MA9264 Search Results
MA9264 Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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MA9264 | Dynex | Radiation Hard 8192x8 Bit Static RAM | Original | 244.19KB | 15 |
MA9264 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: S i GEC PLESSEY S F M ADVANCE DATA ¡ C O N D U C T O R S DS3692-5.1 MA9264 RADIATION HARD 8192 X 8 BIT STATIC RAM The MA9264 64k Static RAM is configured as 8192x8 bits and manufactured using CMOS-SOS high performance, radiation hard, 1.5nm technology. The design uses a 6 transistor cell and has full static operation with |
OCR Scan |
DS3692-5 MA9264 MA9264 8192x8 37bfl522 0D23flfl7 | |
Contextual Info: Si GEC PLESSEY ADVANCE DATA S E M I C O N D U C T O R S DS3692-4.3 MA9264 RADIATION HARD 8192 X 8 BIT STATIC RAM The MA9264 64k Static RAM is configured as 8192x8 bits and manufactured using CMOS-SOS high performance, radiation hard, 1.5|±m technology. The design uses a 6 transistor cell and has full static operation with |
OCR Scan |
DS3692-4 MA9264 MA9264 8192x8 110lOO 37tjflS22 | |
MA9264Contextual Info: MA9264 MA9264 Radiation Hard 8192x8 Bit Static RAM Replaces January 2000 version, DS3692-7.0 DS3692-7.1 July 2002 The MA9264 64k Static RAM is configured as 8192x8 bits and manufactured using CMOS-SOS high performance, radiation hard, 1.5µm technology. The design uses a 6 transistor cell and has full static operation with |
Original |
MA9264 8192x8 DS3692-7 MA9264 | |
MA9264Contextual Info: MA9264 MA9264 Radiation Hard 8192x8 Bit Static RAM Replaces June 1999 version, DS3692-6.0 DS3692-7.0 January 2000 The MA9264 64k Static RAM is configured as 8192x8 bits and manufactured using CMOS-SOS high performance, radiation hard, 1.5µm technology. The design uses a 6 transistor cell and has full static operation with |
Original |
MA9264 8192x8 DS3692-6 DS3692-7 MA9264 | |
Contextual Info: G E C P L E S S E Y ma9264 S I M 1 C N 1) I) ( I () K Radiation Hard 8192x8 Bit Static R A M S (Advance Data) S10301 A D S Issue 2.1 October 1990 Features Block Diagram • 1.5(im CMOS-SOS technology • Latch up free • Fast access time 45ns • Total dose 106 rad (Si) |
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ma9264 8192x8 S10301 MA9264 alt-60 1x10fi 1x10ls | |
MA9264
Abstract: MA92 CS209
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MA9264 DS3692-5 MA9264 8192x8 MA92 CS209 | |
MA9264
Abstract: MAX9264 XG404
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MA9264 8192x8 DS3692-7 MA9264 MAX9264 XG404 | |
atmel 424
Abstract: AT65609EHW AT65609EHW-CI40SV AT65609E MA9264 ATMel 046 MIL-PRF38535 AT65609EHW-CI40MQ AT65609EHW-CI40SR
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440mW MIL-PRF38535 AT65609EHW MA9264 7791C atmel 424 AT65609EHW-CI40SV AT65609E ATMel 046 MIL-PRF38535 AT65609EHW-CI40MQ AT65609EHW-CI40SR | |
Contextual Info: Features • Operating Voltage: 5V • Access Time: 40ns • Very Low Power Consumption • • • • • • • • • – Active: 440mW Max – Standby: 10mW (Typ) Wide Temperature Range: -55°C to +125°C 600 Mils Width Package: SB28 TTL Compatible Inputs and Outputs |
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440mW MIL-PRF38535 AT65609EHW MA9264 7791Câ | |
Contextual Info: Features • Operating Voltage: 5V • Access Time: 40ns • Very Low Power Consumption – Active: 440mW Max – Standby: 10mW (Typ) • Wide Temperature Range: -55°C to +125°C • 600 Mils Width Package: SB28 • TTL Compatible Inputs and Outputs • Asynchronous |
Original |
440mW MIL-PRF38535 AT65609EHW MA9264 7791Dâ |