GE-2 TRANSISTOR Search Results

2N741A

Abstract: 20 A BJT
Contextual Info: 2N741A Ge PNP Lo-Pwr BJT 4.50 Transistors Transistors Bipolar Ge PNP Low-Power . Page 1 of 2 Enter Your Part # Home Part Number: 2N741A Online Store 2N741A Diodes Ge PNP Lo-Pwr BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

bjt specifications

Abstract: 2N1224 TRANSISTORS BJT list
Contextual Info: 2N1224 Ge PNP Lo-Pwr BJT 15.00 Transistors Transistors Bipolar Ge PNP Low-Power . Page 1 of 2 Enter Your Part # Home Part Number: 2N1224 Online Store 2N1224 Diodes Ge PNP Lo-Pwr BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

2N1358

Abstract: bjt specifications power BJT PNP TRANSISTORS BJT list
Contextual Info: 2N1358 Ge PNP Power BJT 17.80 Transistors Transistors Bipolar Ge PNP Power Bipola. Page 1 of 2 Enter Your Part # Home Part Number: 2N1358 Online Store 2N1358 Diodes Ge PNP Pow er BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

ge-20 transistor

Abstract: ge-10 transistor transistor DJ marking transistor DJ 30 at GE Sensing Transistor GE 67 DJ marking DJ5GE GE-17 diagrams
Contextual Info: Proximity Sensors Inductive Nickel-plated Brass Housing Types DJ, M 14, PG 21 • Nickel-plated brass housing, cylindrical • Diameter: M 14, PG 21 • Sensing distance: 2 to 6 mm • Power supply: DJ 2 GE 24 VDC DJ 5 GE 24 VDC DJ 6 GE 10 to 40 VDC • Output: Transistor NPN, make switching

ld photocoupler

Abstract: KB826 KB826A KB826B KB826L M05A GE photocoupler
Contextual Info: PHOTOCOUPLER KB826 GE NERAL PURPOSE HIG H ISOLATIO N VOLTA GE SING LE TRANSISTOR TYPE HIG H COLLECTOR VOLTA GE PHOTOCOUPLER SERIES FEATURES 1.High isolation voltage between input and output Viso= 5000 Vrms 2.High Collector-emitter voltage (Vceo=70 V) 3.Compact dual-in-line package

bjt specifications

Abstract: TRANSISTORS BJT list 2N2528
Contextual Info: 2N2528 Ge PNP Power BJT 40.00 Transistors Transistors Bipolar Ge P. 1 of 2 Home Part Number: 2N2528 Online Store 2N2528 Diodes G e PNP Po w er BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits

2N2426

Abstract: TRANSISTORS BJT list 40N25A 2N242
Contextual Info: 2N2426 Ge NPN Lo-Pwr BJT 7.00 Transistors Transistors Bipolar Ge N. 1 of 2 Home Part Number: 2N2426 Online Store 2N2426 Diodes G e NPN Lo - Pw r BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits

bjt specifications

Abstract: 2N652A power BJT PNP
Contextual Info: 2N652A Ge PNP Lo-Pwr BJT 4.10 Transistors Bipolar Germanium PNP Low-Power Tra. Page 1 of 2 Enter Your Part # Home Part Number: 2N652A Online Store 2N652A Diodes Ge PNP Lo-Pwr BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

BJ 938

Contextual Info: 2N345 Ge PNP Lo-Pwr BJT 7.50 Transistors Transistors Bipolar Ge PN. 1 of 2 Home Part Number: 2N345 Online Store 2N345 Diodes G e PNP Lo - Pw r BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits

2N2043

Contextual Info: 2N2043 Ge PNP Lo-Pwr BJT 12.50 Transistors Transistors Bipolar Ge . 1 of 2 Home Part Number: 2N2043 Online Store 2N2043 Diodes G e PNP Lo - Pw r BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits

bjt specifications

Contextual Info: 2N651A Ge PNP Lo-Pwr BJT 9.00 Transistors Bipolar Germanium PNP Low-Power Tra. Page 1 of 2 Enter Your Part # Home Part Number: 2N651A Online Store 2N651A Diodes Ge PNP Lo-Pwr BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

40N10

Abstract: Bipolar Transistors List
Contextual Info: 2N2208 Ge PNP Lo-Pwr BJT 6.25 Transistors Transistors Bipolar Ge P. 1 of 2 Home Part Number: 2N2208 Online Store 2N2208 Diodes G e PNP Lo - Pw r BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits

2N207B

Contextual Info: 2N207B Ge PNP Lo-Pwr BJT 6.00 Transistors Transistors Bipolar Ge P. 1 of 2 Home Part Number: 2N207B Online Store 2N207B Diodes G e PNP Lo - Pw r BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits

2n274

Abstract: TO44 package
Contextual Info: 2N274 Ge PNP Lo-Pwr BJT 12.35 Transistors Transistors Bipolar Ge P. 1 of 2 Home Part Number: 2N274 Online Store 2N274 Diodes G e PNP Lo - Pw r BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits

CDP65C51

Abstract: PMC11 100-10L 100-10L B2 CDP65C51-1 CDP65C51-2 CDP65C51-4 TIC32 CDP65C51E1 ICAN-6525
Contextual Info: GE/RCA Products V GE Solid Stats Msmory/'Microprocessor Products CDP65C51 Advance Information TERMINAL ASSIGNMENT 2 6 -R /"W vss — 1 cso — 2 2 7 -+ 2 est — 3 26 — R E S - 4 2 3 - 0 7 R XC — 5 2 4 - 06 X T L I— 6 2 3 -

Contextual Info: MSC3130T1* CASE 318D-03, STYLE 1 CO LLEC TO R m M AXIM U M RATINGS TA = 2 5 C Rating C o lle c to r-B a s e V olta ge C o lle c to r-E m itte r V olta ge E m itte r-8 a s e V olta ge C o lle c to r C u rre n t-C o n tin u o u s Symbol Value Unit VCBO 15

BD3010AFV

Contextual Info: Data eet Datasheet 200mA 2 A LDO O Regulattor with w V Voltag ge De etecto or and d Watchdo og Timer BD3010AFV B V-M Ge eneral Descrription Key K Specifica ations  Regulato or Supply Volttage Range: 5.6 V to 36 6V Range:  WDT Su upply Voltage R 6.0 V to 36

113 marking code PNP transistor

Abstract: TRANSISTOR 3F t marking code 10 sot23 pnp low saturation transistor sot23 PNP POWER TRANSISTOR SOT23 PBSS5220T PBSS5230T
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ge M3D088 PBSS5220T 20 V, 2 A PNP low VCEsat BISS transistor Product specification 2003 Dec 18 Philips Semiconductors Product specification 20 V, 2 A PNP low VCEsat (BISS) transistor PBSS5220T FEATURES QUICK REFERENCE DATA

PBSS5250T

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ge M3D088 PBSS5250T 50 V, 2 A PNP low VCEsat BISS transistor Product specification 2003 Oct 09 Philips Semiconductors Product specification 50 V, 2 A PNP low VCEsat (BISS) transistor PBSS5250T QUICK REFERENCE DATA FEATURES

marking code 10 sot23

Abstract: PNP POWER TRANSISTOR SOT23 PBSS5230T
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ge M3D088 PBSS5230T 30 V, 2 A PNP low VCEsat BISS transistor Product specification 2003 Dec 18 Philips Semiconductors Product specification 30 V, 2 A PNP low VCEsat (BISS) transistor PBSS5230T FEATURES QUICK REFERENCE DATA

ge-2 transistor

Contextual Info: M C C TO-92MOD Plastic-Encapsulate T r a n s is t o r s ^ ^ 2SC1627A TRANSISTOR NPN FEATURES T O - 9 2 M O D P cm : 0.8W (Tam b=25“C ) current 1.E M IT T E R Ic m : 0.4 A 2.C O L L E C T O R vo lta ge 3.B A S E V(BR)CBO: 80 V M d s to ra g e ju n ctio n tem perature ran ge

CHDTB114TKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTB114TKGP SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 500 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE B 2 2 .103 (2.64) .086 (2.20) .028 (0.70)

CHDTA115TKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA115TKGP SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE B 2 2 .103 (2.64) .086 (2.20) .028 (0.70)

CHDTA114TKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA114TKGP SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE B 2 2 .103 (2.64) .086 (2.20) .028 (0.70)