GENERAL SEMICONDUCTOR SJ DIODE Search Results

Contextual Info: FCP11N60/FCPF11N60 General Description Features SuperFET MOSFET is Fairchild Semiconductor’s first genera-tion of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge

F574

Contextual Info: ui -sj W A National éûk Semiconductor 54F/74F574 Octal D-Type Flip-Flop with TRI-STATE Outputs General Description Features The 'F574 is a high-speed, low power octal flip-flop with a buffered common Clock CP and a buffered common Out­ put Enable (OE). The information presented to the D inputs

Contextual Info: TOSHIBA 1SV216 TOSHIBA VARIABLE CAPACITANCE DIODE TV VHF UHF TUNER AFC SILICON EPITAXIAL PLANAR TYPE 1 SV2 1 6 Unit in mm + 0.2 CHARACTERISTIC Reverse Voltage Peak Reverse Voltage Junction Temperature Storage Temperature Range SYMBOL Vr V rm Tj Tstg RATING UNIT

Contextual Info: TOSHIBA 1SV228 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV 2 2 8 Unit in mm ELECTRONIC TUNING APPLICATIONS OF FM RECEIVERS. • • Low rs : rs = 0.3O Typ. Small Package M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage

Contextual Info: TO SHIBA 1 SV 217 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV2 1 7 CATV TUNING. U nit in mm • High Capacitance Ratio : C 2 V /C 2 5 V = 12.5 Typ. • Excellent C-V Characteristics, and Small Tracking Error. 1.25 • + 0.2 0. -

bcore-an-008P

Abstract: BlueCore6 Selection of i2c eeproms for use with bluecore BC63C159A CS-112584-SP CS-116434-ANP CS-112584-SPP CS-116434-An bcore-an-066P JESD22-A224
Contextual Info: Device Features • ■ ■ ■ ■ ■ Single Chip Bluetooth v2.1 + EDR System Fully qualified Bluetooth v2.1 + EDR Full speed Bluetooth Operation with Piconet and Scatternet Support Best in Class Bluetooth Radio with +8dBm Transmit Power and -90dBm Receive Sensitivity

Contextual Info: January 1988 Semiconductor & MM54HC113/MM74HC113 Dual J-K Flip-Flops with Preset General Description out compatible with the standard 54LS/74LS logic family. All inputs are protected from damage due to static dis­ charge by internal diode clamps to Mqc and ground.

Contextual Info: January 1988 Semiconductor MM54HC113/MM74HC113 Dual J-K Flip-Flops with Preset General Description out compatible with the standard 54LS/74LS logic family. All inputs are protected from damage due to static dis­ charge by internal diode clamps to V cc and ground.

TRANSISTOR J 5804 NPN

Abstract: TRANSISTOR J 5804 TRANSISTOR J 5803 j 5804 transistor 1N6621
Contextual Info: PART NUMBER INDEX ni CR O S E M I CO RP / UIATERTOUN PART NU M BER I N 5614, 1N5615, 1N5616, 1N5617, 1N5618, 1N5619, 1N5620, I N 5622, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, JTXV JTXV JTXV JTXV JTXV JTXV JTXV JTXV 1N5767 1N5802 1N5802, J, JTX, JTXV

Contextual Info: B5817WS/B5818WS/B5819WS Taiwan Semiconductor Small Signal Product SOD-323 20~40V/1A Schottky Diode FEATURES - Low Forward Voltage Drop - Surface mount device type - Moisture sensitivity level 1 - Pb free and RoHS compliant MECHANICAL DATA SOD-323 - Case: Bend lead SOD-323 package

Contextual Info: B5817WS/B5818WS/B5819WS Taiwan Semiconductor Small Signal Product SOD-323 20~40V/1A Schottky Diode FEATURES - Surface mount device type - Moisture sensitivity level 1 - Pb free and RoHS compliant - Low Forward Voltage Drop - General purpose rectification application

transzorb application note

Abstract: TRANSZORB transzorb symbol LCA05C LCA12C LCA15C LCA24C TVS diode line voltage Application Note
Contextual Info: SEMI INSTR/ POWER 5 hE Semiconductor ^ • Industries, Inc. FEATURES J> 30^0137 O G G ^ M 7 0L4 I T - 62-11 LOW CAPACITANCE DIODE ARRAY T ransZ o rb TVS LCA Series APPLICATION • 500 watts peak pulse power The LCDA TVS devices are de­ signed specifically for transient volt­

NA42

Contextual Info: 1SV303 TOSHIBA TENTATIVE TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 303 CATV TUNING • • • U nit in mm High Capacitance Ratio : C%sj! C2 5 V = 17.5 Typ. Low Series Resistance : rs = 1.05Q (Typ.) Useful for Small Size Tuner.

Contextual Info: T O SH IB A 01ZA8.2 TOSHIBA DIODES FOR PROTECTING AGAINST ESD EPITAXIAL PLANAR TYPE 01 Z A 8 . 2 DIODES FOR PROTECTING AGAINST ESD Because two devices are mounted on an ultra compact package, it is possible to allow reducing the number of the parts and the mounting cost.

Contextual Info: Doc No. TT4-EA-11555 Revision. 3 Product Standards Zener Diode DZ2J1300L DZ2J1300L Silicon epitaxial planar type Unit: mm 1.25 0.35 For constant voltage / For surge absorption circuit 0.13 2 • Features 1.7 2.5  Excellent rising characteristics of zener current Iz

Contextual Info: Doc No. TT4-EA-11798 Revision. 3 Product Standards Zener Diode DZ2S1300L DZ2S1300L Silicon epitaxial planar type Unit: mm For constant voltage / For surge absorption circuit DZ2J130 in SSMini2 type package 0.8 0.13 2 • Features 1.2 1.6  Excellent rising characteristics of zener current Iz

U2Z12

Abstract: U2Z13 U2Z15 U2Z16 U2Z18 U2Z20 U2Z22
Contextual Info: T O S H IB A U2Z12~U2Z100 T O SHIBA ZENER DIODE SILICON DIFFUSED TYPE U2Z12-U2Z100 CONSTANT VOLTAGE REGULATION Unit in mm INDUSTRIAL USE TRANSIENT SUPPRESSORS NOISE LIMITTER CATHODE MARK 1 • Average Power Dissipation : P = 2W • Zener Voltage • Surface Mounting Plastic Mold Package

Contextual Info: SBS822 Ordering number : ENA1504 SANYO Semiconductors DATA SHEET SBS822 Low VF Schottky Barrier Diode 20V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • • Low forward voltage (IF=0.5A, VF max=0.39V) (IF=1A, VF max=0.46V).

A1504

Abstract: SBS822 marking SJ
Contextual Info: SBS822 Ordering number : ENA1504 SANYO Semiconductors DATA SHEET SBS822 Low VF Schottky Barrier Diode 20V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • • Low forward voltage (IF=0.5A, VF max=0.39V) (IF=1A, VF max=0.46V).

mp2a5100

Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Contextual Info: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors

Contextual Info: SBS822 Ordering number : ENA1504 SANYO Semiconductors DATA SHEET SBS822 Low VF Schottky Barrier Diode 20V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • • Low forward voltage (IF=0.5A, VF max=0.39V) (IF=1A, VF max=0.46V).

Contextual Info: Light Emitting Diodes LNJ306G5URA Surface Mounting Chip LED S-J Type • Absolute Maximum Ratings Ta = 25°C Parameter  Lighting Color / Lens Color Symbol Rating Unit Power dissipation PD 60 mW Forward current IF 20 mA Pulse forward current * IFP 60 mA

Contextual Info: Light Emitting Diodes LNJ806R58RX Ultra High Bright Surface Mounting Chip LED InGaAIP S-J Type • Absolute Maximum Ratings Ta = 25°C Parameter  Lighting Color / Lens Color Symbol Rating Unit Power dissipation PD 50 mW Forward current IF 20 mA Pulse forward current *

Contextual Info: Light Emitting Diodes LNJ206R5RRX Surface Mounting Chip LED S-J Type • Absolute Maximum Ratings Ta = 25°C Parameter  Lighting Color / Lens Color Symbol Rating Unit Power dissipation PD 60 mW Forward current IF 20 mA Pulse forward current * IFP 60 mA