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Navitas Semiconductor GB20SHT12-CAL SiC Schottky Diodes SiC1200V 20A 225DegC AI Top and Au Bottom
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	GB20SHT12-CAL					1 - 10 - 100 $164.92 1000 $164.92 10000 $164.92	Get Quote
Onlinecomponents.com	GB20SHT12-CAL					1 - 10 - 100 $156.697 1000 $156.697 10000 $156.697	Buy Now
Navitas Semiconductor GB20SHT12-CAU SiC Schottky Diodes SiC1200V 20A 225DegC Au Top and Au Bottom
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	GB20SHT12-CAU					1 - 10 - 100 $234.08 1000 $234.08 10000 $234.08	Get Quote
Onlinecomponents.com	GB20SHT12-CAU					1 - 10 - 100 $222.408 1000 $222.408 10000 $222.408	Buy Now

GB20SHT12 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Die Datasheet High Temperature Silicon Carbide Power Schottky Diode GB20SHT12-CAL VRRM o IF @ 25 C QC = = = 1200 V 30 A 58 nC Features •        1200 V Schottky rectifier 250 °C maximum operating temperature Zero reverse recovery charge	Original	GB20SHT12-CAL Mil-PRF-19500 GB20SHT12 74E-13 68E-5 15E-09 00E-10 00E-03	PDF
GB20SHT12-CAL SPICE Abstract: high-temperature-sic-bare-die Contextual Info: Die Datasheet GB20SHT12-CAL SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB20SHT12-CAL. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * *	Original	GB20SHT12-CAL GB20SHT12-CAL. 05-SEP-2013 GB20SATHODE GB20SHT12 74E-13 68E-5 15E-09 GB20SHT12-CAL SPICE high-temperature-sic-bare-die	PDF
Contextual Info: Die Datasheet High Temperature Silicon Carbide Power Schottky Diode GB20SHT12-CAU VRRM o IF @ 25 C QC = = = 1200 V 30 A 58 nC Features •        1200 V Schottky rectifier 250 °C maximum operating temperature Zero reverse recovery charge	Original	GB20SHT12-CAU Mil-PRF-19500 GB20SHT12 74E-13 68E-5 15E-09 00E-10 00E-03	PDF
Contextual Info: Electrical Datasheet* GB20SHT12-CAL Silicon Carbide Power Schottky Diode Chip Features •       1200 V Schottky rectifier 250 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability	Original	GB20SHT12-CAL GB20SHT12 74E-13 68E-5 15E-09 00E-10 00E-03	PDF
Contextual Info: Electrical Datasheet* GB20SHT12-CAU Silicon Carbide Power Schottky Diode Chip Features •       1200 V Schottky rectifier 250 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability	Original	GB20SHT12-CAU GB20SHT12 74E-13 68E-5 15E-09 00E-10 00E-03	PDF
GB20SHT12-CAU SPICE Abstract: high-temperature-sic-bare-die Contextual Info: Die Datasheet GB20SHT12-CAU SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB20SHT12-CAU. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * *	Original	GB20SHT12-CAU GB20SHT12-CAU. 05-SEP-2013 GB20SATHODE GB20SHT12 74E-13 68E-5 15E-09 GB20SHT12-CAU SPICE high-temperature-sic-bare-die	PDF