GE-3 PNP TRANSISTOR Search Results

transistor p89

Abstract: transistor be p89
Contextual Info: SOT89 PNP SILICON PLANAR M EDIU M POWER HIGH PERFORMANCE TRANSISTOR ISSU E 3 - OCTOBER 1995 PARTMARKING DETAIL - O P89 ABSOLUTE M A X IM U M RATINGS. SY M BO L PARAM ETER C o lle cto r-B a se V o lta ge C olle ctor-E m itter V o lta ge E m itte r-B ase V o lta ge

2N4261

Contextual Info: 2N4261 Chip: 4.5V; 30A geometry 0014; polarity PNP 4.99 Transistors . 1 of 1 Home Part Number: 2N4261 Online Store 2N4261 Diodes C hip: 4 .5 V; 3 0 A ge o m et ry 0 0 1 4 ; po larity PNP Transistors

Asy transistor

Abstract: transistor ASY TRANSISTOR ASY 75 germanium transistor asy asy70 TRANSISTOR ASY 0.25 W asy oi TRANSISTOR Q60118-Y48-D Q60118-Y48-E Q60118-Y70-D
Contextual Info: 2SC D • r- 3 7 - o i fl235b05 00QMGÛ7 b « S I E G PNP Transistors for Switching Applications A SY48 A SY70 - SIEMENS A K TI EN GE SE LL SCH AF Not for new design ASY 48 and ASY 70 are alloyed germanium PNP transistors in 1 A 3 DIN 41871 case

Contextual Info: STA8550SF PNP Silicon Transistor Descriptions PIN Connection • High current applicat ion • Radio in class B push- pull operat ion 3 Feature 1 • Com plem ent ary pair wit h STC8050SF 2 SOT- 2 3 F Ordering Information Type N O. M a r k in g Pa ck a ge Code

Contextual Info: 2SA1981SF PNP Silicon Transistor Description PIN Connection • Audio power am plifier applicat ion 3 Features • High h FE : h FE= 100~ 320 • Com plem ent ary pair wit h 2SC5344SF 1 2 Ordering Information Type N O. M a r k in g SOT- 2 3 F Pa ck a ge Code

Contextual Info: ' Sv m Se m i ' SOT -23 Plastic Encapsulate Transistors 5YM5ÊMI 5EMIC0MDUCT0R MMBT2907AL GE 2 .4 1.3 T1 TRANSI ST OR PNP FEA TURES SO T-23 Power dissipation Pa 1. BASE : 0.3 W <(iflb=25'C) Collector current 2. EMITTER 3. COLLECT fcn : - 0. a OR Collector-base voltage

V8060

Contextual Info: 1989963 C E N T R A L S E M I C O N D U C T O R [CENTRAL SEMICONDUCTOR : •' • 92D 00380 T ~ 3 3~ l'ìfi'mH aOQDBfiO D41 El D41E5 D41E7 . IV n U~ir: eCKCK£5 èMtfitì&GEùÈaSigteE1SeC yi fcò'o PNP SILICON POWER TRANSISTOR Central semiconductor Corp.

D40D5

Abstract: D40D7...8 D4001 D4102 tab ic D40D1 D40D2 D40D3 D40D4 D40D7
Contextual Info: SILICON POWER TRANSISTORS COMPLEMENTARY - 1 AMPERE Pt •c T c = 25°C v CEO Cont. Min. <A V) (W) GE Type NPN PNP @ 2V , h FE 100mA hFE @ 2V , 1A Min. Max. Min. 10 D40D1 - 6.25 30 1.0 50 150 - D41D1 6.25 -3 0 1.0 50 150 D40D2 - 6.25 30 1.0 120 360 20 - D41D2

D40E5

Abstract: D40D14 tab ic D40D5 D4102 D40D1 D40D2 D40D3 D40D4 D40D7
Contextual Info: SILICON POWER TRANSISTORS COMPLEMENTARY - 1 AMPERE Pt •c T c = 25°C v CEO Cont. Min. <A V) (W) GE Type NPN PNP @ 2V , h FE 100mA hFE @ 2V , 1A Min. Max. Min. 10 D40D1 - 6.25 30 1.0 50 150 - D41D1 6.25 -3 0 1.0 50 150 D40D2 - 6.25 30 1.0 120 360 20 - D41D2

tab ic

Abstract: D40D1 D40D2 D40D3 D40D4 D40D5 D40D7 D41D1 D41D2 D41D4
Contextual Info: SILICON POWER TRANSISTORS COMPLEMENTARY - 1 AMPERE Pt •c T c = 25°C v CEO Cont. Min. <A V) (W) GE Type NPN PNP @ 2V , h FE 100mA hFE @ 2V , 1A Min. Max. Min. 10 D40D1 - 6.25 30 1.0 50 150 - D41D1 6.25 -3 0 1.0 50 150 D40D2 - 6.25 30 1.0 120 360 20 - D41D2

Contextual Info: STB1017PI PNP Silicon Transistor Features • • • • PIN Connection Low sat urat ion swit ching applicat ion Power am plifier High Volt age : VCEO= - 80V Min. Com plem ent t o STD1408PI 1 2 3 TO-220F-3L Ordering Information Type N O. M a r k in g Pa ck a ge Code

Contextual Info: DTB113ZK Digital transistor, PNP, with 2 resistors Features Dimensions Units : mm • available in an S M T 3 (SMT, S C -59 ) packa ge • p a cka g e m arking: D T B 1 13ZK; G 1 1 • a built-in b ias resistor a llow s inverter circuit configuration without external

pt 100 - to92

Abstract: pt 100 to92 MPS-A63 MPS-A64 MPSA63
Contextual Info: G Ql E SOLID STATE 3875081 G E SOLID STATE Signal Transistors_ DE § 3û750âl □G17tn G 01E 17990 1 D _ 2.7 MPS-A63, MPS-A64 Silicon Darlington Transistors TO-92 The GE/RCA MPS-A63 and A64 are planar epitaxial passivated PNP silicon Darlington transistors designed for preamplitier input applications where high im pedance is a

Contextual Info: TOSHIBA 2SA1721 SILICON PNP EPITAXIAL TYPE PCT PROCESS U nit in mm HIGH VOLTAGE CONTROL APPLICATIONS. +0.5 2 5 - 0 .3 PLASM A DISPLAY, NIXIE TUBE DRIVER APPLICATIONS. •025 1 .5 - 0.15 CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS. 960 • High V o lta ge: V q b q - —300V, V q e q = —300V

Contextual Info: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT593 ISSUE 3 • NOVEMBER 1995_Q C O M PLEM EN TA RY TYPE FM M T493 P A R T M A R K IN G D E T A IL - 593 ABSOLUTE M A X IM U M RATINGS. PARAM ETER SYM BO L C o lle cto r-B a se V o lta ge V ALUE

ge d44h11

Abstract: D44* general electric npn to-220 D44H5 D44Hll D44H1 D44H2 D44H4 D44H7 D44H8 D45H1
Contextual Info: SILICON POWER TRANSISTORS 229 KP COMPLEMENTARY - 10 AMPERES Pt T c = 2 5°C GE Type NPN V CEO Min. V •c Cont. (A I 50 30 50 PNP M in. M in. 10 35 20 -3 0 -1 0 35 20 50 30 10 60 40 50 —30 ■10 60 40 50 45 10 35 20 <W) D44H1 - D45H1 D 44 H 2 - D 45H 2

ge d45h11

Abstract: GE D45H2 ge d44h11 D44H8 D44H5 D45H2 D44H1 D44H2 transistor d44h11 D44H7
Contextual Info: SILICON POWER TRANSISTORS 229 KP COMPLEMENTARY - 10 AMPERES Pt T c = 2 5°C GE T yp e NPN V CEO M in. V •c C o n t. (A I 50 30 50 PNP M in . M in . 10 35 20 -3 0 -1 0 35 20 50 30 10 60 40 50 —30 ■10 60 40 50 45 10 35 20 <W) D44H1 - D45H1 D 44 H 2

Contextual Info: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FCX593 ISSUE 3 • NOVEMBER 1995_ O C O M P L IM E N T A R Y T O F M M T 4 9 3 P A R T M A R K IN G D E T A IL - P93 ABSOLUTE M A X IM U M RATINGS. PARAM ETER V A LU E SYM BO L U N IT C o lle cto r-B a se V o lta ge

Contextual Info: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 -OCTOBER 1995 O CO M PLEM ENTARY TYPE- BFN16 P A R T M A R K IN G D E T A IL S - DG BFN17 B ABSO LU TE M A X IM U M RATINGS. PARAM ETER SYM BO L V A LU E U N IT V CBO -250 V C olle ctor-E m itter V o lta ge

Contextual Info: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR I S S U E 3 - A U G U S T 1995 _ FEATURES * H i g h V CE0 * L o w saturation v olta ge C O M P L E M E N T A R Y TYPE: - B SP 1 9 P A R T M A R K IN G D E T A IL : - B S P 1 6 ABSOLUTE MAXIMUM RATINGS.

D41D8

Abstract: D41D10 transistor D41D5 tab ic ic tab 810 d28d D4102 D41D D41D4 D40D2
Contextual Info: SILICON POWER T R A N S I S T O R S COMPLEMENTARY - 1 AMPERE Pt T c = 25°C v CEO Min. GE Type NPN PNP W h FE •c (V ) Cont. <A) hF E @ 2V , 100mA @ 2V , 1A Min. Max. M in. 10 D40D1 - 6.25 30 1.0 50 150 - D41D1 6.25 -3 0 1.0 50 150 D 40 D 2 - 6.25 30 1.0

Contextual Info: Philips Semiconductors Product specification PNP power transistor BDP32 FEATURES • S O T223 package. DESCRIPTION P N P p o w e r tra n s is to r in a plastic S O T 2 2 3 p a c k a g e fo r ge n e ra l p u rp o s e , m e d iu m p o w e r a p p lic a tio n s .

Contextual Info: SOT223 PNP SILICON PLANAR M EDIUM POWER TRANSISTOR ISSUE 3 -A U G U S T 1995 O FEA TU RES * Su ita b le for A F d riv e rs and output sta ge s * H ig h collector current and t o w V rE ,.a!, C O M P L E M E N T A R Y TYPE - BCP5- P A R T M A R K IN G D E T A IL S -

2N2907

Abstract: 935J
Contextual Info: A L LE GR O M I C R O S Y S T E M S INC T3» D • 0 S Ü 4 33 Ô 0 0 0 3 73 1 7 ■ AL6R i PROCESS TQL Process TQL PNP Small-Signal Transistor Process T Q L is a double-diffused P N P silicon epi­ taxial planar device for low-noise, high-gain ampli­ fication, m edium -power sw itching, and ge n e ralpurpose use from dc to UHF. Process T Q L is the