GB75SA120UP Search Results
GB75SA120UP Price and Stock
Vishay Semiconductors VS-GB75SA120UPIGBT MODULE 1200V 658W SOT227 |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
VS-GB75SA120UP | Bulk | 180 |
|
Buy Now | ||||||
GB75SA120UP Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
VS-GB75SA120UPContextual Info: Not Available for New Designs, Use VS-GB90SA120U VS-GB75SA120UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • • • • • • • • SOT-227 PRODUCT SUMMARY BENEFITS VCES 1200 V IC DC 75 A at 95 °C |
Original |
VS-GB90SA120U VS-GB75SA120UP OT-227 OT-227 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 VS-GB75SA120UP | |
GB75SA120UPContextual Info: GB75SA120UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • • • • • • • • SOT-227 NPT Generation V IGBT technology Square RBSOA Positive VCE(on) temperature coefficient Fully isolated package |
Original |
GB75SA120UP 2002/95/EC OT-227 OT-227 11-Mar-11 GB75SA120UP | |
GB75SA120UPContextual Info: GB75SA120UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • • • • • • • • SOT-227 NPT Generation V IGBT technology Square RBSOA Positive VCE(on) temperature coefficient Fully isolated package |
Original |
GB75SA120UP 2002/95/EC OT-227 OT-227 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 GB75SA120UP | |
ultrafast igbt
Abstract: GB75SA120UP igbt for induction heating ic c5027 induction heating technical information
|
Original |
GB75SA120UP OT-227 2002/95/EC OT-227 18-Jul-08 ultrafast igbt GB75SA120UP igbt for induction heating ic c5027 induction heating technical information | |
GB75SA120UPContextual Info: GB75SA120UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • • • • • • • • SOT-227 NPT Generation V IGBT technology Square RBSOA Positive VCE(on) temperature coefficient Fully isolated package |
Original |
GB75SA120UP OT-227 2002/95/EC OT-227 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 GB75SA120UP | |
GB75SA120UPContextual Info: GB75SA120UP Vishay High Power Products Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • • • • • • • • SOT-227 NPT Generation V IGBT technology Square RBSOA Positive VCE(on) temperature coefficient Fully isolated package Speed 8 kHz to 60 kHz |
Original |
GB75SA120UP 2002/95/EC OT-227 OT-227 11-Mar-11 GB75SA120UP | |
VS-GB75SA120UPContextual Info: Not recommended for new design, use VS-GB90SA120U VS-GB75SA120UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • • • • • • • • SOT-227 PRODUCT SUMMARY BENEFITS VCES 1200 V IC DC 75 A at 95 °C |
Original |
VS-GB90SA120U VS-GB75SA120UP OT-227 OT-227 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 VS-GB75SA120UP |