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    GE-20 TRANSISTOR Search Results

    GE-20 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    GE-20 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    113 marking code PNP transistor

    Abstract: TRANSISTOR 3F t marking code 10 sot23 pnp low saturation transistor sot23 PNP POWER TRANSISTOR SOT23 PBSS5220T PBSS5230T
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ge M3D088 PBSS5220T 20 V, 2 A PNP low VCEsat BISS transistor Product specification 2003 Dec 18 Philips Semiconductors Product specification 20 V, 2 A PNP low VCEsat (BISS) transistor PBSS5220T FEATURES QUICK REFERENCE DATA


    Original     		M3D088 PBSS5220T SCA75 R75/01/pp7 113 marking code PNP transistor TRANSISTOR 3F t marking code 10 sot23 pnp low saturation transistor sot23 PNP POWER TRANSISTOR SOT23 PBSS5220T PBSS5230T PDF

    Contextual Info: FF 150 R 06 KL 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte VcES Maximum rated values 600 V 150 A 300 A 700 W V ge 20 V Inversdiode Inverse diode V eg 20 V Elektrische Eigenschaften Electrical properties


    OCR Scan     		600KF< PDF

    Contextual Info: FS 25 R 06 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Hochstzulässige W erte Maximum rated values 600 V 25 A 50 A 100 W ge 20 V Inversdiode Inverse diode LU 20 V Elektrische Eigenschaften Electrical properties Höchstzulässige W erte


    OCR Scan     		34G32R7 PDF

    Contextual Info: 2N602 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)20 I(C) Max. (A)50m Absolute Max. Power Diss. (W)120m Maximum Operating Temp (øC)85þ I(CBO) Max. (A)8.0u @V(CBO) (V) (Test Condition)10 h(FE) Min. Current gain.20 h(FE) Max. Current gain.80


    Original     		2N602 Freq10MÂ PDF

    Contextual Info: 2N3412 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20â V(BR)CBO (V)20 I(C) Max. (A) Absolute Max. Power Diss. (W)60m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)3.0u @V(CBO) (V) (Test Condition)5.0 h(FE) Min. Current gain.20 h(FE) Max. Current gain.175


    Original     		2N3412 Freq100M PDF

    Contextual Info: 2N377 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)20ã V(BR)CBO (V)25 I(C) Max. (A)200m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)20u @V(CBO) (V) (Test Condition)20 h(FE) Min. Current gain.20 h(FE) Max. Current gain.60


    Original     		2N377 PDF

    sot231a

    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ge M3D102 PBSS5140U 40 V low VCEsat PNP transistor Product specification Supersedes data of 2001 Mar 27 2001 Jul 20 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5140U FEATURES QUICK REFERENCE DATA


    Original     		M3D102 PBSS5140U 613514/02/pp12 sot231a PDF

    2G381

    Contextual Info: 2G381 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20ã V(BR)CBO (V)20 I(C) Max. (A)500m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.


    Original     		2G381 PDF

    ge d44h11

    Abstract: D44* general electric npn to-220 D44H5 D44Hll D44H1 D44H2 D44H4 D44H7 D44H8 D45H1
    Contextual Info: SILICON POWER TRANSISTORS 229 KP COMPLEMENTARY - 10 AMPERES Pt T c = 2 5°C GE Type NPN V CEO Min. V •c Cont. (A I 50 30 50 PNP M in. M in. 10 35 20 -3 0 -1 0 35 20 50 30 10 60 40 50 —30 ■10 60 40 50 45 10 35 20 <W) D44H1 - D45H1 D 44 H 2 - D 45H 2


    OCR Scan     		D44H1 D45H1 D44H2 D45H2 D44H4 D45H4 D44H5 D45H5 D44H7 D45H7 ge d44h11 D44* general electric npn to-220 D44Hll D44H1 D44H2 D44H4 D44H7 D44H8 PDF

    Contextual Info: 2N2552 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)40 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)20# Maximum Operating Temp (øC)100# I(CBO) Max. (A)125u @V(CBO) (V) (Test Condition)20 V(CE)sat Max. (V).25 @I(C) (A) (Test Condition)1.0


    Original     		2N2552 StyleStR-10 PDF

    Contextual Info: 2N2564 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)40 I(C) Max. (A)3.5 Absolute Max. Power Diss. (W)20# Maximum Operating Temp (øC)100# I(CBO) Max. (A)125u @V(CBO) (V) (Test Condition)20 V(CE)sat Max. (V).25 @I(C) (A) (Test Condition)1.0


    Original     		2N2564 Freq250k PDF

    Contextual Info: 125T1 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)20 I(C) Max. (A)400m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)16uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.


    Original     		125T1 PDF

    Contextual Info: 126T1 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)20 I(C) Max. (A)400m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)16uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.


    Original     		126T1 PDF

    Contextual Info: 2N1065 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)40 I(C) Max. (A) Absolute Max. Power Diss. (W)120m Maximum Operating Temp (øC)85þ I(CBO) Max. (A)8.0u @V(CBO) (V) (Test Condition)10 h(FE) Min. Current gain.20 h(FE) Max. Current gain.80


    Original     		2N1065 Freq20M PDF

    Contextual Info: 2N1158A Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20â V(BR)CBO (V)20 I(C) Max. (A)100m Absolute Max. Power Diss. (W)75m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)5.0u @V(CBO) (V) (Test Condition)10 h(FE) Min. Current gain. h(FE) Max. Current gain.


    Original     		2N1158A PDF

    Contextual Info: 2N1319 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)20 I(C) Max. (A)400m Absolute Max. Power Diss. (W)120m Maximum Operating Temp (øC)71õ I(CBO) Max. (A)6.0u @V(CBO) (V) (Test Condition)12 h(FE) Min. Current gain.15 h(FE) Max. Current gain.


    Original     		2N1319 PDF

    Contextual Info: 2N2560 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)40 I(C) Max. (A)3.5 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)100# I(CBO) Max. (A)125u @V(CBO) (V) (Test Condition)20 V(CE)sat Max. (V).25 @I(C) (A) (Test Condition)1.0


    Original     		2N2560 Freq250k StyleStR-10 PDF

    Contextual Info: 2N1784 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)30 I(C) Max. (A)200m Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)25u @V(CBO) (V) (Test Condition)30 h(FE) Min. Current gain.20 h(FE) Max. Current gain.


    Original     		2N1784 Freq10MÂ PDF

    Contextual Info: 2N1251 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)100m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition)20 h(FE) Min. Current gain. h(FE) Max. Current gain.


    Original     		2N1251 PDF

    Contextual Info: AC120 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)20 I(C) Max. (A)300m Absolute Max. Power Diss. (W)210m Maximum Operating Temp (øC)75õ I(CBO) Max. (A)30u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.50 h(FE) Max. Current gain.


    Original     		AC120 PDF

    Contextual Info: GFT3008/20 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)75õ I(CBO) Max. (A).50m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		GFT3008/20 Freq350k time20u PDF

    Contextual Info: MM2550 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)20 I(C) Max. (A)100m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)10uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.20 h(FE) Max. Current gain.


    Original     		MM2550 PDF

    Contextual Info: 127T1 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)20 I(C) Max. (A)400m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)16uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.


    Original     		127T1 PDF

    Contextual Info: 2N2489 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)100m Absolute Max. Power Diss. (W)60m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)2.5u @V(CBO) (V) (Test Condition)15 h(FE) Min. Current gain.20 h(FE) Max. Current gain.


    Original     		2N2489 Freq300M req300M PDF