GC744 Search Results

Contextual Info: STP5NC50 STP5NC50FP N - CHANNEL 500V -1.3 Q. - 5.5A TO-220/TO-220FP _ PowerMESH MOSFET P R ELIM IN ARY DATA TYPE S TP5N C 50 STP5NC 50FP • . . . . V dss RDS on Id 500 V 500 V < 1 .5 Q. < 1 .5 Q. 5.5 A 5.5 A TYPICAL RDS(on) = 1.3

IRFBC30

Abstract: DC/AC to DC smps circuit diagram static charge meter powermesh mosfet
Contextual Info: IRFBC30 N - CHANNEL 600V -1.8 Í2 - 3.6A - TO-220 PowerMESH II MOSFET TYPE V IR F B C 3 0 • . . . . d s s 600 V R d < S o 2 .2 Id ii Q. 3.6 A TYPICAL R D S (o n ) = 1.8 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

Contextual Info: STP5NB60 STP5NB60FP N - CHANNEL 600V - 1 ,8£2 - 5A - TO-220/TO-220FP PowerMESH MOSFET TYPE V STP5NB 60 STP5NB60FP • . . . . dss 60 0 V 60 0 V R d Id S o i i < 2.0 Q. < 2.0 Q. 5 A 3 A TYPICAL RDS(on) = 1 -8 £1 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

powermesh mosfet

Abstract: DC/AC to DC smps circuit diagram STB5NB60 e1218 gc744 static energy meter schematic
Contextual Info: STB5NB60 N - CHANNEL 600V - 1 .8iî - 5A - l2PAK/D2PAK PowerMESH MOSFET TYPE V STB5NB 60 • . . . . dss 60 0 V R d S o i i < 2.0 Q. Id 5 A TYPICAL RDS(on) = 1.8 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED

Contextual Info: STP4NC60 STP4NC60FP N-CHANNEL 600V-1.8 iì -4.2 A TO-220/TO-220FP _ PowerMESH II MOSFET PRELIMINARY DATA TYPE S TP4N C 60 STP4NC 60FP • . . . . V dss RDS on Id 600 V 600 V < 2 .2 Q. < 2 .2 Q. 4.2 A 4.2 A TYPICAL RDS(on) = 1.8 EXTREMELY HIGH dv/dt CAPABILITY

Diode B60

Abstract: 5NB60FP B60FP
Contextual Info: SGS-THOMSON !LiM@iO gS STP5NB60 STP5NB60FP N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET TYPE STP5N B60 S TP5N B60FP • . . . . V dss R D S (o n Id 600 V 600 V < 2.0 a < 2.0 a 5 A 3 A TYPICAL RDS(on) = 1.8 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED