ZNSE Search Results
ZNSE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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RLZS-2012Contextual Info: = ZnSe WHITE LED = MODEL: RLZS-2012 top LED, 2.0 mm x 1.2 mm x 1.0 mm 1. SPECIFICATION: 1.1 Absolute maximum ratings at Ta=25℃ |
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RLZS-2012 000hrs RLZS-2012 | |
RLZS-1608Contextual Info: = ZnSe WHITE LED = RLZS-1608 Chip type LED, 1.6mm x 0.8mm x 0.6mm 1. SPECIFICATION: 1.1 Absolute maximum ratings at Ta=25℃ |
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RLZS-1608 000hrs RLZS-1608 | |
transistor C3866
Abstract: C3866 C3866* transistor c3866 transistor C3866 FE M7824 FE P C3866 FE P C3866 17 R5509-42 pmt divider circuit
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R5509-42/R5509-72 SE-171-41 TPMH1267E02 transistor C3866 C3866 C3866* transistor c3866 transistor C3866 FE M7824 FE P C3866 FE P C3866 17 R5509-42 pmt divider circuit | |
MIRL17-900
Abstract: International Technology Exchange Infrared light source mems IR emitter ZnSe INTEX
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MIRL17-900 mirl17-900 International Technology Exchange Infrared light source mems IR emitter ZnSe INTEX | |
ZnSe
Abstract: TO8 socket
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SE-164 LQCL2001E04 ZnSe TO8 socket | |
Contextual Info: MCT photoconductive detectors P3257/P3981/P2750 series Non-cooled type and TE-cooled type suitable for long, continuous operation Features Applications Choice of spectral response up to 12 m The band gap can be adjusted by controlling the composition ratio of HgTe and CdTe. Utilizing this fact, various types are |
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P3257/P3981/P2750 B1201, KIRD1025E13 | |
Contextual Info: MCT光導電素子 P3257/P3981/P2750シリーズ 長時間の測定が可能な常温型電子冷却型 特長 用途 さまざまな感度波長範囲 ~12 m HgTeとCdTeの組成比によってバンドギャップが変わります。 分光感度特性の異なるタイプを用意しています。 |
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P3257/P3981/P2750ã KIRDA0123JB KIRDA0045JE KIRD1025J13 | |
Contextual Info: MCT photoconductive detectors P2748/P5274 series Dewar type detector with high sensitivity and high-speed response in long wavelength range Features Applications Choice of spectral response range up to 25 m The band gap can be adjusted by controlling the composition |
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P2748/P5274 KIRD1021E09 | |
DewarContextual Info: MCT photoconductive detectors P2748/P5274 series Dewar type detector with high sensitivity and high-speed response in long wavelength range Features Applications Choice of spectral response range up to 25 m The band gap can be adjusted by controlling the composition |
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P2748/P5274 KIRD1021E10 Dewar | |
Contextual Info: Pulsed Broadband Infrared Light Source MIRL17-900 Intex has developed a series of unique high-intensity pulsed infrared IR light sources capable of operating at high frequencies. Modulation of the light output is achieved by modulating the input electrical power, |
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MIRL17-900 100mm. mirl17-900 | |
Contextual Info: Pulsed Broadband Infrared Light Source MIRL17-900 Intex has developed a series of unique high-intensity pulsed infrared IR light sources capable of operating at high frequencies. Modulation of the light output is achieved by modulating the input electrical power, |
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MIRL17-900 Hig8142 mirl17-900 | |
ZnSeContextual Info: LUM E^Utes COLOR/INTENSITY SORTING LIGHT INTENSITY @ 10mA GROIN» LIGHT INTENSITY @ 20mA LIGHT INTENSITY Med @/10rnA GROUP mln. F G H 1 K L M N P Q R S T U V w 0,1 0,2 0,32 05 0,8 1,25 2 3,2 5 B 12,5 20 32 50 80 125 0,2 0,32 A B C O E' F Q H J K L M N P Q |
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/10rnA /20mA sPa85 ZnSe | |
Contextual Info: LASERS & MATERIAL PROCESSING I OPTICAL SYSTEMS I INDUSTRIAL METROLOGY I TRAFFIC SOLUTIONS I DEFENSE & CIVIL SYSTEMS Diffractive Diffusers Diffractive diffusers spread and homogenize laser beams over a controlled small angle. This results in a uniform farield intensity proile with very sharp edges and a top-hat |
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029112-003-99-14-0410-en | |
Contextual Info: LASERS & MATERIAL PROCESSING I OPTICAL SYSTEMS I INDUSTRIAL METROLOGY I TRAFFIC SOLUTIONS I DEFENSE & CIVIL SYSTEMS Diffractive Line Generators Single transverse mode lasers such as many solid-state lasers, diode lasers, gas lasers and frequency double or |
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029126-003-99-14-0410-en | |
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P3257
Abstract: A3515 C5185 P2748-40 P2748-41 P2748-42 P3257-50 P5274 P5274-01 P7752-10
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P2748/P5274, P3257-50 A3515 C5185 P7752-10 P2748-40 P2748-41 P2748-42 P5274 P5274-01 P3257 A3515 C5185 P2748-40 P2748-41 P2748-42 P3257-50 P5274 P5274-01 P7752-10 | |
LDD-C514R1
Abstract: LDD-A514R1 LDQ-N516R1-RA LDQ-M512R1 IFR 630 MF 1T4 tube RGB DOT matrix 8x8 LED common anode LDS-AD16RI LDQ-N516R1 LDS-A3914RI
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HgCdTe
Abstract: PA100 ZnSe judson PA-100
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303Db05 J15TE J1435-Ì J15TE2-66S J15TE3-66S J15TE2 J15TE3 5-66S HgCdTe PA100 ZnSe judson PA-100 | |
ecl82
Abstract: Pcl82 PH ON 4307 ECL 82 PCL82 tube triode ecl82 ucl82 UCl 82 UCl 82, base bfj 47
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ecl82 PCL82| ecl82| ecl82 Pcl82 PH ON 4307 ECL 82 PCL82 tube triode ecl82 ucl82 UCl 82 UCl 82, base bfj 47 | |
ZnSeContextual Info: Z&MM^-Utes COLOR/INTENSITY SORTING LIGHT INTENSITY @ 20mA LIGHT INTENSITY @ 10mA GROUP LIGHT INTENSITY Med @/10mA F G H 1 K L M N P Q R S T U V w m ln. max. 0,1 0,2 0,32 0,5 0,8 1,25 2 3,2 5 8 12,5 20 32 50 80 Í25 0,2 0,32 0,5 0,8 1,25 2 3,2 5 & 12,5 20 |
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/10mA /20mA GaAS04sPo ZnSe | |
Contextual Info: Pulsed Broadband Infrared Light Source MIRL17-900 Intex has developed a series of unique high-intensity pulsed infrared IR light sources capable of operating at high frequencies. Modulation of the light output is achieved by modulating the input electrical power, |
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MIRL17-900 MIRL17-900. mirl17-900 | |
Contextual Info: Pulsed Broadband Infrared Light Source MIRL17-900 Intex has developed a series of unique high-intensity pulsed infrared IR light sources capable of operating at high frequencies. Modulation of the light output is achieved by modulating the input electrical power, |
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MIRL17-900 mirl17-900 | |
FYD-4400
Abstract: PERKINELMER xenon FLASH lamp Lite-Pac arc xenon flash lamps PS-4400 Flashlamp FX-4400 PerkinElmer 1700 PerkinElmer fyd-1150 PERKINELMER FLASH lamp
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FX-4400 160nm FX-4400 PS-4400 D-65199 DS307 FYD-4400 PERKINELMER xenon FLASH lamp Lite-Pac arc xenon flash lamps Flashlamp PerkinElmer 1700 PerkinElmer fyd-1150 PERKINELMER FLASH lamp | |
2N9860
Abstract: 2N3869 2N3880 2N3856 n3860 transistor 2N3 2N2711 2N2712 2N3858 2N2714
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2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N9860 2N3869 2N3880 2N3856 n3860 transistor 2N3 2N3858 | |
On the Compression and Blocking Distortion of Semiconductor-Based VaractorsContextual Info: This article has been accepted for inclusion in a future issue of this journal. Content is final as presented, with the exception of pagination. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES 1 On the Compression and Blocking Distortion of Semiconductor-Based Varactors |
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