GE 205A Search Results

Contextual Info: PCL-205A1SP,000 Product Details Mid-Ran ge PC Board Re lays Previous 1 2 3 4 [5] . 20 Next Alway s EU RoHS compliant but not ELV Compliant Statement of Compliance Quick Links Check Pricing & Availability Search for Tooling Product Feature Selector Compare Products

TIC 1160

Abstract: TIC 26M
Contextual Info: Product specification Philips Semiconductors-Signetlcs RF Communications Producís NE/SA/SE5205A Wide-band high-frequency amplifier DESCRIPTION S O p a cka ge to fu rth e r re duce parasitic T he N E /S A /S E 5 205A fa m ily o f w id e b a n d effects.

IRFF222

Abstract: IRFF223
Contextual Info: IFUT HELD EFFECT POWER TRANSISTOR IRFF222,223 3 AMPERES 200,150 VOLTS RDS ON = 1 .2 il P relim inary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

FRL9430

Contextual Info: HARRIS SEMICON] SECTOR MDE D fgi H A R R I S • RCA • • GE 43D2271 D033731 □ • HAS OBJECTIVE S E M I C O N D U C T O R HARRIS H —— INTERSIL FRL9430D 1A ,-5 0 0 V RDS on)=7.60n This Objective Data Sheet Represents the Proposed Device Performance.

1N3716

Abstract: 1N3717 1N3712 TD-26EA 1N3715 TD-205A 1N3713 1N3714 TD-253A 1N3718
Contextual Info: TUNNEL DIODES GENERAL PURPOSE For Switching, Oscillators, Am plifiers, Converter Circuits and Threshold Detectors. GE TY P E + 1 0 0 °C O peration TD-1 -|-100o C S u b m in ia tu re P ack age TD -2 0 0 <2> Ip P eak P oint C u rre n t mA lv V a lle y Point

2N6794

Abstract: relay GE 469
Contextual Info: 2N6794 £2 HARRIS N -C h an n e l Enhancem ent-M ode Pow er M O S Field-Effect Transistor August 1991 P a ck a ge Features T0-205AF BOTTOM VIEW • 1.5A, 500V * rD S o n = 3 n • S O A is P o w e r-D issip a tio n Limited SO U RCE _ G A T E • N a n o s e c o n d Sw itch in g S p e e d s

Contextual Info: MITEL SV15.F Fast Recovery Diode SEMICONDUCTOR Supersedes January 1996 version, DS4209 - 2.1 DS4209 - 2.2 APPLICATIONS March 1998 KEY PARAMETERS v RRM 1600V 205A Jf AV 3000A FSM 35|lC Q r • Induction Heating. ■ A.C. M otor Drives. ■ S nubber Diode.

mosfet 4456

Abstract: 1RFF312R 4456 mosfet LT 312r 1RFF312
Contextual Info: 3 ] H A R R I S IRFF3 1 0 /3 1 1 /3 1 2 / 3 1 3 IRFF3 1 OR/3 1 1 R/3 1 2 R/3 1 3 R N -Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package TQ-205AF • 1.35A and 1.15A, 350V - 400V • rDS on = 3-Bfl and 5 .0 fl • Single Pulse Avalanche Energy Rated*

VN46AFD

Abstract: 6178 vn0606m
Contextual Info: VNDQ06 N-Channel Enhancement-Mode MOSFETs TYPE PACKAGE Single TO-39 TO-205AD • 2N6659, 2N6660 Single TO-220SD • VN46AFD, AN66AFD Single TO-237 • VN0606M Single TO-92 (TO-226AA) • TN0601L Quad 14-Pin Plastic • VQ1004J, TQ1004J Quad 14-Pin Dual-ln-Line

2N3609

Abstract: 2N3633 2N3520 2N3618 motorola 2SC1330 transitron 2N3543 KT503A LOW-POWER SILICON NPN 2N3625
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 BO 85 90 95 RN5816 RN5B16 RN5818 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 Manufacturer V(BR)CEO hFE Ie Max A fT (Hz) Cobo V(BR)CBO Max PD Max Derate

2N3633

Abstract: TIP300 2N3609 2SA8140 MH0816 BCX53 Rohm 2sb631 hitachi 2N3566 2N3519 sk3025
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 BCX53 MH0816 MH0818 MM4006 M0818 M0818 MM4031 ST4031 BCX53•6 ZTX552 BOW60 NS0204 2SA780AK BSV17·10 BSV17·10 BSV17·10 BSV17·6 BSV17·6 ~l,;X:';HU 35 40 45 50 2SA777 2SA777 B0418 2N6555 2SB1042M

2N2046

Abstract: 2N2546 centralab 2N2545 2N2045 2N2454 2N2044 mcr100-2 SF1B12 2N25
Contextual Info: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer 2N1847A Franel Corp Inti Rectfr IntlRect JA Semitronics St Semicon Trans-Tek 2N18478 Inti Device IntlRect IT Semitronics Texas Instr 2N1848 Franel Corp Inti Rectfr IntlRect JA Semicon Com Sensitron

Contextual Info: SV15.F MITEL Fast Recovery Diode SEMICONDUCTOR Supersedes January 1996 version, DS4209 - 2.1 DS4209 - 2.2 APPLICATIONS • KEY PARAMETERS V RRM 1600V 205A Jf AV 3000A FSM 35|iC Q r 3.2|is t rr Induction Heating. ■ A.C. Motor Drives. ■ Snubber Diode.

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

rca 2n2147

Abstract: 2N2207 2n2183 rca 2N2196 2N2214 2N2161 2N2222A motorola 2N2204 2n2162 2N2200
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 714 BFX69A BFX69A 2N1594 BCW94A 2SC366G 2N1644A 2N2192 2N2192A 2N2192B MPS650 CX904 CX904 2SC943 2SC943 2SC943 KT503B BCW90B BCW90B 2N731 Manufacturer

TO205AD

Contextual Info: SILICONIX INC 18 E D f 8 5 5 4 7 3 5 a 0 1 4 0 Sb S • VN1206B, VN1206D f X S ilic o n ix Z ■ in c o r p o r a te d N-Channel Enhancem ent-M ode M O S Transistors T PRODUCT SUMMARY PART NUMBER - TO-205AD TO-39 V(BR)DSS fDS(ON) (il) (V) Id (A) PACKAGE

2N5320

Abstract: 2N5321 2n6321 t35r Viper
Contextual Info: Boca Semiconductor Corp. CASE 79-04, STYLE 1 TO-39 TO-205AD M A X I M U M R A T IN G S Sym bol Rating 2N S320 2N5321 U nit Vdc Collector-Emitter Voltage V cEO 75 50 Collector-Base Voltage V cBO 100 75 V dc Em itter-Base Voltage vebo 7.0 5.0 V dc Ade B a se Current

Contextual Info: Tem ic 2N6851 Siliconix P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) -200 TDS(on) (ß ) 0.80 I d (A) -4.0 Parametric limits in accordance with M1L-S-19500I564 where applicable. T 0-205A F (TO-39) Ô D P-Channel MOSFF.T Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)

low range photo transistor

Abstract: frl9130 2E12 2N7308D 2N7308H 2N7308R
Contextual Info: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL9130 D, R, H 2N7308D, 2N7308R 2N7308H Radiation Hardened P-Channel Power MOSFETs November 1994 Features Package • 5A, -100V, RDS(on) = 0.550Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts

FRL230* harris

Abstract: 1E14 2E12 2N7275D 2N7275H 2N7275R FRL230 2N7275
Contextual Info: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL230 D, R, H 2N7275D, 2N7275R 2N7275H Radiation Hardened N-Channel Power MOSFETs November 1994 Features Package • 5A, 200V, RDS(on) = 0.500Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts

2N7308

Contextual Info: H A R R IS SEMI CONDUCTOR REGISTRATION PENDING Currently Available as FRL9130 D, R, H 2N7308D, 2N7308R 2N7308H Radiation Hardened P-Channel Power MOSFETs December 1992 Package Features • 5A, -100V, ROS(on) = 0.550n TO-205AF • Second Generation Rad Hard MOSFET Result* From New Design Concepts

2E12

Abstract: 2N7311D 2N7311H 2N7311R
Contextual Info: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL9230 D, R, H 2N7311D, 2N7311R 2N7311H Radiation Hardened P-Channel Power MOSFETs November 1994 Features Package • 3A, -200V, RDS(on) = 1.30Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts

1E14

Abstract: 2E12 2N7278D 2N7278H 2N7278R FRL234 Rad hard MOSFETS in Harris
Contextual Info: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL234 D, R, H 2N7278D, 2N7278R 2N7278H Radiation Hardened N-Channel Power MOSFETs November 1994 Features Package • 4A, 250V, RDS(on) = 0.700Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts

2E12

Abstract: 2N7281D 2N7281H 2N7281R 3E12 FRL430
Contextual Info: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL430 D, R, H 2N7281D, 2N7281R 2N7281H Radiation Hardened N-Channel Power MOSFETs November 1994 Features Package • 2A, 500V, RDS(on) = 2.50Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts