GERMANIUM TR AMP Search Results

MA7805

Abstract: Transistor 2n2307 K1202 2SK19GR 2SK19Y 2N3406 DG-34 transistor ns800 Dh-37 C682A
Contextual Info: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD EFFECT TR A N SIST O R S 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

NESG210719

Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG210719 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 19, 1608 PKG FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification • High breakdown voltage technology for SiGe Tr.

Contextual Info: CENTRAL SEMICONDUCTOR de Influa oooo 3M7 5 2N404A c e n tr a l SeEMcoEftdigctor Corp. Central Semiconductor Corp. Central Semiconductor Corp. Central Semiconductor Corp. 145 Adams Avenue Hauppauge, New York 11788 GERMANIUM TRANSISTOR JEDÉC TO - 5 CASE

NEC semiconductor

Abstract: NEC JAPAN marking NEC rf transistor nec npn rf NESG210719 NESG210719-T1 transistor RF S-parameters NEC D7
Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG210719 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 19, 1608 PKG FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification • High breakdown voltage technology for SiGe Tr.

NESG210719

Abstract: NESG210719-T1
Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG210719 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 19, 1608 PKG FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification • High breakdown voltage technology for SiGe Tr.

MPS06

Abstract: 2N21 MP500 MP504 MP506 TNR*G MP501 MP502 MP505 Germanium power
Contextual Info: MP500 ri.ru MP502 GERMANIUM MP504 thru MP506 PN P germ anium power tr a n sisto r s for h igh-gain, high-power am p lifier and sw itching applications in high r e lia b ility ind u strial equipment. S T Y L E 1: P IN I. B ASE 3. C O L L E C T O R (C O N N E C T E D T O

free transistor

Abstract: common base amplifier circuit transistor free MC 150 transistor transistor Common Base amplifier "MC 150" transistor germanium transistor pnp S PARAMETERS FOR TRANSISTOR TRANSISTOR ima Germanium Transistor
Contextual Info: EDISW A N MAZDA XAI03 I.F. T R A N SIST O R Germanium PN P Junction Type T E N T A T IV E G EN ER A L The XAI03 is a pnp junction type transistor suitable for use as an I.F. Amplifier at frequencies between 250 and 500 Kc/s where the closer parameter control of the X A IO I is

NTE105

Abstract: TO36 package pnp germanium to36 Germanium power
Contextual Info: NTE105 Germanium PNP Transistor Audio Power Amp Description: The NTE105 is a germanium PNP power transistor in a TO36 type package designed for use in power switching and amplifier applications. Absolute Maximum Ratings: Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V

2N1536

Abstract: 2n1547 2N1544 2N1545 2n1540 2N1533 2N1537 2N1542 2n1541 2N1535
Contextual Info: TYPES 2N1529 THRU 2N1548 P-N-P ALLOY-JUNCTION GERMANIUM POWER TRANSISTORS §m s* i s PS FOR HIGH-POWER SWITCHING g% AND AMPLIFIER APPUCATIONS §% M z o < m m ech an ical d a ta g These transistors are in precision welded, hermetically sealed enclosures.The mounting base provides an

free transistor

Abstract: germanium transistor pnp MC 150 transistor small signal germanium transistor transistor siemens ss germanium pnp pnp transistor oscillator circuit equivalent transistor rf Germanium Transistor S parameters of RF transistor
Contextual Info: E D I SW A N MAZDA XAI04 R.F. T R A N SIST O R Germanium PN P Junction Type T E N T A T IV E G EN ERA L The X A I0 4 is a pnp junction type transistor suitable for use as a frequency changer and or oscillator on the medium and long wave bands where the closer parameter control of

marking r5s

Contextual Info: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4
For high power amplifiers
Ideal for low phase noise oscilators
Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz
Gold metallization for high reliability

80mAF

Abstract: 6069 marking
Contextual Info: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability

TA 8644

Abstract: BFP690 SCT595 GMA marking
Contextual Info: BFP690 NPN Silicon Germanium RF Transistor 4 Preliminary data 5
For medium power amplifiers
Maxim. available Gain Gma = 17 dB at 1.8 GHz 3
Gold metallization for high reliability 2
70 GHz fT - Silicon Germanium technology 1 VPW05980 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFP650 noise figure

Abstract: data sheet germanium diode germanium transistors NPN npn germanium BFP650
Contextual Info: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4
For high power amplifiers
Ideal for low phase noise oscilators
Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz
Gold metallization for high reliability

2N2545

Abstract: 2N2547 2N25M 2N1042 2n2042 2N2560 2n2564 2N2565 2N2563 2N1045
Contextual Info: TYPES 2N1042, 2N1043, 2N1044, 2N1045 • 2N2560, 2N2561, 2N2562, 2N2563 • 2N2564, 2N2565, 2N2566, 2N2567 P-N-P ALLOY-JUNCTION GERMANIUM MEDIUM-POWER TRANSISTORS 90 a H sm sH a Guaranteed l CEx of 85 °C 4 0 -, 60-, 80-, or 100-V0LT UNITS 20 WATTS AT 25'C CASE TEMPERATURE

BFP650

Contextual Info: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz • Gold metallization for high reliability

gummel

Abstract: oscilators BFP650
Contextual Info: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz • Gold metallization for high reliability

transistor 1T

Abstract: BFP650 equivalent
Contextual Info: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4
For high power amplifiers
Ideal for low phase noise oscilators
Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz
Gold metallization for high reliability

NKT677

Abstract: NKT612 ORP12 sft353 GEX34 1/equivalent transistor ac127 OC171 equivalent AD149 NKT275 ac128
Contextual Info: CONTENTS p ag e Mazda Range of Audio Transistors 2 Recommended Line-ups for Audio Amplifiers 3 Key to Symbols 4 Do’s and Dont’s 6 Device Data 7 European Nomenclature 34 Device Identification 35 Comparables List 47 Replacing Selenium Rectifiers 62 Replacing Valve Rectifiers

2N1038

Abstract: 2n2553 2N1040 2N1041 2n1039 2N2552 2N2557 ti 2N2553 2N2556 2N1036
Contextual Info: TYPES 2N1038, 2N1039, 2N1040, 2N1041 • 2N2552, 2N2553, 2N2554, 2N2555 • 2N2556, 2N2557, 2N2558, 2N2559 P-N-P ALLOY-JUNCTION GERMANIUM MEDIUM-POWER TRANSISTORS M3 I 5s :0B Zssp Guaranteed 4 0 -, 60 -. 8 0 -, or lOO-VOLT UNITS 20 WATTS AT 259C CASE TEMPERATURE

PH marking code

Contextual Info: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability

Contextual Info: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability

BFP650

Abstract: BGA420 T-25
Contextual Info: BFP650 NPN Silicon Germanium RF Transistor* • For high power amplifiers 3 • Ideal for low phase noise oscilators 2 4 • Maxim. available Gain Gma = 21 dB at 1.8 GHz 1 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT- Silicon Germanium technology

Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG204619 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 11.0 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz