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Abstract: No abstract text available
Text: CSD16340Q3 SLPS247D – DECEMBER 2009 – REVISED NOVEMBER 2011 www.ti.com N-Channel NexFET Power MOSFETs Check for Samples: CSD16340Q3 FEATURES 1 • • • • • • • • • 2 PRODUCT SUMMARY Optimized for 5V Gate Drive Resistance Rated at VGS = 2.5V
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CSD16340Q3
SLPS247D
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Untitled
Abstract: No abstract text available
Text: CSD16340Q3 SLPS247D – DECEMBER 2009 – REVISED NOVEMBER 2011 www.ti.com N-Channel NexFET Power MOSFETs Check for Samples: CSD16340Q3 FEATURES 1 • • • • • • • • • 2 PRODUCT SUMMARY Optimized for 5V Gate Drive Resistance Rated at VGS = 2.5V
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CSD16340Q3
SLPS247D
CSD16340Q3
13-inch
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Untitled
Abstract: No abstract text available
Text: CSD16340Q3 SLPS247D – DECEMBER 2009 – REVISED NOVEMBER 2011 www.ti.com N-Channel NexFET Power MOSFETs Check for Samples: CSD16340Q3 FEATURES 1 • • • • • • • • • 2 PRODUCT SUMMARY Optimized for 5V Gate Drive Resistance Rated at VGS = 2.5V
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CSD16340Q3
SLPS247D
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Untitled
Abstract: No abstract text available
Text: CSD16323Q3 SLPS224B – AUGUST 2009 – REVISED NOVEMBER 2011 www.ti.com N-Channel NexFET Power MOSFETs Check for Samples: CSD16323Q3 FEATURES 1 • • • • • • • • 2 Optimized for 5V Gate Drive Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated
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CSD16323Q3
SLPS224B
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Untitled
Abstract: No abstract text available
Text: CSD16323Q3 SLPS224B – AUGUST 2009 – REVISED NOVEMBER 2011 www.ti.com N-Channel NexFET Power MOSFETs Check for Samples: CSD16323Q3 FEATURES 1 • • • • • • • • 2 Optimized for 5V Gate Drive Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated
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CSD16323Q3
SLPS224B
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Untitled
Abstract: No abstract text available
Text: CSD16323Q3 SLPS224B – AUGUST 2009 – REVISED NOVEMBER 2011 www.ti.com N-Channel NexFET Power MOSFETs Check for Samples: CSD16323Q3 FEATURES 1 • • • • • • • • 2 Optimized for 5V Gate Drive Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated
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CSD16323Q3
SLPS224B
CSD16323Q3
13-inch
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Untitled
Abstract: No abstract text available
Text: CSD16323Q3 SLPS224B – AUGUST 2009 – REVISED NOVEMBER 2011 www.ti.com N-Channel NexFET Power MOSFETs Check for Samples: CSD16323Q3 FEATURES 1 • • • • • • • • 2 Optimized for 5V Gate Drive Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated
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CSD16323Q3
SLPS224B
CSD16323Q3
13-inch
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ATL60
Abstract: gate drive calculator 0348C
Text: Gate Array Mixed Voltage Designing ATL60 Series Gate Arrays For Mixed Voltage Operation Introduction As the demand for lower power consumption and voltage has increased the use of 3.3 volt systems, the need for components which can operate in a mixed voltage environment generally,
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ATL60
gate drive calculator
0348C
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ATL60
Abstract: No abstract text available
Text: Gate Array Mixed Voltage Designing ATL60 Series Gate Arrays For Mixed Voltage Operation Introduction As the demand for lower power consumption and voltage has increased the use of 3.3 volt systems, the need for components which can operate in a mixed voltage environment generally,
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ATL60
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ANP-32
Abstract: XRP77 XRP7713
Text: P owe r X R ANP-32 Practical Layout Guidelines for PowerXR Designs August 2010 By: Bryan Smith – Senior Field Applications Engineer Kevin Parmenter – Advanced Technical Marketing Director PowerXR GENERAL DESCRIPTION Rev. 1.0.0 LAYOUT GUIDELINES CHECKLIST
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ANP-32
XRP77
XRP7713
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power supply 5 Volt
Abstract: variable power supply circuit application of variable power supply circuit "Level Shifter" 50 volt power supply IC for power supply atl80
Text: Gate Array Mixed Voltage Designing ATL80 Series Gate Arrays For Mixed Voltage Operation Introduction As the demand for lower power consumption and voltage has increased the use of 3.3 volt systems, the need for components which can operate in a mixed voltage
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ATL80
power supply 5 Volt
variable power supply circuit
application of variable power supply circuit
"Level Shifter"
50 volt power supply
IC for power supply
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SiB914
Abstract: Si4230 LTC4365ITS8 LT3850 LTC4356 LTC4365 marking r4b diode LTC4365C 12V 1A MOSFET N-channel LTC4365HDDB
Text: LTC4365 UV, OV and Reverse Supply Protection Controller FEATURES DESCRIPTION n The LTC 4365 protects applications where power supply input voltages may be too high, too low or even negative. It does this by controlling the gate voltages of a pair of external N-channel MOSFETs to ensure that the output
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LTC4365
10oldback
LTC4260
LTC4352
LTC4354
LTC4355
4365f
SiB914
Si4230
LTC4365ITS8
LT3850
LTC4356
LTC4365
marking r4b diode
LTC4365C
12V 1A MOSFET N-channel
LTC4365HDDB
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LT3850
Abstract: No abstract text available
Text: LTC4365 UV, OV and Reverse Supply Protection Controller FEATURES n n n n n n n n n n n DESCRIPTION Wide Operating Voltage Range: 2.5V to 34V Overvoltage Protection to 60V Reverse Supply Protection to –40V Blocks 50Hz and 60Hz AC Power No Input Capacitor or TVS Required for Most
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LTC4365
TSOT-23
LTC4260
LTC4352
LTC4354
LTC4355
4365f
LT3850
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SiB914
Abstract: LT3850 TRANZORB 4925 B mosfet Si4230 LTC4365 SI4946 SI9945 tranz LTC4365ITS8
Text: LTC4365 UV, OV and Reverse Supply Protection Controller FEATURES n n n n n n n n n n n DESCRIPTION Wide Operating Voltage Range: 2.5V to 34V Overvoltage Protection to 60V Reverse Supply Protection to –40V Blocks 50Hz and 60Hz AC Power No Input Capacitor or TVS Required for Most
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LTC4365
TSOT-23
LTC4260
LTC4352
LTC4354
LTC4355
LTC3827/LTC3827-1
4365f
SiB914
LT3850
TRANZORB
4925 B mosfet
Si4230
LTC4365
SI4946
SI9945
tranz
LTC4365ITS8
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H92B
Abstract: db1n DUAL-PORT STATIC RAM AT24K
Text: SRAMs Compiled gate level SRAMs Atmel offers a variety of SRAMs compiled within the ATL80 series of gate arrays. These SRAMs utilize the standard metallization process, and are implemented using the gate array sites to form memory elements. The SRAMs are fully static with
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ATL80
H92B
db1n
DUAL-PORT STATIC RAM
AT24K
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Untitled
Abstract: No abstract text available
Text: KIT ATION EVALU E L B A IL AVA 19-3443; Rev 3; 4/10 1V to 13.2V, n-Channel Hot-Swap Controllers Require No Sense Resistor The MAX5924/MAX5925/MAX5926 1V to 13.2V hot-swap controllers allow the safe insertion and removal of circuit cards into live backplanes. These devices hot swap supplies ranging from 1V to 13.2V provided that the device
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MAX5924/MAX5925/MAX5926
MAX5924BEUB
MAX5924/MAX5925/MAX5926
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MAX5926
Abstract: MAX5924 MAX5924AEUB MAX5924BEUB MAX5924CEUB MAX5924DEUB MAX5925 MAX5925AEUB
Text: KIT ATION EVALU E L B A IL AVA 19-3443; Rev 3; 4/10 1V to 13.2V, n-Channel Hot-Swap Controllers Require No Sense Resistor The MAX5924/MAX5925/MAX5926 1V to 13.2V hot-swap controllers allow the safe insertion and removal of circuit cards into live backplanes. These devices hot swap supplies ranging from 1V to 13.2V provided that the device
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MAX5924/MAX5925/MAX5926
MAX5924BEUB
MAX5924/MAX5925/MAX5926
MAX5926
MAX5924
MAX5924AEUB
MAX5924CEUB
MAX5924DEUB
MAX5925
MAX5925AEUB
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DC to AC converter
Abstract: digital watch circuit C1002 C1002B C1002A C-1002 1N4148 ac dC converter circuit diagram EL driving power circuit diagram for street light circuit
Text: RCL Semiconductors Ltd. C1002 EL Lamp Driver IC GENERAL DESCRIPTION The C1002 series product is a poly gate CMOS integrated circuit which is designed to drive an Electoluminescence Lamp EL to light. It supplies one pin for trigger input. 3 seconds display delay
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C1002
C1002A
C1002B
1N4148
DC to AC converter
digital watch circuit
C-1002
ac dC converter circuit diagram
EL driving
power circuit diagram for street light circuit
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C1001A
Abstract: C1001 C-1001
Text: RCL Semiconductors Ltd. EL Lamp Driver 1C_ C1001A GENERAL DESCRIPTION The C1001A series product is a poly gate CMOS integrated circuit which is designed to drive an Electoluminescence Lamp EL to light. It supplies three pins for trigger input: one is active at tow (ALM) and
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C1001A
C1001
C-1001
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N5551
Abstract: DC to AC converter 1N4148 2N5551 C1001D j3mh el display
Text: RCL Semiconductors Ltd. C1001D EL Lamp Driver 1C GENERAL DESCRIPTION The C1001D series product is a poly gate CMOS integrated circuit which is designed to drive an Electoluminescence Lamp EL to light. It supplies three pins for trigger input: one is active at low (ALM) and
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C1001D
2N5551
1001D
N5551
DC to AC converter
1N4148
j3mh
el display
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C1003
Abstract: k c1003 EL3N 1N4148 2N5551 MPSA42 1N4148 operating frequency 54MIL
Text: Preliminary Specification RCL Semiconductors Ltd. Flashing EL Lamp Driver 1C_ GENERAL C1003 DESCRIPTION C 1003 is a poly gate CMOS integrated circuit which is designed to drive an Electoluminescence Lamp EL to light with flashing. It supplies three input pins to control three ELs or four ELs to flash, which is
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C1003
2N5551
MPSA42
C1Q03
k c1003
EL3N
1N4148
1N4148 operating frequency
54MIL
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C1001B
Abstract: el display
Text: RCL Semiconductors Ltd. EL Lamp Driver IC_ GENERAL C1001B D E S C R IP T IO N The C1001B series product is a poly gate CMOS integrated circuit which is designed to drive an Electoluminescence Lamp EL to light. It supplies three pins for trigger input: one is active at low (ALM) and
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C1001B
2n5551
el display
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8-bit johnson
Abstract: verilog code for johnson counter 4 to 2 priority encoder modulo 16 johnson counter AD1032 phbx T74153 16 bit ripple adder verilog code for barrel shifter SEC 022D
Text: KG80/KGM 80 Gate Array Library 0.5nm 5V CMOS Process PRELIMINARY Library Description SEC ASIC offers KG80 5V gate array family and KGM80 3.3 V gate array family. KG80 and KGM80 are 0.5 Am CMOS processes supporting double-layer or triple-layer metal interconnection options.
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KG80/KGM
KGM80
8-bit johnson
verilog code for johnson counter
4 to 2 priority encoder
modulo 16 johnson counter
AD1032
phbx
T74153
16 bit ripple adder
verilog code for barrel shifter
SEC 022D
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74152 PIN DIAGRAM
Abstract: application of ic 74153 A022A 74373 verilog 74373 cmos dual s-r latch 74240T LN 741 T749
Text: KGL80 ^ ^ ^ ^ ^ ^ ^ ^ jE L E C T R O N i Gate Array Library 0.5um 3.3V CMOS Process PRELIMINARY Library Description KG L80 is a 0 .5 n m 3 .3 V C M O S gate array library supporting d ouble-layer o r triple-layer metal interconnection options. This process is optim ized for
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KGL80
VSS30P
VSS50
74152 PIN DIAGRAM
application of ic 74153
A022A
74373 verilog
74373 cmos dual s-r latch
74240T
LN 741
T749
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