GE PHOTODIODE Search Results

B5170-02

Contextual Info: Ge Photodiodes Cooled Types Achieves Higher S/N Ratio by Cooling By cooling Ge photodiodes, the dark current can be reduced effec­ tively and the S/N ratio improved. W hen cooling, it should be noted that the spectral response o f Ge photodiodes shifts slightly to the short wavelength region.

B2538-05

Abstract: B6175-05
Contextual Info: Ge Photodiodes Cooled Types Spectral Response Range: 0.8 to 1.8 urn Achieving higher S/N by cooling T h e c h a rcte ristics of dark cu rrent and S / N can be im proved effectiviely by cooling Ge photodiodes. When cooled, it should be noted that the spectral response of Ge pho­

Contextual Info: Ge Photodiodes Noncooled Types NIR (Near Infrared) Detectors for Stable Operation at Room Temperature High Stability Over Extended Time Periods Ge photodiodes are planar type photovoltaic devices that provide stable responsivity over extended time periods.

16C70

Abstract: J16D thermistor inas detector inas judson PA-100 Germanium itt
Contextual Info: J16TE Thermoelectrically Cooled Germanium Detectors judson tach-nalogiea J16TE2 Series 2-Stage Thermoelectrically Cooled Ge General J16TE Series detectors are Judson's high-quality Ge photodiodes mounted on thermoelectric coolers for reduced dark current, improved sensitivity and superior

Contextual Info: Ge Photodiodes Non-cooled Types NIR (Near Infrared) detectors for stable operation at room temperature • High stability over extended time periods Ge photodiodes are planar type photovoltaic devices that provide stable responsivity over extended time periods.

Contextual Info: Ge Photodiodes Non-cooled Types NIR (Near Infrared) detectors for stable operation at room temperature • High stability over extended time periods Ge photodiodes are planar type photovoltaic devices that provide stable responsivity over extended time periods.

Contextual Info: Ge Photodiodes Noncooled Types NIR (Near Infrared) Detectors for Stable Operation at Room Temperature High Stability O ver Extended T im e Periods Ge photodiodes are planar type photovoltaic devices that provide stable responsivity over extended time periods.

Contextual Info: Thermoelectrically Cooled Ge Detectors 0.8 to 1.8 |im General • J16TE2 Series J16TE Series detectors are Judson's high-quality Ge photodiodes m ounted on therm oelectric coolers for reduced d ark current, im proved sensitivity, and superior stability. See general operating

Contextual Info: Ge Avalanche Photodiodes Spectral Response 0.8 to 1.7 fj. m Highly Sensitive Photodiodes with Internal Gain Mechanism Ge avalanche photodiodes APD detect and amplify low level light by means of avalanche effects that take place when a reverse bias is applied.

Contextual Info: Ge Photodiodes Cooled Types Achieves higher S/N ratio by cooling • Optimized for low level infrared photometry • Lower temperature detection limit: Approx. 200 °C By cooling Ge photodiodes, the dark current can be reduced effec­ tively and the S/N ratio improved.

B1920-01

Contextual Info: Ge Photodiodes Non-cooled Types Spectral Response Range: 0.8 to 1.8 |im NIR (Near Infrared) detectors for stable operation at room temperature •High stability over extended tim e periods Ge photo d io d es are planar type photovoltaic devices th a t provide

Contextual Info: FRM138621CU DESCRIPTION The FRM13R621CU is an APD pre-amplifier module for 1300nm wave­ length optical receiver front-end. It contains a planar Ge-APD Avalanche Photodiode and a transimpedance type GaAs pre-amplifier IC. The Ge-APD, having high responsivity, low capacitance and low noise characteristics,

PDINP075FC11-W-0

Abstract: 850nm APD 850nm photodiode pigtail germanium photodiode PIN PDINV300FC21-M-0 D10-210 InGaAs apd photodiode photodiode germanium PDGAJ1001FCA-0-0-01 PDINC1003FCA-0-0-01
Contextual Info: PD LD PDXX Series Detectors for Fiber Optics InGaAs, Si and Ge PIN Diodes Si and Ge APDs Inc. PD-LD Inc. offers a variety of standard and custom PIN Photodiodes and APDs is fiber coupled packages. The semiconductors offered are of proven manufacture and design. Our Silicon

PDINP075500A-0-0-01

Abstract: PD-LD 850nm APD 850nm photodiode pigtail pigtail pin photodiode ge PDINV300SC2A-M-0 PDSIU500ST73-T-0 Si apd photodiode PDGAJ1001FCA-0-0-01 PDINC100SC22-M-0
Contextual Info: PD LD PDXX Series Detectors for Fiber Optics InGaAs, Si and Ge PIN Diodes Si and Ge APDs Inc PD-LD Inc. offers a variety of standard and custom PIN Photodiodes and APDs is fiber coupled packages. The semiconductors offered are of proven manufacture and design. Our Silicon

LH0032

Contextual Info: PHOTODIODE InGaAs APD G8931-04 Time response characteristics compatible with SONET and G/GE-PON G8931-04 is an InGaAs APD that delivers a high-speed response of 2.5 Gbps required for trunk line optical fiber communications such as SONET Synchronous Optical Network , G-PON (Gigabit-capable Passive Optical Network) and GE-PON (Gigabit Ethernet-Passive Optical Network).

G8931-04

Abstract: LH0032 SE-171 OPTICAL NETWORK TERMINAL InGaAs apd photodiode
Contextual Info: PHOTODIODE InGaAs APD G8931-04 Time response characteristics compatible with SONET and G/GE-PON G8931-04 is an InGaAs APD that delivers a high-speed response of 2.5 Gbps required for trunk line optical fiber communications such as SONET Synchronous Optical Network , G-PON (Gigabit-capable Passive Optical Network) and GE-PON (Gigabit Ethernet-Passive Optical Network).

InGaAs apd photodiode

Abstract: G8931-04 Ge APD SE-171 KAPDC0005EC 1NA100 low dark current APD hamamatsu ingaas APD
Contextual Info: PHOTODIODE InGaAs APD G8931-04 Time response characteristics compatible with SONET and G/GE-PON The G8931-04 is an InGaAs APD that delivers a high-speed response of 2.5 Gbps required for trunk line optical fiber communications such as SONET synchronous optical network , G-PON (gigabit-capable passive optical network) and GE-PON (gigabit ethernet-passive optical network).

LH0032

Contextual Info: PHOTODIODE InGaAs APD G8931-04 Time response characteristics compatible with SONET and G/GE-PON G8931-04 is an InGaAs APD that delivers a high-speed response of 2.5 Gbps required for trunk line optical fiber communications such as SONET Synchronous Optical Network , G-PON (Gigabit-capable Passive Optical Network) and GE-PON (Gigabit Ethernet-Passive Optical Network).

peltier effect element

Abstract: B2538-05 B1919-01 B6175-05 res 3010 A3179 A3179-01 B1720-02 B1720-05 B1918-01
Contextual Info: Ge Photodiodes Non-cooled Types Spectral Response Range: 0.8 to 1.8 (im NIR (Near Infrared) detectors for stable operation at room temperature Q •High stability over extended tim e periods Ge p h o to d io d e s a rc p la n a r typ e p h o to v o lta ic d e vic e s th a t p ro v id e

SFH2324

Abstract: TIC 138
Contextual Info: SIEMENS SFH 2323 SFH 2324 GE-AVALANCHE PHOTODIODE MM FIBER PIGTAIL P relim inary Data Sheet P a cka ge D im e n sio n s in m m SFH2323 M ax £>0 65 « 01 0 5 0 9 i 135 1.7 5.5 1.3 ! 14.2 138 18 1 17 8 ! 0 .5 5 0 .4 0 1 .0 0 8 2 3 . 7 6 10 7 6 7 1“ 10.4 SFH2324

G8931-04

Abstract: InGaAs apd photodiode
Contextual Info: PHOTODIODE InGaAs APD G8931-04 SONETG/GE-PONに対応した応答特性 SONET、G/GE-PONなどの幹線系光ファイバ通信に必要な2.5 Gbpsの高速応答を実現しています。 特長 用途 l 高速応答: 2.5 Gbps l 低暗電流 l 低容量

GM10HS

Abstract: GM7HS S20E Germanium power 3T47375 GM2HS Germanium itt
Contextual Info: GERMANIUM POWER DE V I C E S 20E D 3=147375 D000535 7 V-41-41 Ge PHOTODETECTOR Fig 3-1 Typical Specifications at Room Temperative Ge Photodetector ACTIVE DIA. TYPE SPEC TR A L RESPO N SE MM (m) L DARK V (v) R E V E R S E 1UNT R* VOLTAGE C 0R R EN T RESÌSTA NCEKQ

Germanium Power Devices

Abstract: germanium power devices corporation Germanium Power Diodes Photodiodes Germanium PIN Germanium power GAV100 GAV30 Germanium
Contextual Info: GPD GAV30 GAV40 GAV100 Ge Avalanche Photodiodes OTDR Infrared Sensing Telecommunications Optical Communications Short Haul Telecom/Datacom Receivers Germanium Power Devices Corporation GAV30 GAV40 GAV100 GAV30 GAV40 GAV100 Quantum Efficiency peak 72 (80)

germanium power devices corporation

Abstract: Germanium Power Devices Germanium Power Diodes GAV30 GAV300 GAV60 MIL-45208 GAV100 TO46 germanium photodiode PIN
Contextual Info: GAV30 GAV60 GAV100 GAV300 OPTOELECTRONIC PRODUCTS Ge Avalanche Photodiodes •OTDR • Infrared Sensing • Telecommunications • Optical Communications • Short Haul Telecom/Datacom Receivers Germanium Power Devices Corporation • 3147375 DODDbSl ST 1 ■