GERMANIUM TRANSISTOR AC 132 Search Results

germanium transistor ac 128

Abstract: transistor ac 127 AC127 valvo ac128 valvo transistoren transistor ac 132 germanium transistor ac 132 transistor ac 128 ac 127
Contextual Info: N ICH T FÜR N E U E N T W IC K L U N G E N AC 127 GERMANIUM - NPN - NF - TRANSISTOR ftir Endstufen, in Verbindung mit AC 128 oder AC 132 als komplementäres Paar Mechanisehe Daten; Gehäuse: Metall, JEDEC TO-1, 1 A 3 DIN 41 871 Alle Elektroden sind vom Gehäuse isoliert*

transistor ac 132

Abstract: valvo valvo transistoren AC132 germanium transistor ac 132 germanium transistoren AC127 transistor ac 127 127AC valvo transistor
Contextual Info: N I C H T FÜR N E U E N T W I C K L U N G E N AC 132 GERMANIUM - PNP - NF - TRANSISTOR für Endstufen, als Transistorpaar für Gegentakt-B-Schaltungen, in Verbindung mit AC 127 als komplementäres Paar Mechanische Daten: Gehäuse : Metall, JEDEC TO-lt 1 A 3 DIN 41 871

rca transistor manual

Abstract: rca case outlines diode 1N539 2N301 2N140 transistor bf 175 rca thyristor manual drift-field 2N1637 transistor rca 2n173
Contextual Info: RCA Transistor Manual T h is book has been prepared to assist those who work or experiment with semi­ conductor devices and circuits. It will be useful to engineers, service technicians, edu­ cators, students, radio amateurs, hobbyists, and others technically interested in transis­

NKT677

Abstract: NKT612 ORP12 sft353 GEX34 1/equivalent transistor ac127 OC171 equivalent AD149 NKT275 ac128
Contextual Info: CONTENTS p ag e Mazda Range of Audio Transistors 2 Recommended Line-ups for Audio Amplifiers 3 Key to Symbols 4 Do’s and Dont’s 6 Device Data 7 European Nomenclature 34 Device Identification 35 Comparables List 47 Replacing Selenium Rectifiers 62 Replacing Valve Rectifiers

kt420

Abstract: ac176 CV7002 bc109 Transistor Equivalent list BSY95A diffused alloy BC146 BCY70 asy26
Contextual Info: Introduction This summary contains abridged information on the range of NKT semiconductor products, and the five main product groups are listed below. a HYBRID MICROCIRCUITS b) SILICON TRANSISTORS c) DIODES AND ANCILLIARY DEVICES d) GERMANIUM TRANSISTORS

TFK 404

Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
Contextual Info: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317

transistor cross reference

Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
Contextual Info: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC

Contextual Info: BFP620 NPN Silicon Germanium RF Transistor 3 4
High gain low noise RF transistor
Provides outstanding performance for a wide range of wireless applications 2
Ideal for CDMA and WLAN applications
Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 VPS05605

BFP620

Abstract: BFP620 acs BFP620 applications note GFT45
Contextual Info: BFP620 NPN Silicon Germanium RF Transistor 3 4
High gain low noise RF transistor
Provides outstanding performance for a wide range of wireless applications 2
Ideal for CDMA and WLAN applications
Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 VPS05605

Contextual Info: BFP620 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz

BFP620

Contextual Info: BFP620_E7764 NPN Silicon Germanium RF Transistor 3 4
High gain low noise RF transistor
Provides outstanding performance for a wide range of wireless applications 2
Ideal for CDMA and WLAN applications
Outstanding noise figure F = 0.7 dB at 1.8 GHz

transitor RF 98

Abstract: BFP620 applications note germanium transistor ac 128 BFP620
Contextual Info: BFP620 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz

MDA920A4

Abstract: full wave controlled rectifier using RC triggering circuit Triac motor speed control Speed control of dc motor using TL494 OPTO TRIAC moc 3041 CIRCUITS BY USING 2N6027 zero crossing opto diac sprague 11z13 MOC3011 soft start ua1016b
Contextual Info: SECTION 6 APPLICATIONS Edited and Updated PORTION OF WAVEFORM APPLIED TO LOAD Because they are reliable solid state switches, thyristors have many applications, especially as controls. One of the most common uses for thyristors is to control ac loads such as electric motors. This can be done either by

transistor marking R2s

Abstract: germanium transistor ac 128 BFP620 BGA420 T-25 RBS INFINEON TRANSISTOR MARKING NK
Contextual Info: BFP620 NPN Silicon Germanium RF Transistor • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz

Contextual Info: BFP620_E6327 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz

BFP620

Abstract: BGA420 T-25 KF 25 transistor AF 2596
Contextual Info: BFP620 NPN Silicon Germanium RF Transistor • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz

Contextual Info: BFP620 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz

transistor 2N4

Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION

transistor C3866

Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor texas ttl 74L505 Transistor C3246
Contextual Info: BID CΚΤ DOLLY L IST L OGO LIST SA F E TY & RELIA ΒL TY ΤΕΚ PIN SYSTE M DIGITA L IC's MEMORIES, MOS CMOS .EC L , TT L MICR OP R OC E SSOR SPE CIA L FUN CTION IC's DIGITAL l LINE AR K ARR AYS LIN E A R IC's (PUR CH ) ΤΕΚ-MADE IC's IC's INDEX (COL ORE D PGS)

TCA160

Abstract: BY164 Mullard C296 TAA310A TAA435 TAA700 TBA550 TBA480 PCC88 TAA300
Contextual Info: MULLARD DATA BOOK 1973-74 ER R A TA A U G U S T 1973 j\ 1 d - ^ Mullard Limited Renewal Sales Department Mullard House Torrington Place London WC1E 7HD N / , S E M IC O M D U C Type No. Page No. AC187 13 Correction Delete minus signs to read: *IC = 300m A;

1070 SGS transistor

Abstract: SG16VS
Contextual Info: NBSG16VS 2.5V/3.3V SiGe Differential Receiver/Driver with Variable Output Swing The SG16VS is a Silicon Germanium differential receiver/driver. The device is functionally equivalent to the EP16VS device with much higher bandwidth and lower EMI capabilities. This device may be

LS 2027 audio amp

Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Contextual Info: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3

SG86A

Contextual Info: NBSG86A 2.5V/3.3V SiGe Differential Smart Gate with Output Level Select The NBSG86A is a multi-function differential Logic Gate which can be configured as an AND/NAND, OR/NOR, XOR/XNOR, or 2:1 MUX. This device is part of the GigaComm family of high performance Silicon Germanium products. The device is housed in a

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,