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    GAN TEMPERATURE COMPENSATION Search Results

    GAN TEMPERATURE COMPENSATION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCTH022BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Open-drain type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH021BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Open-drain type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH011AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH021AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation

    GAN TEMPERATURE COMPENSATION Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GaN amplifier temperature compensation

    Abstract: GAN temperature compensation 20k ohm potentiometer GaN amplifier hemt biasing thermistor 40k table NPTB00025 GaN Bias 25 watt NPT25100 AN009
    Text: APPLICATION NOTE AN-009 GaN Essentials AN-009: Bias Sequencing and Temperature Compensation for GaN HEMTs NITRONEX CORPORATION 1 OCTOBER 2008 APPLICATION NOTE AN-009 GaN Essentials: Bias Sequencing and Temperature Compensation of GaN HEMTs 1. Table of Contents


    Original     		PDF AN-009 AN-009: NPT25100 GaN amplifier temperature compensation GAN temperature compensation 20k ohm potentiometer GaN amplifier hemt biasing thermistor 40k table NPTB00025 GaN Bias 25 watt AN009

    NPTB0004

    Abstract: GaN amplifier 100W GaN Bias 25 watt vmos fet NPT25100 NPTB00004 NPTB00025 GaN amplifier temperature compensation future scope of wiMAX NPT25015
    Text: APPLICATION NOTE AN-010 GaN Essentials AN-010: GaN for LDMOS Users NITRONEX CORPORATION 1 JUNE 2008 APPLICATION NOTE AN-010 GaN Essentials: GaN for LDMOS Users 1. Table of Contents 1. TABLE OF CONTENTS. 2


    Original     		PDF AN-010 AN-010: NPT25100 NPTB0004 GaN amplifier 100W GaN Bias 25 watt vmos fet NPTB00004 NPTB00025 GaN amplifier temperature compensation future scope of wiMAX NPT25015

    Demands for High-efficiency Magnetics in GaN Power Electronics

    Abstract: 20n60cfd TPH3006
    Text: APEC 2014, Fort Worth, Texas, March 16-20, 2014, IS2.5.3 Demands for High-efficiency Magnetics in GaN Power Electronics Yifeng Wu, Transphorm Inc. Table of Contents 1. 1st generation 600V GaN-on-Si HEMT properties and performance 2. GaN HEMT high-frequency application examples


    Original     		PDF 5W/600V 9W/600V Demands for High-efficiency Magnetics in GaN Power Electronics 20n60cfd TPH3006

    BZX385-C11

    Abstract: zener diode A29
    Text: AN11130 Bias module for 50 V GaN demonstration boards Rev. 1 — 8 December 2011 Application note Document information Info Content Keywords GaN, bias Abstract This application note describes a bias controller module for GaN HEMT RF power transistors. It provides constant quiescent drain current with


    Original     		PDF AN11130 BZX385-C11 zener diode A29

    Untitled

    Abstract: No abstract text available
    Text: MAMG-000912-090PSM 960-1215 MHz 90 W 2-Stage GaN Module Surface Mount Laminate Package Rev. V1 Features •           Compact Size 14x24 mm 2 GaN on SiC D-Mode Transistor Technology Fully Matched, de-coupled DC and RF Typical Bias: 50 V, Class AB


    Original     		PDF MAMG-000912-090PSM 14x24 MAMG-000912-090PSM

    Untitled

    Abstract: No abstract text available
    Text: MAMG-001214-090PSM L-Band 90 W 2-Stage Fully Matched GaN Module Surface Mount Laminate Package Rev. V1 Features •           Very Compact Size 14x24 mm2 GaN on SiC D-Mode Transistor Technology Fully Matched, de-coupled DC and RF


    Original     		PDF MAMG-001214-090PSM 14x24 MAMG-001214-090PSM

    GaN amplifier temperature compensation

    Abstract: No abstract text available
    Text: Part Number: QBS-561 Broadband 32 Watt GaN Power Amplifier 2400 to 6000 MHz high power, class AB design utilizing GaN technology Features *Similar Model • 32 Watts Typical Saturated Output Power • Rugged GaN Technology • Adaptive Biasing to Promote Efficiency


    Original     		PDF QBS-561 QBS-561 GaN amplifier temperature compensation

    Untitled

    Abstract: No abstract text available
    Text: Part Number: QBS-560 Broadband 32 Watt GaN Power Amplifier 700 to 2500 MHz high power, class AB design utilizing GaN technology Features o 32 Watts Typical Saturated Output Power o Microprocessor Based Control o Rugged GaN Technology o Adaptive Biasing to Promote Efficiency


    Original     		PDF QBS-560 QBS-560

    QBS-559

    Abstract: No abstract text available
    Text: Part Number: QBS-559 Broadband 50 Watt GaN Power Amplifier 20 to 800 MHz high power, class AB design utilizing GaN technology Features *Similar Model • 65 Watts Typical Saturated Output Power • Rugged GaN Technology • Adaptive Biasing to Promote Efficiency


    Original     		PDF QBS-559 QBS-559

    Untitled

    Abstract: No abstract text available
    Text: ISO 9001:2008 Certified AMCOM Communications, Inc. Product Brochure April 2015 ISO 9001:2008 Certified Registration # 220501.1Q ISO 9001:2008 Certified Section 1 - AMCOM Communications, Inc. AMCOM was established in December 1996 by a group of microwave engineers experienced in both


    Original     		PDF

    FETDRV

    Abstract: No abstract text available
    Text: Sample & Buy Product Folder Support & Community Tools & Software Technical Documents LMP92066 SNAS634 – MARCH 2014 LMP92066 Dual Temperature-Controlled DAC with Integrated EEPROM and Output ON/OFF Control 1 Features 3 Description • The LMP92066 is a highly integrated temperaturecontrolled dual DAC. Both DACs can be programmed


    Original     		PDF LMP92066 SNAS634 LMP92066 FETDRV

    FETDRV

    Abstract: No abstract text available
    Text: Sample & Buy Product Folder Support & Community Tools & Software Technical Documents LMP92066 SNAS634 – MARCH 2014 LMP92066 Dual Temperature-Controlled DAC with Integrated EEPROM and Output ON/OFF Control 1 Features 3 Description • The LMP92066 is a highly integrated temperaturecontrolled dual DAC. Both DACs can be programmed


    Original     		PDF LMP92066 SNAS634 LMP92066 FETDRV

    fetdrv1

    Abstract: FETDRV
    Text: Sample & Buy Product Folder Support & Community Tools & Software Technical Documents LMP92066 SNAS634 – MARCH 2014 LMP92066 Dual Temperature-Controlled DAC with Integrated EEPROM and Output ON/OFF Control 1 Features 3 Description • The LMP92066 is a highly integrated temperaturecontrolled dual DAC. Both DACs can be programmed


    Original     		PDF LMP92066 SNAS634 LMP92066 fetdrv1 FETDRV

    cantilever for AFM

    Abstract: PZT 855 cdte topography ZnSe GE 7031
    Text: Scanning Microwave Microscopy SMM Mode Highly Sensitive Imaging Mode for Complex, Calibrated Electrical and Spatial Measurements Data Sheet VNA (left), and AFM scanner and 5420 (right). Features and Benefits Overview • Provides exceptionally high spatial


    Original     		PDF 5989-8817EN cantilever for AFM PZT 855 cdte topography ZnSe GE 7031

    GaN amplifier

    Abstract: GaN amplifier temperature compensation SM2560-47GN GaN temperature compensation RF connector rack-mounted modular 17W2 rf gan amplifier
    Text: Model SM2560-47GN 2500 - 6000 MHz 50 Watt Power Amplifier FOR MILITARY APPLICATIONS PRELIMINARY The SM2560-47GN is a 2.5 to 6.0 GHz solid state GaN amplifier designed for various commercial and military applications. The amplifier provides 45 dB of linear gain with a typical Psat of +47


    Original     		PDF SM2560-47GN SM2560-47GN Conn00 GaN amplifier GaN amplifier temperature compensation GaN temperature compensation RF connector rack-mounted modular 17W2 rf gan amplifier

    817B OPTOCOUPLER 4-PIN

    Abstract: optocoupler 817C optocoupler 817a optocoupler 817b 817C optocoupler OPTOCOUPLER 817c data sheet 817c OPTO-coupler 817c 4 pin phototransistor 4 pin optocoupler 817a LTV-817C
    Text: Analog Discrete Interface & Logic Optoelectronics Optoelectronics Power Solutions Power Conversion Power Conversion Circuits • ac to dc Power Supplies • ac to dc Battery Chargers • dc to dc Converters Optoelectronics Components • Optocouplers • Optically Isolated Error Amplifier


    Original     		PDF

    BB 509 varicap diode

    Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
    Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original     		PDF

    ZENER 13,8V

    Abstract: MLX10801 MLX10803 light dependent resistor circuit power supply LED
    Text: FACT PAGE Power supply/LED drivers gives a resistance value of 11.6V / 0.045A ≈ 258Ω ≈ 270Ω / 1W as current limiter. The resistor must handle a loss of 11.6V x 0.045A ≈ 0.52 W. The total power consumption is 13.8V x 0.05A = 0.62 W and electric


    Original     		PDF ISO14001 Jul/07 ZENER 13,8V MLX10801 MLX10803 light dependent resistor circuit power supply LED

    Untitled

    Abstract: No abstract text available
    Text: RF2363 Preliminary  '8$/%$1' 9 /2: 12,6 $03/, ,(5 7\SLFDO $SSOLFDWLRQV • GSM/DCS Dual-Band Handsets • General Purpose Amplification • Cellular/PCS Dual-Band Handsets • Commercial and Consumer Systems GENERAL PURPOSE AMPLIFIERS 4 3URGXFW 'HVFULSWLRQ


    Original     		PDF RF2363 RF2363 950MHz 1850MHz 900MHz 1900MHz

    2057 LED dot matrix display 5x7

    Abstract: BQ24153 TPS65175 tps59620 TPS51624 LM2585 36 V - 72 V to 24 V LM5045 lm3630 lm5160 schematic diagram TCON lcd samsung
    Text: Power Management Guide Power Management Guide 2015 www.ti.com/power www.ti.com/power 2015 Power Management Guide Introduction and Contents Texas Instruments TI offers complete power solu­tions with a full line of highperformance products. These products, which range from standard linear


    Original     		PDF

    AN067

    Abstract: SDM-09120 AN054 GaN amplifier temperature compensation
    Text: SDM-09120 Y SDM-09120(Y) Low Noise, High Gain SiGe HBT 925 MHz to 960 MHz CLASS AB 130 W POWER AMPLIFIER MODULE NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free (Y Part Number) Product Description Features „ „ „ Available in RoHS Compliant Packaging


    Original     		PDF SDM-09120 interDS-104211 AN054, EDS-104211 AN067 AN054 GaN amplifier temperature compensation

    104208

    Abstract: GSM repeater power amplifier module AN054 1042-08 SDM-08060-B1F high power fet amplifier schematic EDS-104208 SDM-08060
    Text: SDM-08060-BIF Y SDM-08060BIF(Y)869 MHz to 894 MHz Class AB 65 W Power Amplifier Module 869 MHz to 894 MHz CLASS AB 65 W POWER AMPLIFIER MODULE NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free (Y Part Number) Package: B Product Description Features


    Original     		PDF SDM-08060-BIF SDM-08060BIF SDM-08060-B1F AN054, EDS-104208 104208 GSM repeater power amplifier module AN054 1042-08 high power fet amplifier schematic SDM-08060

    bluetooth transmitter receiver circuit diagram

    Abstract: Bluetooth internal circuit diagram circuit diagram of bluetooth video transmitter bluetooth transmitter circuit diagram circuit diagram of bluetooth headset circuit diagram of bluetooth data transfer circuit diagram bluetooth headset error detection and correction of bluetooth bluetooth transmitter receiver audio protocol communication for radio control car
    Text: SiW3500 Preliminary • Mobile phone integration requiring low power and high quality audio performance. • PDAs and smart communication devices. • Bluetooth hands-free car kit. • Bluetooth audio headset. • Cable replacement for consumer products. PLL


    Original     		PDF SiW3500 bluetooth transmitter receiver circuit diagram Bluetooth internal circuit diagram circuit diagram of bluetooth video transmitter bluetooth transmitter circuit diagram circuit diagram of bluetooth headset circuit diagram of bluetooth data transfer circuit diagram bluetooth headset error detection and correction of bluetooth bluetooth transmitter receiver audio protocol communication for radio control car

    Untitled

    Abstract: No abstract text available
    Text: RF2314 I MICRO-DEVICES GEN ER AL PURPOSE LOW NOISE AMPLIFIER T y p ic a l A p p lic a tio n s • Broadband Gain Blocks Driver Stage for Power Amplifiers • Final PA for Low-Power Applications Oscillator Loop Amplifiers GENERAL PURPOSE AMPLIFIERS • IF or RF Buffer Amplifiers


    OCR Scan     		PDF RF2314 150MHz, 900MHz, 1900MHz, 2400MHz,