T12N Search Results

KL21

Abstract: T12N
Contextual Info: EUPEC SEE T> 3 4 0 3 2* 1 7 GQGGbm S3Ö H U P E C T12N T 'Z J 5 -IS TVpenrelhe/iype range T 12 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Vrrm Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Effektiver Durchlaßstrom

Contextual Info: EUPEC SEE T> 3 4 0 3 2* 1 7 GQGGbm S3Ö H U P E C T12N T 'Z J 5 - IS TVpenrelhe/iype range T 12 N Elektrische Eigenschaften Electrical properties Vdrm , Höchstzulässige Werte Vrrm Periodische Vorwärts- und Rückwärts-S pitzensperrspannung Maximum permissible values

T12N

Contextual Info: A E G - A K T I ENGES EL LSCH AF T ÔIC D • DGSTHIS OGObDSB 4 ■ AEGG T12N Typenreihe/Type ränge T12N 400 E lek trisch e E ig en sch a ften E lectrical properties 600 H ö ch stz u lä s s ig e W erte M axim um p erm issib le va lu e s U d rm , U b r m Periodische Vorwärts-und

T12N

Abstract: AEG T 51 N 1200 aeg thyristors
Contextual Info: 0029426 A E G CQRP fll DE I OGSTMSh D00bGS3 0 | T 12 N Typenreihe/Type ränge T12N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte U dhm, Ubrh Periodische Vorwärts- und 400 600 700 800 900 1000 1100 1200 Maximum permissible values

T12N

Abstract: 1256C A-04 DIN40040
Contextual Info: TELEFUNKEN ELECTRONIC filC » • i H S D M b OOObOSB 7 ■ AL66 7"- T12N T yp enrelhe/Typ e range T12N Elektrische Eigenschaften Electrical properties H öchstzulässige W erte U drmi U rrh Periodische Vorwärts- und repetitive peak forward off-state Rückwärts-Spitzensperrspannung

S5 100 B112 MT RELAY

Abstract: CK 66 UL 94V-0 LCD sh 0357 94v-0 c225t F8212 panduit standoff RF based remote control robot circuit diagram of incubator D1148 burndy Y35 crimping tool manual
Contextual Info: ELECTRICAL SOLUTIONS A. System Overview Click on the logo above to go to www.panduit.com up to date product information find a local distributor technical information Section Index B1. Cable Ties A. System Overview B2. Cable Accessories B. Bundle B3. Stainless

Contextual Info: NL Series — SMD Ferrite Wound Inductor These revolutionary, highly reliable wound chip inductors for automatic mounting, have been developed in response to the trend toward high density in electronic equipment. With metal terminals and a body of heat resistant resin, these

t12n10

Abstract: NTD12N10 12n10 AN569 NTD12N10T4 SMD310 12n10 die
Contextual Info: NTD12N10 Preferred Device Advance Information Power MOSFET 12 Amps, 100 Volts N–Channel Enhancement–Mode DPAK http://onsemi.com Features • Source–to–Drain Diode Recovery Time Comparable to a • • • 12 AMPERES 100 VOLTS 165 mΩ @ VGS = 10 V

SAE AS33671

Abstract: stk 5340 MS3367-4-9 MS90387-1 AS23190 MS3367-4-4 B-1108 RAMH-S10-D Cinch 2 fach QPL-AS23190-2
Contextual Info: E LEKTROINSTALLATIONS L ÖSUNGEN A KABELBINDER PANDUIT bietet die umfangreichste Auswahl an Kabelbinderformen, -größen, -materialien und -farben für die verschiedensten Anforderungen unserer Kunden. Mit Kabelbindern von PANDUIT werden unzählige Anwendungen im Innen- und Außenbereich sowie unter schwierigen

SAE AS33671

Abstract: SAE AS33681 AS23190 AS33681 AS33671 mixer ems 505 MS90387-1 SAE AS23190 POLYOL foam density 94v-0 lcd display
Contextual Info: Cable Ties/Wiring Accessories Catalog—WW-CTCB03 replaces SA-101N275C-WC Table of Contents Cable Ties and Installation Tooling Available Styles PAN-TY Locking Cable Ties, Locking Lashing Ties, Releasable Ties, Releasable Lashing Ties, Clamp Ties, Marker and Flag Ties, Winged Push Mount Ties, Push Mount Ties,

T08N

Abstract: UT01N t03n n21p UT03N n25p n20p AD8151 T09N N31P
Contextual Info: PRELIMINARY TECHNICAL DATA TM 33 x 17, 3.2Gb/s Digital Crosspoint Switch a s tre a m D 7 A 5 F irst Ran k 1 7 x 7 b it L a tc h Se co n d Ra n k 1 7 x 7 b it L a tc h Input Decoders RE INN CS Output Address Decoder FEATURES Low Cost 33 x 17, Fully Differential, Nonblocking Array

Contextual Info: 256M GDDR3 SDRAM K4J55323QG 256Mbit GDDR3 SDRAM Revision 1.2 March 2006 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

timing controller SHART

Abstract: T21N K4U52324Q SAMSUNG GDDR4 K4U52324QE-BC09 GDDR4
Contextual Info: 512M GDDR4 SGRAM K4U52324QE 512Mbit GDDR4 SGRAM 2M x 32Bit x 8 Banks Graphic Double Data Rate 4 Synchronous DRAM with Uni-directional Data Strobe and DLL 136Ball FBGA Revision 1.0 June 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

K4J10324KE-HC1A

Abstract: K4J10324KE-HC14 T21N K4J10324KE k4j10324 K4J10324KE-HC12
Contextual Info: Target 1Gb GDDR3 SDRAM K4J10324KE 1Gbit GDDR3 SDRAM 136FBGA with Halogen-Free & Lead-Free RoHS compliant Revision 0.1 December 2008 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

d marking code dpak n10

Abstract: NTD12N10 369D AN569 NTD12N10T4 NTD12N10T4G T12N10
Contextual Info: NTD12N10 Preferred Device Power MOSFET 12 Amps, 100 Volts N−Channel Enhancement−Mode DPAK Features • Pb−Free Package is Available • Source−to−Drain Diode Recovery Time Comparable to a • • • http://onsemi.com Discrete Fast Recovery Diode

DDR2 x32

Abstract: GDDR3 SDRAM 256Mb K4J55323QF-GC K4J55323QF-GC12 K4J55323QF-GC14 MICRON gddr3 K4J55323QF-GC20 Gl WL02 Elpida GDDR3 T12N
Contextual Info: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe and DLL 144 - Ball FBGA Revision 1.7 January 2005 Samsung Electronics reserves the right to change products or specification without notice.

WL 系列

Contextual Info: TOKEN TRWL 貼片開放式繞線超薄高電流電感 貼片繞線電感 超薄高電流電感 產品簡介 德鍵電子生產的繞線貼片電感 - 採用高 共振頻率的陶瓷體線繞結構，超小體積 電感，可提供較高的 Q 值超薄型，

marking n10 fet

Abstract: NTD12N10
Contextual Info: NTD12N10 Preferred Device Power MOSFET 12 Amps, 100 Volts N−Channel Enhancement−Mode DPAK Features • Source−to−Drain Diode Recovery Time Comparable to a • • • http://onsemi.com Discrete Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature

MICRON gddr3

Abstract: GDDR3 SDRAM 256Mb gddr3 FBGA DDR3 x32 35w4 MT44H8M32F2FW-16 32x4 BA1T10 marking R810
Contextual Info: ADVANCE‡ 256Mb: x32 GDDR3 SDRAM GRAPHICS DDR3 SDRAM MT44H8M32 – 2 MEG x 32 x 4 BANKS For the latest data sheet, please refer to the Micron Web site: www.micron.com/datasheets Features • • • • • • • • • • • • • • • • •

T103 0830

Abstract: t1n6 WL02 T WL05 WL05-T3N0 T22N 900 T3N6 WL02 Woofer 801 WL06
Contextual Info: Wire Wound Chip Inductor－WL Series Feature －Wire wound Ceramic Construction Provide High SRFs －Ultra-compact Inductors Provide Exceptional Q Values －Low profile , High Current are Available －Miniature SMD Chip Inductor for Fully Automated Assembly

Contextual Info: 22 ChipInductors-1008HTSeries 2520 T h e s e lo w p ro file in d u c to rs a re 4 0 % th in n e r th a n o u r c o n v e n tio n a l 1 0 0 8 b o d y s iz e s . T h e y fe a tu re s ta n d a rd in d u c ta n c e to le ra n c e s o f 5 -1 0 % , h ig h S R F s a n d v e ry h ig h Q.

aeg t15

Abstract: N800COB TAG740-200.800 ST018S08P bty91 800r S2014NH SKT16F08DU 1N800COC T12N800COB t7n800
Contextual Info: SILICON CONTROLLED RECTIFIERS Item Number Part Number Manufacturer VDRM V IT Max (A) ITSM (A) lOT Max (A) VOT Max (V) IDRM dv/dt (A) (V/UB) to Operating Temperature Max (8) (OC) Min Max Package Style SeRs, VDRM >= 800 V (Co nt' d) 5 10 15 20 T10N800UOF BT152-800

T19FR-C

Abstract: T25N...C T100N-C t38f-c0 T25R C20 diode, TO T100n T19N-C T19N-C0 T25FR-C
Contextual Info: Spiral Wrapping Ordering Information — Spiral Wrapping B A U.L. Recognized T Ordering Information — Spiral Wrapping Part Number T12F-C T19F-C T25F-X T25F-C T25F-C1 T25F-C10 T25F-C16 T25F-C2 T25F-C3 T25F-C4 T25F-C5 T25F-C6 T25F-C7 T25F-C8 T38F-C T50F-X

SQFP-48

Abstract: T6N 700 UCC5638
Contextual Info: SiP5638 New Product Vishay Siliconix 15-Line SCSI Bus Terminators D Pin Compatible with UCC5638 D Lead Pb -Free SQFP-48 Package FEATURES D Auto Selection of S/E or LVD SCSI Termination D 2.7-V to 5.25-V TERMPWR Range D Meets SCSI-1, SCSI-2, SPI-2 (ULTRA-2), SPI-3