GERMANIUM AD Search Results

MP3731

Abstract: MP2200A MP3730 O446 Motorola germanium transistor pnp MP2100A MP2000A MP2300A MP2400A germanium transistors PNP
Contextual Info: MP2100A, MP2200A, MP2300A, MP2400A GERMANIUM For Specifications, See MP2000A Data. MP3730 (GERMANIUM) MP3731 5 and 10 AMPERE POWER TRANSISTORS PNP GERMANIUM POWER TRANSISTORS PNP GERMANIUM EPITAXIAL BASE 200-320 VOLTS 56 WATTS PNP Germanium power transistors with the MP3730 designed

ad143

Abstract: ASZ15 ASZ18 AUY37 ASZ16 GT906AM AUY35 AU113 ASZ17 AUY22A
Contextual Info: POWER GERMANIUM PNP Item Number Part Number I C 5 10 20 30 35 40 45 50 60 65 70 -75 80 - 85 90 Min See Index Germanium NthAmerSemi NthAmerSemi CentralSemi NthAmerSemi Germanium See Index See Index Germanium Max .(Hz) ~Y.D~a ~ml 75 250 60 22 25 25 25 32 32

motorola MP2400A

Abstract: MP2100A Motorola germanium transistor pnp MP2200A AN-415 MP2000A MP2300A MP2400A Germanium power
Contextual Info: MP2000A GERMANIUM MP2100A MP2200A MP2300A MP2400A PNP GERMANIUM POWER TRANSISTORS 25 AMPERES ADE POWER TRANSISTORS . . . designed fo r high-voltage switching, and pow er converter 30-120 VOLTS 106 WATTS applications. • A lloy-D iffused Epitaxial Construction

AAY27

Abstract: AAY 45 germanium diode "Germanium Diode" germanium diode junction capacitance Q60101-Y
Contextual Info: AAY27 Germanium RF point-contact diode In addition to a high forward transconductance, the germanium diode AAY 27 displays small switching times and a good detector voltage efficiency at high frequencies. Therefore it is qualified for general purposes in RF as well as switching applications.

nte102

Abstract: NTE103 vpt 20 germanium transistors NPN NTE10-3
Contextual Info: NTE102 PNP & NTE103 (NPN) Germanium Complementary Transistors Power Output, Driver Description: The NTE102 (PNP) and NTE103 (NPN) are Germanium complementary transistors designed for medium–speed saturated switching applications. Features: D Low Collector–Emitter Saturation Voltage:

MR830

Abstract: MP601 germanium power transistors MP600 MP602 MP603 Germanium power
Contextual Info: MP600 GERMANIUM thru PNP Germanium power transistors designed for highcurrent switching applications requiring low saturation voltages, short switching times and good sustaining volt­ age capability. • Alloy Diffused Epitaxial Construction • Low Saturation Voltages —

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC3237TK LOW NOISE WIDE BAND SILICON GERMANIUM MMIC AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The μPC3237TK is a silicon germanium SiGe monolithic integrated circuit designed as low noise amplifier for the

pnp germanium transistor

Contextual Info: zStmi-Conducko'i ZPioduati, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N527 (GERMANIUM) PNP germanium transistor for switching and amplifier applications in the audio-frequency range.

2n2137

Contextual Info: , Una. <£tmL-donctwsto 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE: 973 376-2922 (212) 227-6008 FAX: (973) 3764980 2N2137 (GERMANIUM) PNP germanium industrial power transistors for driver applications in high reliability equipment. MAXIMUM RATINGS

CL10B103KBNC

Abstract: LL1608-FS27NJ ML200C SGL-0163 RF Identification Devices RFID
Contextual Info: SGL-0163 Z SGL-0163(Z) 100MHz to 1300MHz Silicon Germanium Cascadable Low Noise Amplifier 100MHz to 1300MHz SILICON GERMANIUM CASCADABLE LOW NOISE AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-363 Product Description Features

BLM18HE152SN1D

Abstract: BLM18HE152SN CL10B103KB BLM18HE152 CL10B103KBNC SGL0163Z 80013 CL10B103K 9C06031A0R00
Contextual Info: SGL0163Z SGL0163Z 100MHz to 1300MHz Silicon Germanium Cascadable Low Noise Amplifier 100MHz to 1300MHz SILICON GERMANIUM CASCADABLE LOW NOISE AMPLIFIER Package: SOT-363 Product Description Features The SGL0163Z is a high performance SiGe HBT MMIC low noise amplifier

CL10B103KBNC

Contextual Info: SGL0163Z SGL0163Z 100MHz to 1300MHz Silicon Germanium Cascadable Low Noise Amplifier 100MHz to 1300MHz SILICON GERMANIUM CASCADABLE LOW NOISE AMPLIFIER Package: SOT-363 Product Description Features The SGL0163Z is a high performance SiGe HBT MMIC low noise amplifier

Contextual Info: , {Jna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N4277 (GERMANIUM) PNP germanium power transistor designed for high current applications requiring high-gain and low saturation voltages.

BLM18HE152SN1D

Abstract: CL10B103KBNC SGL0163Z 800130 SGL-0163 HEMT MMIC POWER AMPLIFIER MMIC SOT 363 marking CODE 81 marking CODE 81 MMIC SOT 363 68 S3V MMIC SOT 363 marking CODE 81 low noise
Contextual Info: SGL0163Z SGL0163Z 100MHz to 1300MHz Silicon Germanium Cascadable Low Noise Amplifier 100MHz to 1300MHz SILICON GERMANIUM CASCADABLE LOW NOISE AMPLIFIER Package: SOT-363 Product Description Features The SGL0163Z is a high performance SiGe HBT MMIC low noise amplifier

pnp germanium transistor

Contextual Info: ^s-mi-donduatoi , fine. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 U.S.A. -526 GERMANIUM) PNP germanium transistor for switching and amplifier applications in the audio-frequency range. MAXIMUM RATINGS

CBC 557 C

Abstract: CBC 557 AF139 1j 400 CBC 557 B TFK AF 72136 72136 p AF 139 germanium-pnp-hf-transistor
Contextual Info: Germanium-PNP-HF-Transistor Germanium PNP RF Transistor Anwendungen: Vor-, Misch- und Oszillatorstufen bis 860 MHz Applications: Pre, mixer and oscillator stages up to 860 M Hz Besondere Merkmale: Features: • Leistungsverstärkung >9 dB • Pow er gain > 9 dB

marking c1g

Abstract: C3K marking marking C3Z
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC3242TB 3.3 V, SILICON GERMANIUM MMIC WIDE BAND AMPLIFIER DESCRIPTION The μPC3242TB is a silicon germanium monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.

marking C3Z

Abstract: PC3242TB-E3-A PC3242TB PC3242TB-E3
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3242TB 3.3 V, SILICON GERMANIUM MMIC WIDE BAND AMPLIFIER DESCRIPTION The μPC3242TB is a silicon germanium monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.

AF279

Abstract: tfk transistor germanium-pnp-mesa-hf-transistor AF279 transistor tfk 140 Germanium mesa AF 279 042PF
Contextual Info: Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: V orstufen bis 900 MHz Applications: Pre stages up to 900 MHz Besondere Merkmale: Features: • Passivierte O berfläche • • Leistungsverstärkung 16 dB • Power gain 16 dB

BFU725F

Abstract: JESD625-A germanium rf transistor code marking s20 TRANSISTOR germanium transistor germanium transistors NPN SOT343F germanium transistor npn LNB ka band Germanium power
Contextual Info: BFU725F NPN wideband silicon germanium RF transistor Rev. 01 — 6 December 2007 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

AF280

Abstract: germanium-pnp-mesa-hf-transistor oszillator Germanium mesa AF 280 042PF
Contextual Info: Nicht für Neuentwicklungen Not for new developments AF 280 Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: Misch- und O szillatorstufen bis 900 MHz Applications: M ixer and oscilla to r stages up to 900 MHz Besondere Merkmale:

BFU790F

Abstract: JESD625-A Germanium power
Contextual Info: BFU790F NPN wideband silicon germanium RF transistor Rev. 1 — 22 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

JESD625-A

Abstract: BFU710F DRO lnb Germanium power
Contextual Info: BFU710F NPN wideband silicon germanium RF transistor Rev. 1 — 20 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

PC2710TB

Abstract: ro4003 PC3223TB marking c3j
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3236TK 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The μPC3236TK is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.