GC 380 Search Results

paint msds

Abstract: msds mgm070a A 27611 milk of lime LD50 LD502 msds paint Boric Acid
Contextual Info: MATERIAL SAFETY DATA SHEET SECTION 1: CHEMICAL PRODUCT AND COMPANY IDENTIFICATION PRODUCT: GC Adhesive November 28, 2005 Vishay Micro-Measurements Post Office Box 27777 Raleigh, NC 27611 MSDS # MGM070A 919-365-3800 CHEMTREC 1-800-424-9300 U.S. 703-527-3887 (Outside U.S.)

gDDR2-800

Contextual Info: 256M gDDR2 SDRAM K4N56163QF-GC 256Mbit gDDR2 SDRAM Revision 1.8 May 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

K4J55323QF-GC20

Abstract: K4J55323QF-GC K4J55323QF-GC12 K4J55323QF-GC14 gddr3 Gl WL02 A/SAMSUNG GDDR3
Contextual Info: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM Revision 1.8 April 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

K4D553238F-VC

Abstract: K4D553238F K4D553238F-GC K4D553238F-GC2A K4D553238F-GC33 K4D553238F-GC36
Contextual Info: 256M GDDR SDRAM K4D553238F-GC 256Mbit GDDR SDRAM Revision 1.3 March 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

K4N56163QF-GC37

Abstract: K4N56163QF-ZC gddr5 JESD51-2 K4N56163QF-GC K4N56163QF-GC25 K4N56163QF-GC30
Contextual Info: 256M gDDR2 SDRAM K4N56163QF-GC 256Mbit gDDR2 SDRAM Revision 1.6 April 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Contextual Info: 256M gDDR2 SDRAM K4N56163QF-GC 256Mbit gDDR2 SDRAM Revision 2.0 October 2005 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Contextual Info: 256M gDDR2 SDRAM K4N56163QF-GC 256Mbit gDDR2 SDRAM 4M x 16Bit x 4 Banks gDDR2 SDRAM with Differential Data Strobe and DLL Revision 1.5 March 2005 Samsung Electronics reserves the right to change products or specification without notice. - 1 - Rev 1.5 Mar. 2005

Contextual Info: 256M gDDR2 SDRAM K4N56163QF-GC 256Mbit gDDR2 SDRAM 4M x 16Bit x 4 Banks gDDR2 SDRAM with Differential Data Strobe and DLL Revision 1.3 January 2005 Samsung Electronics reserves the right to change products or specification without notice. - 1 - Rev 1.3 Jan. 2005

burndy Y35 Hypress owner manual

Abstract: burndy Y39 Hypress owner manual Burndy Y35 hypress burndy Y35 burndy Y750 UL-467 Penetrox A Electric Joint Compound Y750 REVOLVER HYPRESS GBM STEP MOTOR burndy Y750HS user manual
Contextual Info: GC-08 www.burndy.com CALL 1-800-346-4175 FOR YOUR LOCAL SALES REPRESENTATIVE BURNDY PRODUCTS BURNDY PRODUCTS Grounding Catalog Experience. Technology. Answers. Customer Service Dept. 7 Aviation Park Drive Londonderry, NH 03053 1-800-346-4175 Canada 1-800-361-6975 Quebec

Contextual Info: 128M DDR SDRAM K4D263238A-GC 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.5 December 2001 Samsung Electronics reserves the right to change products or specification without notice.

Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Drawing updated to reflect current requirements. -sld 04-03-05 Raymond Monnin B Added footnote 1 to Table II, under group C end-point electricals. Update drawing paragraphs. gc 12-08-01 Charles F. Saffle

Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Drawing updated to reflect current requirements. -sld 04-03-08 Raymond Monnin B Added footnote 1 to table II, under group C end-point electricals. Update drawing paragraphs. -gc 12-11-08 Charles F. Saffle

K4D263238A-GC36

Abstract: K4D263238A-GC40 K4D263238A-GC45 K4D26323RA-GC36 16baa
Contextual Info: 128M DDR SDRAM K4D263238A-GC 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 2.0 January 2003 Samsung Electronics reserves the right to change products or specification without notice.

LP SDRAM

Abstract: K4D55323QF-GC K4D55323QF-GC2A GDDR
Contextual Info: 256M GDDR SDRAM K4D55323QF-GC 256Mbit GDDR SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe 144-Ball FBGA Revision 1.1 May 2004 Samsung Electronics reserves the right to change products or specification without notice.

Contextual Info: 256M GDDR SDRAM K4D55323QF-GC 256Mbit GDDR SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe 144-Ball FBGA Revision 1.0 March 2004 Samsung Electronics reserves the right to change products or specification without notice.

GC0251KX

Abstract: GF0381MP-1 GC0401L 11791 GC0251K GC0361 GC0251P GC0251KX-1 GC0401CL GC0281
Contextual Info: NOTEBOOK COMPUTER SPEAKER & IT APPLICATION SPEAKER » 7 ; | ¡211 JEÜÊ GC0251P ii GC0251K GC0351M-3 GC0301K GC0351T GC0351P-3 GC0401T GC.0351N GC0351N-1 <C3T:>)Ì GC0351K GC0401KM GC0401SPN GC0351P GC0351P-I GC0401S GC0401SP-1 GG0401L MODEL S IZ E IMP NO.

K4D263238A-GC36

Abstract: K4D263238A-GC40 K4D263238A-GC45 K4D26323RA-GC36
Contextual Info: 128M DDR SDRAM K4D263238A-GC 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.9 July 2002 Samsung Electronics reserves the right to change products or specification without notice.

K4D26323QG-GC22

Abstract: K4D26323QG-GC2A K4D26323QGGC2
Contextual Info: 128M GDDR SDRAM K4D26323QG-GC 128Mbit GDDR SDRAM 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.0 June 2004 Samsung Electronics reserves the right to change products or specification without notice.

DDR2 x32

Abstract: GC14 K4J55323QF-GC K4J55323QF-GC12 K4J55323QF-GC14 K4J55323QF-GC16 t8n 800 ELPIDA DDR User
Contextual Info: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe and DLL 144 - Ball FBGA Revision 1.0 January 2004 Samsung Electronics reserves the right to change products or specification without notice.

Contextual Info: 256M GDDR SDRAM K4D553238F-GC 256Mbit GDDR SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.3 March 2005 Samsung Electronics reserves the right to change products or specification without notice.

Contextual Info: 256M GDDR SDRAM K4D553238F-GC 256Mbit GDDR SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.2 February 2005 Samsung Electronics reserves the right to change products or specification without notice.

DDR2 x32

Abstract: GDDR3 SDRAM 256Mb K4J55323QF-GC K4J55323QF-GC12 K4J55323QF-GC14 MICRON gddr3 K4J55323QF-GC20 Gl WL02 Elpida GDDR3 T12N
Contextual Info: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe and DLL 144 - Ball FBGA Revision 1.7 January 2005 Samsung Electronics reserves the right to change products or specification without notice.

Contextual Info: P Adhesive Micro-Measurements Strain Gage Adhesive OTHER ACCESSORIES USED IN A  P ADHESIVE INSTALLATION: • CSM Degreaser or GC-6 Isopropyl Alcohol  Silicon-Carbide Paper  M-Prep Conditioner A  M-Prep Neutralizer 5A  CSP-1 Cotton Swabs  GSP-1 Gauze Sponges

Radial

Contextual Info: CD 269 PH Series 4 000h at 125°C • High Reliability at High Temperature · Automotive · Professional Long-Life Applications CD 11GL GL higher voltage lower ESR CD 287 GC CD 269 PH 125°C CD 269L HL longer life Item Characteristics Operating Temperature Range °C