Info: BC847S NPN Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604

BC847S

Abstract: CBVK741B019 F63TNR FDG6302P SC70-6
Contextual Info: BC847S BC847S E2 B2 C1 C2 SC70-6 Mark: 1C B1 pin #1 E1 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. NPN Multi-Chip General Purpose Amplifier

BC847S

Abstract: SC70-6
Contextual Info: BC847S NPN Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 .055 1.40 .047(1.20) o 8 o .026TYP (0.65TYP) .021REF (0.525)REF * Features .053(1.35) .045(1.15) .096(2.45) .085(2.15) Power dissipation PCM : 0.3 W (Tamp.= 25 C)

Contextual Info: BC847S Dual General Purpose Transistor NPN Silicon 1 2 3 6 5 1 P b Lead Pb -Free 4 3 SOT -363(SC-88) 6 5 2 4 NPN+NPN Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Unit V V V mA Value

Contextual Info: BC847S NPN Silicon AF Transistor Array • For AF input stages and driver applications • High current gain 4 5 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package C1 B2 E2 6 5

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC847S SOT-363 Multi-Chip TRANSISTOR NPN FEATURES Power dissipation PCM: 300 mW (Tamb=25℃) Collector current 200 mA ICM: Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range

Contextual Info: FORWARD INTERNATIONAL ELECTRONICS LTD. BC847S SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRAN SISTO R *Compleiiieit to BC857S ABSOLUTE MAXIMUM RATINGS at Tan*=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage

BC847S

Abstract: VPS05604
Contextual Info: BC847S NPN Silicon AF Transistor Array 4
For AF input stages and driver applications 5 6
High current gain
Low collector-emitter saturation voltage
Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2

h11e

Contextual Info: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see

BC847S

Contextual Info: BC847S BC847S SOT-363 Multi-Chip TRANSISTOR NPN FEATURES Power dissipation PCM: 300 mW (Tamb=25℃) Collector current ICM: 200 mA Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS ( Tamb=25℃

ic7001

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC847S Multi-chip transistor NPN SOT-363 APPLICATION This device is designed for general purpose amplifier applications C1 B2 E2 Marking :1C E1 B1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

BC846U/S

Abstract: BC846U
Contextual Info: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see

1DS sot363

Abstract: marking 1DS sot363
Contextual Info: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see

marking 1DS sot363

Abstract: 1Ds SOT363 BC846S BC846U BC847S BC847U SC74 1CS MARKING 5 pin IC marking ms marking 1cs
Contextual Info: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see

mpsa42 "sot23"

Abstract: MPSA42 sot-223 siemens bfp22
Contextual Info: Transistors _ . For complete package outlines, refer to pages PO-1 through PO-6 Dual Transistors VCEO N=NPN *c Px fr I CBO at niA mW MHz nA VCEX V 45 45 45 200 200 200 330 330 330 250 250 250 < 15 < 15 <15 30 30 30 7c fx a ‘ N P VCBO V P=PNP BC847S BC847PN

Contextual Info: BC847S BC847S E2 B2 C1 C2 SC70-6 Mark: 1C B1 pin #1 E1 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. NPN Multi-Chip General Purpose Amplifier

marking 1c

Abstract: smd 1C Transistors Diodes smd e2 smd diode marking 77 SMD MARKING E1 BC847S BC847S Application diode marking 1c E2 SMD Transistor KC847S
Contextual Info: Transistors SMD Type NPN Multi-Chip General Purpose Amplifier KC847S BC847S SOT-363 1.3 Unit: mm +0.1 -0.1 0.65 0.525 Features +0.15 2.3-0.15 +0.1 1.25-0.1 High current gain 0.36 Low collector-emitter saturation voltage +0.05 0.1-0.02 +0.05 0.95-0.05 0.1max

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC847S SOT-363 Multi-Chip TRANSISTOR NPN FEATURES Power dissipation PCM: 200 mW (Tamb=25℃) Collector current ICM: 200 mA Collector-base voltage V(BR)CBO: 50 V Operating and storage junction temperature range

Contextual Info: BC847S BC847S E2 B2 C1 SC70-6 Mark: 1C pin #1 B1 E1 C2 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. NPN Multi-Chip General Purpose Amplifier