SI4946 Search Results

SI4946 Datasheets (14)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SI4946BEY	Vishay Siliconix	Dual N-Channel 60-V (D-S) 175°C MOSFET	Original	PDF	125.64KB	7
SI4946BEY-T1-E3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 60V 6.5A 8-SOIC	Original	PDF		10
SI4946BEY-T1-GE3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 60V 6.5A 8-SOIC	Original	PDF		10
SI4946CDY-T1-GE3	Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET N-CHAN DUAL 60V SO-8	Original	PDF	160.86KB
Si4946EY	Unknown	Metal oxide N-channel FET, Enhancement Type	Original	PDF	42.75KB	4
SI4946EY	Unknown	Dual N-Channel 60-V (D-S), 175°C MOSFET	Original	PDF	53.59KB	4
Si4946EY	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF	165.78KB	67
Si4946EY	Vishay Intertechnology	Dual N-Channel 60-V (D-S), 175°C MOSFET	Original	PDF	68.39KB	4
SI4946EY	Vishay Siliconix	MOSFET, DUAL NN SO-8MOSFET, DUAL NN SO-8; Transistor type:MOSFET; Transistor polarity:Dual N; Voltage, Vds max:60V; Case style:SO-8; Current, Id cont:4.5A; Current, Idm pulse:30A; Power, Pd:2.4W; Resistance, Rds on:0.055R; SMD:1;	Original	PDF	72.87KB	5
SI4946EY	General Semiconductor	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, N-Channel, 60V, Dual, Pkg Style SO-8	Scan	PDF	79.97KB	1
SI4946EY-DS	Vishay Telefunken	DS-Spice Model for Si4946EY	Original	PDF	210.04KB	3
Si4946EY SPICE Device Model	Vishay	Dual N-Channel 50-V (D-S) Dual MOSFET	Original	PDF	210.04KB	3
Si4946EY-T1	Vishay Siliconix	Dual N-Channel 60-V (D-S), 175°C MOSFET	Original	PDF	42.74KB	4
SI4946EY-T1-E3	Vishay Siliconix	MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:4.5A; On-Resistance, Rds(on):55mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SO-8; Leaded Process Compatible:Yes	Original	PDF	72.87KB	5

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Vishay Siliconix SI4946BEY-T1-GE3 MOSFET 2N-CH 60V 6.5A 8SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	SI4946BEY-T1-GE3	Digi-Reel	13,228			1 - 10 - 100 - 1000 - 10000 -	Buy Now
	SI4946BEY-T1-GE3	Cut Tape	13,228		1	1 $2.37 10 $1.52 100 $1.04 1000 $0.76 10000 $0.76	Buy Now
	SI4946BEY-T1-GE3	Reel	7,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.66	Buy Now
RS	SI4946BEY-T1-GE3	Bulk			2,500	1 - 10 - 100 - 1000 - 10000 $0.97	Get Quote
Vishay Siliconix SI4946CDY-T1-GE3 MOSFET 2N-CH 60V 5.2A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	SI4946CDY-T1-GE3	Cut Tape	2,372		1	1 $1.27 10 $0.83 100 $0.56 1000 $0.40 10000 $0.40	Buy Now
	SI4946CDY-T1-GE3	Digi-Reel	2,372		1	1 $1.27 10 $0.83 100 $0.56 1000 $0.40 10000 $0.40	Buy Now
	SI4946CDY-T1-GE3	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.32	Buy Now
Vishay Siliconix SI4946BEY-T1-E3 MOSFET 2N-CH 60V 6.5A 8SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	SI4946BEY-T1-E3	Digi-Reel	1,586		1	1 $2.37 10 $1.52 100 $1.04 1000 $0.76 10000 $0.76	Buy Now
	SI4946BEY-T1-E3	Cut Tape	1,586		1	1 $2.37 10 $1.52 100 $1.04 1000 $0.76 10000 $0.76	Buy Now
	SI4946BEY-T1-E3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
RS	SI4946BEY-T1-E3	Bulk	5,000		1	1 $1.70 10 $1.49 100 $1.36 1000 $1.27 10000 $1.27	Buy Now
Quest Components	SI4946BEY-T1-E3		2,024			1 $1.20 10 $1.20 100 $1.20 1000 $0.50 10000 $0.44	Buy Now
Vishay Intertechnologies SI4946BEY-T1-E3 MOSFET Array, Dual N Channel, 60 V, 6.5 A, 41 mOhm, SOIC, 8 Pin - Product that comes on tape, but is not reeled (Alt: 75M3216)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas ()	SI4946BEY-T1-E3	Ammo Pack		111 Weeks	1	1 $1.57 10 $1.16 100 $0.92 1000 $0.92 10000 $0.92	Buy Now
	SI4946BEY-T1-E3	Reel		111 Weeks	7,500	1 - 10 - 100 - 1000 - 10000 $0.64	Buy Now
Newark ()	SI4946BEY-T1-E3	Cut Tape	4,909		1	1 $0.91 10 $0.91 100 $0.83 1000 $0.77 10000 $0.77	Buy Now
	SI4946BEY-T1-E3	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.76	Buy Now
Bristol Electronics	SI4946BEY-T1-E3		6,214			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	SI4946BEY-T1-E3		1,040			1 $2.50 10 $2.50 100 $0.75 1000 $0.65 10000 $0.65	Buy Now
TME	SI4946BEY-T1-E3		3,250		1	1 $1.28 10 $1.05 100 $0.82 1000 $0.62 10000 $0.45	Buy Now

New Advantage Corporation	SI4946BEY-T1-E3		2,500		1	1 - 10 - 100 - 1000 - 10000 $0.60	Buy Now
Vyrian	SI4946BEY-T1-E3		24,377			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies SI4946CDY-T1-GE3 Dual MOSFET, N Channel, 60 V, 60 V, 6.1 A, 6.1 A, 0.033 ohm - Product that comes on tape, but is not reeled (Alt: 50AC9666)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas ()	SI4946CDY-T1-GE3	Ammo Pack		16 Weeks, 4 Days	1	1 $1.18 10 $0.80 100 $0.57 1000 $0.57 10000 $0.57	Buy Now
	SI4946CDY-T1-GE3	Reel		29 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 $0.35	Buy Now
Mouser Electronics	SI4946CDY-T1-GE3		16,821			1 $1.15 10 $0.81 100 $0.55 1000 $0.39 10000 $0.34	Buy Now
Newark ()	SI4946CDY-T1-GE3	Cut Tape	8,055		1	1 $1.25 10 $0.81 100 $0.56 1000 $0.56 10000 $0.56	Buy Now
	SI4946CDY-T1-GE3	Cut Tape	4,823		1	1 $0.44 10 $0.44 100 $0.41 1000 $0.41 10000 $0.41	Buy Now
	SI4946CDY-T1-GE3	Reel			1	1 $0.45 10 $0.45 100 $0.45 1000 $0.45 10000 $0.41	Buy Now
TTI	SI4946CDY-T1-GE3	Reel	2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.32	Buy Now
Avnet Asia	SI4946CDY-T1-GE3			31 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

EBV Elektronik	SI4946CDY-T1-GE3			30 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	SI4946CDY-T1-GE3		771		1	1 $11.55 10 $11.55 100 $11.55 1000 $11.55 10000 $11.55	Buy Now
Vyrian	SI4946CDY-T1-GE3		6,251			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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SI4946 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Si4946BEY-T1-E3 Abstract: Si4946BEY SI4946BEY-T1-GE3 Contextual Info: Si4946BEY Vishay Siliconix Dual N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.041 at VGS = 10 V 6.5 0.052 at VGS = 4.5 V 5.8 Qg (Typ.) 9.2 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si4946BEY 2002/95/EC Si4946BEY-T1-E3 Si4946BEY-T1-GE3 18-Jul-08	PDF
50524 Abstract: si4946 SI4946EY-T1 Si4946EY SI4946EY-E3 Contextual Info: Si4946EY Vishay Siliconix Dual N-Channel 60-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.055 @ VGS = 10 V 4.5 0.075 @ VGS = 4.5 V 3.9 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested SO-8 Pb-free	Original	Si4946EY Si4946EY-T1 Si4946EY--E3 Si4946EY-T1--E3 08-Apr-05 50524 si4946 SI4946EY-E3	PDF
4026 datasheet Abstract: A 2231 AN609 Si4946BEY 36892 1.0895 3-3-508 Contextual Info: Si4946BEY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si4946BEY AN609 23-Jan-06 4026 datasheet A 2231 36892 1.0895 3-3-508	PDF
74067 Abstract: SI4946BEY-T1-E3 SI4946EY-T1-E3 Si4946BEY Dual N-Channel 60-V D-S SI4946EY-T1 Si4946EY Contextual Info: Specification Comparison Vishay Siliconix Si4946BEY vs. Si4946EY Description: Dual N-Channel, 60 V D-S MOSFET Package: SO-8 Pin Out: Identical Part Number Replacements: Si4946BEY-T1-E3 Replaces Si4946EY-T1-E3 Si4946BEY-T1 Replaces Si4946EY-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted	Original	Si4946BEY Si4946EY Si4946BEY-T1-E3 Si4946EY-T1-E3 Si4946BEY-T1 Si4946EY-T1 74067 Dual N-Channel 60-V D-S	PDF
si4946 Abstract: Dual Gate mosfet spice Si4946EY Contextual Info: SPICE Device Model Si4946EY Vishay Siliconix Dual N-Channel 50-V D-S Dual MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4946EY S-52575Rev. 02-Jan-06 si4946 Dual Gate mosfet spice	PDF
Si4946BEY Contextual Info: Si4946BEY Vishay Siliconix Dual N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.041 at VGS = 10 V 6.5 0.052 at VGS = 4.5 V 5.8 Qg (Typ.) 9.2 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si4946BEY 2002/95/EC Si4946BEY-T1-E3 Si4946BEY-T1-GE3 11-Mar-11	PDF
Si4946EY Contextual Info: SPICE Device Model Si4946EY Vishay Siliconix Dual N-Channel 50-V D-S Dual MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4946EY 18-Jul-08	PDF
a244v Abstract: Si4946EY Contextual Info: Si4946EY Dual N-Channel 60-V, 175_C Rated MOSFET Product Summary VDS V 60 rDS(on) (W) ID (A) 0.055 @ VGS = 10 V "4.5 0.075 @ VGS = 4.5 V "3.9 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)	Original	Si4946EY S-49520--Rev. 18-Dec-96 a244v	PDF
Si4946BEY-T1-E3 Abstract: SI4946BEY-T1-GE3 Si4946BEY Contextual Info: Si4946BEY Vishay Siliconix Dual N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.041 at VGS = 10 V 6.5 0.052 at VGS = 4.5 V 5.8 Qg (Typ.) 9.2 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si4946BEY 2002/95/EC Si4946BEY-T1-E3 Si4946BEY-T1-GE3 18-Jul-08	PDF
Contextual Info: Si4946BEY Vishay Siliconix Dual N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.041 at VGS = 10 V 6.5 0.052 at VGS = 4.5 V 5.8 Qg (Typ.) 9.2 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si4946BEY 2002/95/EC Si4946BEY-T1-E3 Si4946BEY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Si4946EY-T1 Abstract: Si4946EY Contextual Info: Si4946EY Vishay Siliconix Dual N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.055 @ VGS = 10 V 4.5 0.075 @ VGS = 4.5 V 3.9 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View Ordering Information: Si4946EY Si4946EY-T1 (with Tape and Reel)	Original	Si4946EY Si4946EY-T1 S-03950--Rev. 26-May-03	PDF
Si4946BEY Contextual Info: Si4946BEY Vishay Siliconix New Product Dual N-Channel 60-V D-S 175 _C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.041 @ VGS = 10 V 6.5 0.052 @ VGS = 4.5 V 5.8 Qg (Typ) 9 2 nC 9.2 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature	Original	Si4946BEY Si4946BEY-T1--E3 08-Apr-05	PDF
Contextual Info: Si4946EY Siliconix Dual N-Channel 60-V D-S , 175_C MOSFET Product Summary VDS (V) 60 rDS(on) (W) ID (A) 0.055 @ VGS = 10 V "4.5 0.075 @ VGS = 4.5 V "3.9 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)	Original	Si4946EY S-57253--Rev. 24-Feb-98	PDF
si4649 Abstract: Si4946EY Contextual Info: SPICE Device Model Si4946EY Vishay Siliconix Dual N-Channel 50-V D-S Dual MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4946EY 05-Nov-99 si4649	PDF

Contextual Info: Si4946BEY Vishay Siliconix Dual N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.041 at VGS = 10 V 6.5 0.052 at VGS = 4.5 V 5.8 Qg (Typ.) 9.2 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si4946BEY 2002/95/EC Si4946BEY-T1-E3 Si4946BEY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Si4946EY Contextual Info: Si4946EY Dual N-Channel 60-V, 175_C Rated MOSFET Product Summary VDS V 60 rDS(on) (W) ID (A) 0.055 @ VGS = 10 V "4.5 0.075 @ VGS = 4.5 V "3.9 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)	Original	Si4946EY S-49520--Rev. 18-Dec-96	PDF
Si4946EY Abstract: Si4946EY-T1 Contextual Info: Si4946EY Vishay Siliconix Dual N-Channel 60-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.055 @ VGS = 10 V 4.5 0.075 @ VGS = 4.5 V 3.9 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested SO-8 Pb-free	Original	Si4946EY Si4946EY-T1 Si4946EY--E3 Si4946EY-T1--E3 18-Jul-08	PDF
SI4946BEY Abstract: Si4946BEY-T1-E3 Contextual Info: Si4946BEY Vishay Siliconix New Product Dual N-Channel 60-V D-S 175 _C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.041 @ VGS = 10 V 6.5 0.052 @ VGS = 4.5 V 5.8 Qg (Typ) 9 2 nC 9.2 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature	Original	Si4946BEY Si4946BEY-T1--E3 S-51013--Rev. 23-May-05 Si4946BEY-T1-E3	PDF
Si4946EY Contextual Info: Si4946EY Vishay Siliconix Dual N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.055 @ VGS = 10 V "4.5 0.075 @ VGS = 4.5 V "3.9 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	Si4946EY S-57253--Rev. 24-Feb-98	PDF
Si4946EY Contextual Info: Si4946EY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 60 rDS(on) (W) ID (A) 0.055 @ VGS = 10 V "4.5 0.075 @ VGS = 4.5 V "3.9 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)	Original	Si4946EY S-45854--Rev. 06-Nov-95	PDF
Contextual Info: Si4946BEY Vishay Siliconix Dual N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.041 at VGS = 10 V 6.5 0.052 at VGS = 4.5 V 5.8 Qg (Typ.) 9.2 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si4946BEY 2002/95/EC Si4946BEY-T1-E3 Si4946BEY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
S-51132 Abstract: Si4946BEY Contextual Info: SPICE Device Model Si4946BEY Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4946BEY to-10-V 18-Jul-08 S-51132	PDF
Si4946BEY-T1-E3 Contextual Info: Si4946BEY Vishay Siliconix New Product Dual N-Channel 60-V D-S 175 _C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.041 @ VGS = 10 V 6.5 0.052 @ VGS = 4.5 V 5.8 Qg (Typ) 9 2 nC 9.2 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature	Original	Si4946BEY Si4946BEY-T1--E3 18-Jul-08 Si4946BEY-T1-E3	PDF
70157 Abstract: 5-0524 Contextual Info: Si4946EY Vishay Siliconix Dual N-Channel 60-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.055 @ VGS = 10 V 4.5 0.075 @ VGS = 4.5 V 3.9 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested SO-8 Pb-free	Original	Si4946EY Si4946EY-T1 Si4946EY--E3 Si4946EY-T1--E3 S-50524--Rev. 28-Mar-05 70157 5-0524	PDF

SI4946 Search Results

SI4946 Datasheets (14)

SI4946 Price and Stock

Vishay Siliconix SI4946BEY-T1-GE3

Vishay Siliconix SI4946CDY-T1-GE3

Vishay Siliconix SI4946BEY-T1-E3

Vishay Intertechnologies SI4946BEY-T1-E3

Vishay Intertechnologies SI4946CDY-T1-GE3

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