GENERAL SEMICONDUCTOR MARKING UM Search Results

GENERAL SEMICONDUCTOR MARKING mJ SMA ED

Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Contextual Info: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)

Contextual Info: Union Semiconductor, Inc. UM6401P http://www.union-ic.com 6 Line ESD/EMI Protection for Color LCD Interfaces General Description The UM6401P is a low pass filter array with integrated TVS diodes. It is designed to suppress unwanted EMI/RFI signals and provide electrostatic discharge ESD protection in portable electronic equipment. This state-of-the-art

2SC5086FT

Contextual Info: TOSHIBA 2SC5086FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5086FT Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • 1.2 ±0.05 Low Noise Figure, High Gain. N F=l.ldB, |S 2 ie l 2 —lldB f= 1GHz 0.8 ± 0.05 M AXIM UM RATINGS (Ta = 25°C)

2SA1203

Abstract: 2SC2883 A1203
Contextual Info: 2SA1203 TOSHIBA 2 S A 1 203 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY AMPLIFIER APPLICATIONS • • • • 1.7MAX. 0.4 +0.05 + 0.08^ 0.45-0.05 H M AXIM UM RATINGS (Ta = 25°C) SYMBOL RATING CHARACTERISTIC Collector-Base Voltage

2SC3547A

Contextual Info: TOSHIBA 2SC3547A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3547A Unit in mm TV TUNER, UHF OSCILLATOR APPLICATIONS COMMON COLLECTOR • + 0.5 2.5-0.3 Transition Frequency is High and Dependent on Current I- TT,yî > p 11pn fl V M AXIM UM RATINGS (Ta = 25°C)

Contextual Info: UM142XX 300mA, Low Consumption, Wide Input Voltage Linear Regulator UM142XXS SOT23-3 UM142XXY SOT89-3 UM142XXB SOT89-3 General Description The UM142XX series are a group of positive voltage output, high precise, high PSRR and low power consumption voltage regulator. The output voltages are selectable in 100mV steps within a

UAF3000

Contextual Info: Union Semiconductor, Inc. UM5204 http://www.union-ic.com Quad Channel Low Capacitance ESD Protection Diode Array General Description UM5204 are surge rated diode arrays designed to protect high speed data interfaces. This series has been specifically designed to protect sensitive components which are connected to data and transmission lines from

Contextual Info: 1SV313 TOSHIBA 1 SV3 1 3 TOSHIBA DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : Co 5 y / C2.5 y = 2.5 Typ. Low Series Resistance : rs = 0.35 ü, (Typ.) Useful for Small Size Tuner M AXIM UM RATINGS (Ta = 25°C)

Contextual Info: UM5052DA Single Line Bi-directional ESD Protection Diode Array UM5052DA DFN2 0.6x0.3 General Description The UM5052DA ESD protection diode is designed to replace multilayer varistors MLVs in portable applications such as cell phones, notebook computers, and PDA’s. They offer desirable

Contextual Info: UM5079/Q Single Line ESD Protection Diode Array UM5079/Q FBP2 1.0x0.6 /DFN2 1.0×0.6 General Description The UM5079/Q ESD protection diode is designed to replace multilayer varistors MLVs in portable applications such as cell phones, notebook computers, and PDA’s. They feature large cross-sectional area

Contextual Info: UM5080 Low Capacitance Bidirectional Single Line TVS Protection Diode UM5080 DFN2 1.0x0.6 General Description The UM5080 TVS protection diode is designed to replace multilayer varistors MLVs in portable applications such as cell phones, notebook computers, and PDA’s. They feature large cross-sectional

marking zk TVS

Abstract: Signal Path designer Union Semiconductor
Contextual Info: UM5060 Bidirectional Single Line TVS Protection Diode UM5060 SOD523 General Description The UM5060 TVS protection diode is designed to replace multilayer varistors MLVs in portable applications such as cell phones, notebook computers, and PDA’s. They feature large cross-sectional

Contextual Info: UM2302 60V D-S Small Signal MOSFET UM2302S SOT23-3 UM2302P SOT323 General Description The UM2302 is a low threshold N-channel MOSFET, which has low on-resistance, high reliability and stability, as well as fast switch capability and high saturation current. This benefit

Contextual Info: UM5080/H Low Capacitance Bidirectional Single Line TVS Protection Diode UM5080/H DFN2 1.0x0.6/CSP 1.0×0.6 General Description The UM5080/H TVS protection diode is designed to replace multilayer varistors MLVs in portable applications such as cell phones, notebook computers, and PDA’s. They feature large cross-sectional

marking code e3

Abstract: Signal Path designer Union Semiconductor
Contextual Info: UM5079 Single Line ESD Protection Diode Array UM5079 DFN2 1.0x0.6 General Description The UM5079 ESD protection diode is designed to replace multilayer varistors MLVs in portable applications such as cell phones, notebook computers, and PDA’s. They feature large cross-sectional area junctions for

UM5059

Abstract: Signal Path designer Union Semiconductor
Contextual Info: UM5059 Single Line ESD Protection Diode Array UM5059 DFN2 1.0x0.6 General Description The UM5059 ESD protection diode is designed to replace multilayer varistors MLVs in portable applications such as cell phones, notebook computers, and PDA’s. They feature large cross-sectional

Contextual Info: TO SHIBA TENTATIVE HN9C10FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N Q T 1 flFT um • ■ ■ ■ V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • U nit in mm TWO devices are built in to the super-thin and ultra super mini 2.1 ± 0.1

QFN3

Abstract: ESD 141 Signal Path designer Union Semiconductor
Contextual Info: UM5062 Dual Line ESD Protection Diode Array UM5062 QFN3 1.4x1.1 General Description The UM5062 ESD protection diode is designed to replace multilayer varistors MLVs in portable applications such as cell phones, notebook computers, and PDA’s. It features large cross-sectional

SOD523 land pattern

Abstract: Signal Path designer Union Semiconductor
Contextual Info: UM5075 Single Line ESD Protection Diode Array UM5075 SOD523 General Description The UM5075 ESD protection diode is designed to replace multilayer varistors MLVs in portable applications such as cell phones, notebook computers, and PDA’s. It features large cross-sectional

um505

Abstract: Signal Path designer Union Semiconductor
Contextual Info: UM5055 Single Line ESD Protection Diode Array UM5055 SOD523 General Description The UM5055 ESD protection diode is designed to replace multilayer varistors MLVs in portable applications such as cell phones, notebook computers, and PDA’s. It features large cross-sectional

Contextual Info: UM5075 Single Line ESD Protection Diode Array UM5075 SOD523 General Description The UM5075 ESD protection diode is designed to replace multilayer varistors MLVs in portable applications such as cell phones, notebook computers, and PDA’s. It features large cross-sectional

Contextual Info: UM8516 20V P-Channel Power MOSFET UM8516 SOT23-6 General Description The UM8516 is a low threshold P-channel MOSFET with gate to source TVS protection, have extremely low on-resistance. This benefit provides the designer with an extremely efficient device

Contextual Info: UM8515 20V P-Channel Power MOSFET UM8515 SOT23-6 General Description The UM8515 is a low threshold P-channel MOSFET, have extremely low on-resistance. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The devices use a space-saving, small-outline SOT23-6 package.

Contextual Info: UM2301 20V P-Channel Power MOSFET UM2301 SOT23-3L General Description The UM2301 is a low threshold P-channel MOSFET, have extremely low on-resistance. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The devices use a space-saving, small-outline SOT23-3L package.