GEC MARCONI Search Results

Contextual Info: P B t i G E C p l e s s e y CT3167-1.3 ROTATING JOINTS INTRODUCTION CUSTOMER SUPPORT SERVICE GPS Advanced Microwave Facility at Lincoln collaborates with the GEC - Marconi Research Centre MRC at Great Baddow to offer a w ide range of microwave rotary joints.

GEC 44 3A

Contextual Info: GEC PLESSEY S E M I C O N D U C T O R S | 3074-1.2 December 1991 CT2512 MIL-STD-1553B DUAL REDUNDANT REMOTE TERMINAL HYBRID UNIT The CT2512 contains 2 transceivers, 2 encoder/decoders, bit

Contextual Info: P35-4266 GaAs MMIC SWITCH Features • • • • Broadband performance High Isolation Low DC power consumption TTL Control High Isolation DC to 1GHZ SPDT Terminated Switch with All Off position and TTL Control GEC-MARCONI MATERIALS TECHNOLOGY • Telephone +44 0 327 356468 • Facsimile +44 (0) 327 356775

Contextual Info: PBti GEC p l e s s e y DS3387-1.4 DA3073 26.5 to 40GHz DETECTOR FOR USE WITH THE MARCONI INSTRUMENTS 6500 SCALAR ANALYSER The DA3073 is a 26.5 to 40GHz zero biased detector, for use with the Marconi Instruments 6500 scalar analyser. The unit contains video matching and temperature compensation

Contextual Info: GEC PLESSEY S IM I ( \ I) ma3175i Memory Management Unit & Block Protect Unit I: (Advanced data) S10212ADF Issue 1.1 December 1990 Features Block Diagram M A 31751 • Radiation Hard CMOS/SOS Technology CPU B U SSES • User Configurable as Either a Memory

Contextual Info: GEC PLESSEY s l- M I < O \ I i; C I ) K MAS15530 Radiation Hard Manchester Encoder - Decoder > S10400FDS Issue 1.3 November 1990 Features • MIL-STD-1553 compatible • Radiation Hard Valid Word E Encoder Shift Clock e Take Data G • 1.25 megabit/sec. Maximum Data Rate

M2909

Contextual Info: GEC PLESSEY S 1M I C \ 1) 1; ( . MA9000 Series Silicon-on-Sapphire Radiation Hard Gate Arrays ] () K > S21300FDS Issue 1.1 November 1990 Features Cell Unit • Radiation Hard to 1MRad(Si) V DD ^ I • High SEU immunity, latch-up free • Double-Level-Metal CMOS/SOS Technology

half adder ttl

Abstract: MA914 MA92 non inverting buffer 8 volts via apollo vp GEC Marconi GEC Plessey m SHR8
Contextual Info: GEC PL ESS EY S I M I , O \ I I, I. T O MAMMA Sea of Gates Radiation Hard Advanced Gate Array Design System K -> S21600FDS Issue 1.2 Novem ber 1990 Features • Channelless array architecture • Typical gate delay 1 OnS - toggle rates of 100MHz achievable

Contextual Info: GEC PLESSEY S I M I O N I IJ (. T () R maskm Radiation Hard 4096x1 Bit Static RAM S C10305FDS Issue 1.3 October 1990 Features • 3nm CMOS-SOS technology KOW Decoder • Latch-up free 64 x M Array • Fast access time 90ns typical • Total dose 10s rad (Si)

2048x8 RAM

Abstract: 6216 static ram
Contextual Info: GEC PLESSEY m a 6H 6/6216 Radiation Hard 2048x8 Bit Static RAM S10307FDS Issue 1.5 O ctober 1990 Features • 3pm CMOS-SOS technology • Latch up free • Fast access time 110ns MA6116 and 85ns (MA6216) typical • Total dose 1.5x10s rad (Si) • Transient upset 5x1010 rad (Si) /sec

Contextual Info: GEC PLESSEY S IM I <> \ I I ( MA28155 Radiation Hard Programmable Peripheral Interface I () K S S10205FDS Issue 2 September 1990 General Description Features • Radiation Hard to 1 MRad (Si) The M A28155 is a g e n eral purpose p ro g ram m ab le Input/Output device designed for use w ith the MAS281

Contextual Info: GEC P L E S S E Y v r M I ( \ [) i: c [ (1 K 54 HSC/T 630 Radiation Hard 16-Bit Parallel Error Detection & Correction s S10503FDS Issue 2.2 O ctober 1990 Features • Radiation Hard: Dose rate upset exceeding 3x10'° Rad (Si)/sec. Total dose for functionality upto 1x10‘ Rad (Si).

Contextual Info: GEC PLESSEY MA28137 M M | M H B n F B i|llw *W •■■■■■■■■■■■■■■■■I * Radiation Hard Programmable DMA Controller S10203FDS Issue 2.4 October 1990 Features • Radiation hard to 1 MRad Si • High SEU immunity, iatch-up free

Contextual Info: GEC P LES S EY ^ I M I ( \ I) U t, T O K 15HSC Series Radiation Hard High Speed C M O S/SO S Logic S (Advanced Data) S10505ASF Issue 1.2 November 1990 Features • Radiation Hard to 1.5jim C M O S/SO S technology • High SEU immunity • Latch up free

MIL-STD-1750

Contextual Info: GEC P L E S S E Y SEMICONDS 43E D • 37 b ñ S2 2 DQIMSS? H « P L S B G E C P L E S S E Y ma317so mSsMl m cM W W m 'm im w m High Performance MIL-STD-1750 Microprocessor Advance data S10103AD S Issue 2.3 O ctober 1990 Features MPROEN PEN EXADEN FLT7N SYSFN

8GHz transceiver specification

Abstract: microwave transmitter 8GHz DE6003-001 MD6420A MARCONI 2031 CPFSK receiver transradio MARCONI 2031 GENERATOR DS3506 DS3506-7
Contextual Info: w GEC PLESSEY JUNE 1995 S E M I C O N D U C T O R S D S 3 5 0 6 -7 .3 DE6003 DIGITAL RADIO TRANSCEIVER S u p e rs e d e s D S 3 5 0 6 -6 .3 , S e p te m b e r 19 94 The DE6003 is a high perform ance frequency hopping microwave radio, designed for spread spectrum operation. It oper­

marconi

Contextual Info: FEATURES ÂféO Ô EL NO. • General Purpose Amplifier In PIN FET Receiver Ï ^ # 8 6 -1 1 1 0 ■ Transimpedance Amplifier For Wide Band PIN FET Receiver ■ High Gm, Typically 45 mS ■ Low Gate Leakage Current, Typically 10nA At -5 Volts GATE ■ No Selection Required

opto fet

Abstract: 00242A P35-1110 P35-1110-0 P35-1110-1 GaAs MESFET for opto receivers microwave MARCONI 50ln 50sn
Contextual Info: FEATURES • General Purpose Amplifier In PIN FET Receiver ■ Transimpedance Amplifier For Wide Band PIN FET Receiver ■ High Gm, Typically 45 mS ■ Low Gate Leakage Current, Typically 10nA At -5 Volts & MODEL NO. P35-1110 GaAs MESFET For OPTO Receivers

Contextual Info: FEATURES MODEL NO. P35-1110 • General Purpose Amplifier In PIN FET Receiver ■ Transimpedance Amplifier For Wide Band PIN FET Receiver GaAs MESFET For OPTO Receivers ■ High Gm, Typically 45 mS ■ Low Gate Leakage Current, Typically 10nA At -5 Volts GATE

GEC Marconi

Abstract: marconi
Contextual Info: & FEATURES • General Purpose Amplifier In PIN FET Receiver ■ Transim pedance Amplifier For W ide Band PIN FET Receiver ■ MODEL NO. P35-1110 GaAs MESFET For OPTO Receivers High Gm, Typically 45 mS ■ Low Gate Leakage Current, Typically 10nA At -5 Volts

Contextual Info: G E C P L E S S E Y ma28isi_ Radiation Hard Programmable Communication Interface si0204fds issue 2 September 1990 Features • R ad iatio n hard to 1 M Rad Si a • Latch up fre e , high SEU im m unity • Silico n-o n-Sapphire techn olo g y • S y n ch ro n o u s 5-8 Bit characters; internal or

1750A

Abstract: 1nt02 MAS281 Marconi Electronic Devices mil-std-1750a
Contextual Info: G E C P L E S S E Y mai7503 ' 1 M I C O \ D li C. MIL-STD-1750A Interrupt Unit I O K S S10209FDS Issue 1.4 N ovem ber 1990 Features Block Diagram • M il-Std-1750A Instruction Set A rchitecture • Full Perfo rm an ce o v e r M ilita ry T e m p e ra tu re

Contextual Info: G E C P L E S S E Y ma9264 S I M 1 C N 1) I) ( I () K Radiation Hard 8192x8 Bit Static R A M S (Advance Data) S10301 A D S Issue 2.1 October 1990 Features Block Diagram • 1.5(im CMOS-SOS technology • Latch up free • Fast access time 45ns • Total dose 106 rad (Si)

Contextual Info: G E C P L E S S E Y ma93m s I M I < \ [> I, ( I () K Radiation Hard 8192x8 Bit Static RAM s> (Advance Data) S10302ADS Issue 1.3 October 1990 Features Block Diagram • 1.5pm CMOS-SOS technology • Latch up free • Fast access time 45ns • Total dose 10s rad (Si)