GENERAL SEMICONDUCTOR INDUSTRIES Search Results

Ap6k

Contextual Info: GENERAL SEMICONDUCTOR 3918590 GENERAL - w/ S E MI CONDU CT OR General Semiconductor Industries, Inc. FEATURES • 600wattsPeakPulsePower dissipation • Avallableinrangesfrom6.8to 400V volts • BIDIRECTIONAL types available • Each device 100% tested MAXIMUM RATINGS

28 volt transzorb

Abstract: ict-5 diode ict diode 3 Volt transzorb TRANSZORB diode HC- 543 transzorb application note transzorb symbol What is a TRANSZORB TRANSZORB
Contextual Info: SÛUARE D CO/ GENERAL ^ 3918590 GENERAL SEMICONDUCTOR General ^ ^ Semiconductor ^ « Industries, Inc. î • ISOOwattoPeakPulsePower dissipation • Avallabtelnrangesfrom5.0to45 volts • Transient protection or CMOS, MOS, Bidirectional ICs (TTL, ECL, DTL, RTL and Linear Functions

2n4305

Contextual Info: GENERAL TS SEMICONDUCTOR 3918590 GENERAL SEMICONDUCTOR , l^r . General Semiconductor i^L Industries, Ine . DÉ”! BTlñSTO 0GDIT34 3 T2C 01934 O 7 ^ 3 3 ^ 5 1 - NPN TRANSISTOR CHIP S q U H R E I] CQMPRNY “27” Typical Device Types: 2N4305, 2N5002, 2N5658, 2N5665, 2N5667

Contextual Info: GENERAL TË SEMICONDUCTOR 3918590 GENERAL 72C SEMICONDUCTOR General 2 ^ Semiconductor J^L Industries, Ine • dT | OODITBÖ 01938 D □ 1 ““ 7 ^ 3 3 H NPN TRANSISTOR CHIP « O ft» S Q U R R E D COMPANY Typical Device Types: 2N6274-2N6277, G STU15040

Contextual Info: GENERAL 3 9 1 6 590 ^ Ta SEMICONDUCTOR GENERAL SEMICONDUCTOR A General Semiconductor Industries, Inc • d F J b tiô s td 72C 0 1 9 3 0 D □ □ d i cî 3 0 7 ~ b 33 NPN TRANSISTOR CHIP « 5 Q U B R E TI COMPANY Typical Device Type: 2N1724, 2N5671, 2N5672

Contextual Info: TS GENERAL SEMICONDUCTOR i>F| 3^105^0 DDDE0S3 =1 |~~ f 3918590 GENERAL S EMI CON DU CT OR General ^ Semiconductor Industries, Inc. 95D 02053' D ' AC POWER & TELEPHONE/ MODEM PROTECTOR 120KMP1 120KMP2 • D U B B ITI COMPHWY - 3.0" 15A Circuit Breaker Female

Contextual Info: GENERAL SEMICONDUCTOR 3918590 GENERAL ~7 Ë ^ B 'ilñ S 'íD 72C 01936 SEMICONDUCTOR General Semiconductor Industries, Inc• D Ë ]| □ 0 D l c1 3 t i 7 7^ 3 2 -4 5 - _ NPN TRANSISTOR C H IP g q U H H E D COM PANY “ T y p ic a l D evice Types: 2 N 6 92 0, 2N6921

taig

Abstract: VE60 2N5218 TWX910-950-1942
Contextual Info: ISÖUARE D CO/ GENERAL *¡5 GENERAL S EMI CONDUCT OR 3918590 j> General ^ Semiconductor « Industries, Inc. m ÖSESSGÖ D u o e i n a 95D 02 119 D S Q U A R E Ti COMPHNV NPN SWITCHING POWER TRANSISTORS This unique device utilizes General Semiconductor Industries’ C 2R process which

Contextual Info: GENERAL SEMICON DUC TOR TS D eT | 3T 105^-0 DOOSOEfl 95D 0 2 0 2 8 3918590 GENERAL SEMICONDUCTOR General ^ Semiconductor Industries,Inc. Tr a ns Zo r b TRANSIENT VOLTAGE SUPPRESSORS SAC5.0 SQUHRE TÌ COMPHWY THRU SAC50 _ MAXIMUM RATINGS 500 Watts Peak Pulse Power

te 02214

Abstract: XGSR5035 XGSR5040 TWX910-950-1942 XGSR5030
Contextual Info: SßUARE » CO/ SS GENERAL 3918590 GENERAL » • ÜG022m SEMICONDUCTOR General Sem iconductor « Industries, Inc. ^ ÖS255GÖ 95D 5 02214 C 2R.„ XGSR5030 XGSR5035 XGSR5040 S O U H B B H COMPRNY T- 3 3 -/3 NPN SW ITCHING POWER TRANSISTORS This unique series utilizes General Semiconductor Industriès' C 2R * process which

Contextual Info: "73 GENERAL SEMICONDUCTOR DË"| 3=1105^0 -Oüdl'lB'l H | ~ 3918590 GENERAL SE MI CO N DU CT OR . ^ 72C 01939 D " 7 '-3 3~¿><T ik . General Semiconductor Industries, Inc. S q U H R E n COMPANY Typical Device Types: 2N6249-2N6251, 2N6338-2N6341, GSTU30020

XGSR50020

Abstract: TWX910-950-1942 GENERAL SEMICONDUCTOR
Contextual Info: S JIJARE D CO/ G EN ER A L 3918590 v TS D • ñSaSSOñ 0005217 GENERAL SEMICONDUCTOR General ^ Semiconductor ,> Industries, Ine • fl 95D 0 2 2 1 7 CR, XGSR50020 S P U R R E T I CDM PRNY nr- 3 J - / J NPN SW ITCH ING POW ER TRA N SISTO R S This unique device utilizes General Semiconductor Industries’ C2R process which

gex 15a

Abstract: GEZ 55A
Contextual Info: GENERAL SEMICONDUCTOR 3918590 G EN ER AL ~^5 95D SEMICONDUCTOR DE I Bci l ñ S ,i D 000E033 02033 SURFACE MOUNT ^ General ^ Semiconductor • Industries, Inc, T ra n s Z o rb SMC SERIES 5.0 THRU 170.0 VOLTS 1500 WATTS 5 Q U H H E n CD M PHN Y UNIDIRECTIONAL

Sprague extralytic

Abstract: 2N6981A 2N6920 2N6920A 2N6921 2N6921A 2N6980 2N6980A 2N6981 Extralytic 600
Contextual Info: - Sß UARE » CO/ GENERAL ^ 3 9 1 8 5 9 0 GENERAL D • ÔS 2 S S 0 Ô Q0021Sb SEMICONDUCTOR General ^ ^ Semiconductor i^L « Industries, Ine• 95D 02156 ^ HIGH POWER NPN 3 2N6920, 2N6920A 2N6921,2N6921A 2N6980, 2N6980A 2N6981,2N6981A S Q U H H E TÌ COMPANY

Sprague extralytic

Abstract: 2N6925A 6924a 2N6925 2N6924 2N6924A IRF9130 VP1206N1 tvs diode stacking Reliability, Inc VP12
Contextual Info: SßUÄRE D CO/ 3918590 GENERAL GENERAL ÖSESSDfi SEMICONDUCTOR General 3^* Semiconductor ^ « Industries, Inc. HIGH POWER NPN DDD21bb 95D 02166 2N6924 2N6924A 2N6925 2N6925A « Q U H R B T I COMPANY Switch P/US !/!TRANSISTORS These NPN silicon transistors offer an unprecedented combination of speed and ruggedness

ESDA-12

Abstract: ESDA-10 ESDA-30 MPTE tucker ESDA-15 1N5629 1N5907 DDD200S ESDA-50
Contextual Info: IS SÛ UA RE D CO/ G E N E R A L 3918590 GENERAL SEMICONDUCTOR General ^ ^ Semiconductor ^ • Industries, Inc. D • 95D ^ FEATURES • 3600 waits Peak Pulse Power dissipation 8x 20 impulse • Availableinrangesfrom5.0to50 volts • Zero Inductance structure

c 3421 transistor

Abstract: GSRU20040 2n6924 gsru200 2N2891
Contextual Info: Basic Characteristics All NPN silicon bipolar power switching transistors manufactured by General Semiconductor Industries, Inc. are available in die or wafer form. General Semiconductor provides as a minimum for every chip order: A. 100% electrical probe test to low current parameters 15A max. .

TL181

Abstract: transzorb DLZ-5A transzorb symbol DLZ-12 DLZ-12A DLZ-13C DLZ-17 DLZ-19C DLZ-24
Contextual Info: SÛUARE » „3918590 CO/ GENERAL ÔS2SSGÔ 9 5D GENERAL SEMICONDUCTOR 0GGED03 ü 02003 D LZ-S TH R U 30 SERIES General ^ Semiconductor ^ • Industries, Inc • SQ U AR E T1 COMPHWY DATA LINE Z0RB Tr a n s Z o r b FAMILY T - V2 ~ FEATURES Multiple TransZorb® Array

fjs 500

Abstract: CN400 h d 2001
Contextual Info: ^ General 2^ Semiconductor ^ . Industries, Inc. HIGH POWER NPN Switch P h i / / / TRANSISTORS The GSRU series of NPN transistors is designed for high speed switching systems. This unique series features General Semiconductor Industries’ C2R manufacturing process which provides surface stabilization for high voltage

SWT200K

Abstract: SWT080K J180 GS035
Contextual Info: SÛUARE D CO/ GENERAL ^5 3 9 1 8 5 9 0 GENERAL SEMICONDUCTOR D ÔS2SSDÛ 0G G 20 35 95D 0 2 0 3 5 U N ID IR E C T IO N A L ^ General ^ Semiconductor J^L « Industries, Inc. FEATURES Up to 400A Peak Pulse Current High Holding Current Nanosecond Response Time

GSRU14040

Abstract: ru140
Contextual Info: General Semiconductor Industries, Inc. G S R U 1 40 4 0 tw itc h P faH H HIGH POWER NPN TRANSISTORS The GSRU series of NPN silicon transistors is designed for high speed switching systems. The GSRU14040 features General Semiconductor Industries' C2R manufacturing process to

GSRU15040

Abstract: TWX910-950-1942 General Semiconductor Industries GSRU15030 GSRU15030A GSRU15035 GSRU15035A GSRU15040A QSRU15040 ML3500
Contextual Info: SÛUARE D CO/ GENERAL TS _39J_859Q_GENERAL ^ D • ÔSESSÜâ QQD21Û2 SEMICONDUCTOR 4 95D 02182 GSRU15030 GSRU15030A GSRU15035 GSRU15035A GSRU15040 GSRU15040A General ^ Semiconductor • Industries, Inc • 50UHREnCDM PHW Y 7^33 -/.T ” HIGH POWER NPN S W ltc fl P /U S ^ ttt TRANSISTORS

3A120

Abstract: 3A133 TWX910-950-1942
Contextual Info: SÛUARE D 3918590 GENERAL CO/ GENERAL 15 95D SEMICONDUCTOR Û S2 SS0 Ô 01993 0001 113 P UNIDIRECTIONAL . ^ General Semiconductor « Industries, Inc. FEATURES T hyZorb T RA N SIEN T VOLTAGE SU P P R E S S O R S S D U H R E TÌ C O M P A N Y APPLICATION

JS 027

Contextual Info: General ^ 2^ Semiconductor ^ » Industries, Inc. G S TU 10030 G STU 10035 G STU 10040 fw/tcA P/tt$ TRANSISTORS HIGH POWER NPN The GSTU10040 series of NPN silicon transistors is designed for high speed switching systems. This unique series features General Semiconductor Industries’ C2R®