TO205AD Search Results

2N1132A

Abstract: 2N3495 2N5415 2n1132a transistor 2N3494 2N2800 2N4033 2N2904 2N2905 2N3467
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PN P TRANSISTOR TO-5/TO205AD/TO-39 PACKAGE DEVICE TYPE VcEO sus VOLTS Ic (max) AMPS TO-5 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3467 2N3468 2N3494 2N3495 2N3634 2N3635 2N3636 2N3637 2N3743

2N4033

Abstract: 2N3494 2N5415
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-5/TO205AD/TO-39 V cE O Ic PACKAGE DEVICE TYPE sus VOLTS (max) AMPS TO-5 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3467 2N3468 2N3494 2N3495 2N3634 2N3635 2N3636 2N3637

2N 3495

Abstract: 2N5415
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PINT TRANSISTOR TO-5/TO205AD/TO-39 PACKAG E D E V IC E T Y PE VcEO sus VOLTS Ic (m ax) AM PS TO -5 T O 205A D 2N 1132A 40 0.6 2N 2800 35 2N 2904 i T O -39 fn ^FE @ V V CE m in/m ax @ m A /V VcE(sat) @ I c/I b V @ m A /m A

2N4405

Abstract: 2N4890 2N4036 2N4929 2N4037 2N4404 2N4406 2N4407 2N4928 2N5022
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-5/TO205AD/TO-39 IC/ V c e min/max @ mA/V @ Ic/IB V @ mA/mA c <p P MHz 1.0 40/140@150/10 0.65@150/15 30 60 40 1.0 50/250@l 50/10 1.4@150/15 30 60 2N4404 80 1.0 40/120@ 150/5 0.2@150/15 10 200 2N4405

2N3019A

Abstract: 2N3114 2N5682 2N1613A 2N3501 JANTX transistor 2N3725 2N2219 JANTX 2N2219A 2N3020 transistor 2n2270
Contextual Info: N EW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-5/TO205AD/TO-39 TO-5 T0205A D hr iff ill Ic m ax A M PS 2N697 40h 0.8 40/120@ 150/10 2N1711 50h 1.0 2N 1613A 50h 2N1893 D E V IC E TY PE !/ ^ C E (sa t) @ If/Iß V @ m A/mA C<P P fx (M H z) 1.5@150/15

2N3019A

Abstract: 2N3501A
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-5/TO205AD/TO-39 PACKAGE DEVICE TYPE TO-5 T0205AD 2N697 2N1711 2N1613A 2N1893 2N2218A 2N2218AA 2N2219A 2N2219AA 2N2270 2N3019A 2N3020 2N3053A 2N3114 2N3300 2N3498A 2N3499A 2N3500A 2N3501A 2N3724 2N3725

2n4929

Abstract: 2N4405
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-5/TO205AD/TO-39 V ceo sus VOLTS Ic (max) AMPS ^FE @ IC/ VcE min/max @ mA/V VcE(wt) @ I c/I b V @ mA/mA C(P P ij (MHz) 2N4036 65 1.0 40/140@l 50/10 0.65@150/15 30 60 2N4037 40 1.0 50/250@l 50/10 1.4@150/15

Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-5/TO205AD/TO-39 @ W VCE min/max @ mA/V @ L/I b V @ mA/mA C<^ P fT MHz 1.0 40/140@150/10 0.65@150/15 30 60 40 1.0 50/250@l 50/10 1.4@150/15 30 60 2N4404 80 1.0 40/120@ 150/5 0.2@150/15 10 200 2N4405

Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-5/TO205AD/TO-39 T O -5 TO 205A D t ri T O -3 9 20 @ W ^C m in /m a x D E V IC E su s Ic (m a x ) TYPE VOLTS AM PS @ m A /V 2N 697 40h 0 .8 4 1 0 /1 2 0 @ 150/10 2N 1711 50h 1.0 2N 1613 50h 2N 1893

2N3421

Abstract: 2N3419 2N3420 1000C 2N3418 2N3418S 2N3419S 2N3420S
Contextual Info: TECHNICAL DATA 2N3418, S, JAN, TX, TXV 2N3419, S, JAN, TX, TXV 2N3420, S, JAN, TX, TXV 2N3421, S, JAN, TX, TXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/393 NPN SILICON MEDIUM-POWER TRANSISTOR 2N3418, 2N3419, 2N3420, 2N3421 TO- 5 MAXIMUM RATINGS Ratings

2N3868

Abstract: 2N3867S 2N3867 2N3868S JTX 2N3867 2N3868S JAN
Contextual Info: TECHNICAL DATA 2N3867 JAN, JTX, JTXV 2N3867S JAN, JTX, JTXV 2N3868 JAN, JTX, JTXV 2N3868S JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/350 PNP SILICON SWITCHING TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage

VP0300M

Abstract: VP0300L VP0300B-2 VP0300B VP0300
Contextual Info: VP0300 SERIES P-Channel Enhancement-Mode MOS Transistors HHSüSSÜS PRODUCT SUMMARY PART NUMBER V BR DSS (V) VP0300B -3 0 VP0300L VP0300M BOTTOM VIEW TO-39 (TO-205AD) •d "W (A) PACKAGE 2.5 -1 .2 5 TO -39 -3 0 2.5 -0 .3 2 TO -92 -3 0 2.5 - 0 .5 TO -237 1 SOURCE

2N6660

Abstract: s0437 2N6660 siliconix VQ1004J
Contextual Info: 2N6660, VQ1004J/P Vishay Siliconix N-Channel 60-V D-S Single and Quad MOSFETs PRODUCT SUMM ARY Part Number V (B R )D S S M i n ( V ) 2N6660 VQ1004J/P 60 r D S (o n) M a x ( Q ) V G S (th ) (V) I d (A) 3 @ V q s = 10 V 0.8 to 2 1.1 3.5 @ V qs = 10 V 0.8 to 2.5

VN0808M

Abstract: VNDQ09 VNDQ3CHP VN88A TO-205AD
Contextual Info: VNDQ09 N-Channel Enhancement-Mode MOSFETs iTSS?SS.xd DEVICE TYPE PACKAGE Single TO-39 TO-205AD Single TO-237 • VN0808M Single TO-220SD • VN88AFD Quad 14-Pin Plastic • VQ1006J Quad 14-Pin Dual-ln-Line • VQ1006P Single Chip • Available as VNDQ3CHP

Contextual Info: -BTSSKte 2N6661 JANTX, JANTXV N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY _ TO-39 TO-205AD h O (V) (A) 90 4 0.86 V (B R )D S S BO TTO M VIEW •d 2 GATE 3 & C AS E-D R A IN ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

2n3053A complementary

Abstract: 40362 2N4036 BUX40A 40319 2n4314 2N1893 2N2102 2N2270 2N3053
Contextual Info: THOflSON/ D IS T R IB U T O R SÔE D • =102^073 000572b OflO ■ TCSK Bipolar Power Transistors High-Speed Switching h p E at V c e “ 10V V c E » a t 'V C u rren t - mA T yp e No. v CEO<su9> V vc er (* u ) Pt w V 7W max 2N2102 FA M ILY (n-p-n) 2N697

2N6660 JANTX

Contextual Info: 2N6660JAN/JANTX/JANTXV N-Channel Enhancement-Mode MOSFET Transistors Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 60 3 @ VGS = 10 V 0.8 to 2 0.99 Features Benefits Applications D D D D D D D D D D D D D Military Applications D Direct Logic-Level Interface: TTL/CMOS

IRF150CF

Abstract: GENTRON 2SK747A EUM159M 2SK798 EFM159M179 YTF152 YTFP150 2SK747
Contextual Info: MOSFETs Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) gFS Min (S) VGS(th) Max (V) Clsa Max (F) tr Max (s) tf Max (s) Toper Max (OC) Package Style N-Channel Enhancement-Type, (Co nt' d) 5 10 BUZ349 BUZ349 SFN152 YTFP152

2N5781

Contextual Info: 2N5781 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)

BSX46

Contextual Info: BSX46 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)

2N5333

Contextual Info: 2N5333 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)

CV7727

Contextual Info: CV7727 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)

2N6303

Contextual Info: 2N6303 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 120V 0.41 (0.016)

2N4272A

Contextual Info: 2N4272A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 140V 0.41 (0.016)