GENERAL SEMICONDUCTOR MARKING SJ Search Results

VISHAY MARKING CODE

Abstract: Vishay DaTE CODE GENERAL SEMICONDUCTOR MARKING EG SMB Part marking MBL104S
Contextual Info: PDD Marking www.vishay.com Vishay General Semiconductor PDD Marking AXIAL MARKING Package: DO-204AL/DO-204AC/DO-201AD/GP20/1.5KE/P600 Examples: Polarity Cathode Band Part Number P6KE22 621X GP15M 0621X Logo/ Date Code 1.5KE15A 0621X 1N6275A Cathode Band

GENERAL SEMICONDUCTOR MARKING SJ SMA

Abstract: VISHAY MARKING SJ VISHAY MARKING SJ SMA Vishay diodes code marking bys 025 tvs SMC MARKING VISHAY MARKING CODE TVS AE SMA SMC MARKING SJ MR06X
Contextual Info: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Package: DO-204AL/DO-204AC/DO-201AD/GP20/1.5KE/P600 Examples: Polarity Cathode Band Part Number P6KE22 621X GP15M 0621X Logo/ Date Code 1.5KE15A 0621X 1N6275A Cathode Band Vishay Part Number

B12 GDM

Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Contextual Info: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL

GENERAL SEMICONDUCTOR MARKING mJ SMA ED

Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Contextual Info: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)

Contextual Info: FCPF190N60_F152 N-Channel SuperFET II MOSFET 600 V, 20.2 A, 199 mΩ Features Description ® ® SuperFET II MOSFET is Fairchild Semiconductor ’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior

Contextual Info: FCD380N60E N-Channel SuperFET II MOSFET 600 V, 10.2 A, 380 mΩ Description Features ® ® SuperFET II MOSFET is Fairchild Semiconductor ’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conduction loss, provide superior

Contextual Info: FCA47N60 / FCA47N60_F109 N-Channel SuperFET MOSFET 600 V, 47 A, 70 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology

Contextual Info: FCH47N60N N-Channel SupreMOS MOSFET 600 V, 47 A, 62 m Features Description o The SupreMOS® MOSFET is Fairchild Semiconductor®’s next generation of high voltage super-junction SJ technology employing a deep trench filling process that differentiates it from

Contextual Info: FCPF380N60_F152 N-Channel SuperFET II MOSFET 600 V, 10.2 A, 380 mΩ Features Description • 650 V @TJ = 150°C SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior

Contextual Info: FCPF380N60E_F152 N-Channel SuperFET II MOSFET 600 V, 10.2 A, 380 mΩ Features Description ® ® SuperFET II MOSFET is Fairchild Semiconductor ’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior

Contextual Info: FCH47N60F N-Channel SuperFET FRFET® MOSFET 600 V, 47 A, 73 m Features Description • 650 V @TJ = 150 C SuperFET® MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance.This technology

fcu900n60z

Contextual Info: FCU900N60Z N-Channel SuperFET II MOSFET 600 V, 4.5 A, 900 mΩ Features • 675 V @TJ = Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conduction loss, provide superior

Contextual Info: FCH072N60F N-Channel SuperFET II FRFET® MOSFET 600 V, 52 A, 72 mΩ Features Description ® ® SuperFET II MOSFET is Fairchild Semiconductor ’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conduction loss, provide superior

Contextual Info: FCH104N60F N-Channel SuperFET II FRFET® MOSFET 600 V, 37 A, 104 mΩ Features Description ® ® SuperFET II MOSFET is Fairchild Semiconductor ’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conduction loss, provide superior

FCA76N60N

Abstract: SJ 76 A DIODE
Contextual Info: FCA76N60N N-Channel SupreMOS MOSFET 600 V, 76 A, 36 mΩ Features Description • RDS on = 28 mΩ (Typ.)@ VGS = 10 V, ID = 38 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s next • Ultra Low Gate Charge (Typ. Qg = 218 nC) generation of high voltage super-junction (SJ) technology

Contextual Info: FCA16N60N N-Channel SupreMOS MOSFET 600 V, 16 A, 199 mΩ Features Description • RDS on = 170 mΩ (Typ.) @ VGS = 10V, ID = 8 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from

FCD4N60

Contextual Info: FCD4N60 N-Channel SuperFET MOSFET 600 V, 3.9 A, 1.2 Ω Features Description • 650V @TJ = 150°C SuperFET® MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching

Contextual Info: FCI25N60N_F102 N-Channel SupreMOS MOSFET 600 V, 25 A, 125 mΩ Features Description • RDS on = 107 mΩ (Typ.)@ VGS = 10 V, ID = 12.5 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction (SJ) technology

FCPF400N60

Abstract: fairchild FCPF400N60
Contextual Info: FCPF400N60 N-Channel SuperFET II MOSFET 600 V, 10 A, 400 mΩ Features Description • 650 V @TJ = 150°C SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conduction loss, provide superior

SERDES

Abstract: fch47n60n 511 MOSFET
Contextual Info: FCH47N60N N-Channel SupreMOS MOSFET 600 V, 47 A, 62 mΩ Features Description o The SupreMOS® MOSFET is Fairchild Semiconductor®’s next generation of high voltage super-junction SJ technology employing a deep trench filling process that differentiates it from

fcp25n60

Abstract: FCP25N60N
Contextual Info: FCP25N60N_F102 N-Channel SupreMOS MOSFET 600 V, 25 A, 125 mΩ Features Description • RDS on = 107 mΩ (Typ.)@ VGS = 10 V, ID = 12.5 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction (SJ) technology

FCH22N60N

Contextual Info: FCH22N60N N-Channel SupreMOS MOSFET 600 V, 22 A, 165 mΩ Features Description • RDS on = 140 mΩ (Typ.)@ VGS = 10 V, ID = 11 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from

fch47n60nf

Contextual Info: FCH47N60NF N-Channel SupreMOS FRFET® MOSFET 600 V, 45.8 A, 65 mΩ Features Description • 650 V @TJ = 150 The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction SJ technology employing a deep trench filling process that differentiate it from

General Semiconductor SJ diode

Abstract: FCH47N60F-F133 fch47n60f
Contextual Info: FCH47N60F_F133 N-Channel SuperFET FRFET® MOSFET 600 V, 47 A, 73 mΩ Features Description • 650 V @TJ = 150 °C SuperFET® MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance.This technology