back Tunnel diode
Abstract: mbd1057 DATASHEET TUNNEL DIODE MBD2057-C18 MBD3057 "tunnel diode" chip assembly Tunnel diode MBD1057-E28 tunnel diode application tunnel diodes
Text: Planar Back Tunnel Diodes MBD Series Description Features The MDB series of back (tunnel) diodes are fabricated on germanium substrates using passivated, planar construction and gold metallization for reliable operation up to +110 °C. Unlike the standard tunnel diode IP is minimized
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MIL-PRF-19500
MIL-PRF-35834
back Tunnel diode
mbd1057
DATASHEET TUNNEL DIODE
MBD2057-C18
MBD3057
"tunnel diode" chip assembly
Tunnel diode
MBD1057-E28
tunnel diode application
tunnel diodes
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MBD5057
Abstract: No abstract text available
Text: Planar Back Tunnel Diodes MBD Series Description Features The MDB series of back (tunnel) diodes are fabricated on germanium substrates using passivated, planar construction and gold metallization for reliable operation up to +110 °C. Unlike the standard tunnel diode IP is minimized
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MIL-PRF-19500
MIL-PRF-35834
MBD5057
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Tunnel diode
Abstract: DATASHEET TUNNEL DIODE "tunnel diode" tunnel diode specifications 1N2927 germanium
Text: 1N2927 GERMANIUM TUNNEL DIODE PACKAGE STYLE TO-18 DESCRIPTION: The 1N2927 is Designed for Switching Applications in Industrial and Miitary Applications. MAXIMUM RATINGS IF 500 µA TJ -65 C to +150 C TSTG -65 C to +200 C TSOLD 10 S/250 C O O O O O NONE CHARACTERISTICS
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1N2927
1N2927
S/250
Tunnel diode
DATASHEET TUNNEL DIODE
"tunnel diode"
tunnel diode specifications
germanium
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TUNNEL DIODE
Abstract: 1N3714 germanium TUNNEL DIODE tunnel diode specifications
Text: 1N3714 General Purpose Tunnel Diode 62.39 Diodes Tunnel Diodes General Purpose A. Page 1 of 1 Enter Your Part # Home Part Number: 1N3714 Online Store 1N3714 Diodes General Purpose Tunnel Diode Transistors Enter code INTER3 at checkout.* Integrated Circuits
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1N3714
1N3714
DO-17
com/1n3714
TUNNEL DIODE
germanium TUNNEL DIODE
tunnel diode specifications
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tunnel diode
Abstract: 1N3718 Diode tunnel catalog "tunnel diode"
Text: 1N3718 General Purpose Tunnel Diode 39.00 Diodes Tunnel Diodes General Purpose A. Page 1 of 1 Enter Your Part # Home Part Number: 1N3718 Online Store 1N3718 Diodes General Purpose Tunnel Diode Transistors Enter code INTER3 at checkout.* Integrated Circuits
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1N3718
1N3718
DO-17
com/1n3718
tunnel diode
Diode tunnel catalog
"tunnel diode"
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1N3712
Abstract: Tunnel Diode tunnel diodes
Text: 1N3712 General Purpose Tunnel Diode 59.00 Diodes Tunnel Diodes General Purpose A. Page 1 of 1 Enter Your Part # Home Part Number: 1N3712 Online Store 1N3712 Diodes General Purpose Tunnel Diode Transistors Enter code INTER3 at checkout.* Integrated Circuits
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1N3712
1N3712
DO-17
com/1n3712
Tunnel Diode
tunnel diodes
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1N3716
Abstract: tunnel diodes LM390
Text: 1N3716 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 1N3716 Availability Online Store
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1N3716
1N3716
DO-17
STV3208
tunnel diodes
LM390
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1N3716
Abstract: diode germanium tu 38 f 1N3717 1N3714 1N3712 IN3712 diode germanium tu 38 e 1n3719 1N3715 1N3713
Text: Germanium Power Devices Corp. 1N3712-20 1H3713-21 4 Tunnel Diodes Specifications IN3712 through 1N3720 and 1N3713 through 1N3721 are Germanium Tunnel Diodes offering peak currents of 1.0, 2.2, 4.7,10, and 22 ma. These devices, which make use of the quantum mechanical tunneling phenom
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1N3712-20
1H3713-21
IN3712
1N3720
1N3713
1N3721
1N37131N3721
1N3721
3S47375
000073S
1N3716
diode germanium tu 38 f
1N3717
1N3714
1N3712
diode germanium tu 38 e
1n3719
1N3715
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Tunnel diode
Abstract: DIODE N20 tunnel diodes
Text: TU 410/5, 410/10 P-Germanium tunnel diodes Tunnel diodes of the series 410 are particularly designed for use as high-speed switching diodes for counting and triggering applications up into the GHz range. Built into coaxial ceramic microwave cases these diodes are available in 2 groups
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Q62701-E34
Q62701-E35
53-n-
Tunnel diode
DIODE N20
tunnel diodes
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GaAs tunnel diode
Abstract: OA625 151050A Gallium Arsenide tunnel diode tunnel diode GaAs tunnel diodes 1125 GE germanium diodes GE 100 v .018
Text: CUSTOM COMPONENTS 1ÖE INC D 2570552 000G021 3 T ^ e n - ts ' SWITCHING DIODES GERMANIUM and GALLIUM ARSENIDE GERMANIUM Part *P VP VF tolerance mV (mV) (pF) Ct (Typ.) (Typ.) (Typ.) (Max.) CCI Tunnel Diodes are designed and characterized for low level, high speed switching applications. Featuring
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155050g
151050g
152050g
155100g
151100g
152100g
155010g
151010g
23HR400BD
GaAs tunnel diode
OA625
151050A
Gallium Arsenide tunnel diode
tunnel diode GaAs
tunnel diodes
1125 GE
germanium diodes
GE 100 v .018
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tunnel diodes
Abstract: germanium diode equivalent tunnel diode germanium TUNNEL DIODE germanium diode tunnel junction diode AEY16 AEY13 AEY15 germanium diode junction capacitance
Text: GERMANIUM T U N N EL DIODES AEYI3 AEYI5 AEYI6 TEN TA TIV E DATA Germanium tunnel diodes for use as low noise microwave am plifiers in S-band. QUICK REFERENCE DATA S-band f Operating frequency AEY13 AEY15 f min. r N s R esisitive cut-off frequency 6.0 8.0 Noise m easure
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AEY13
AEY15
AEY16
IB88331
AEY13-Page
tunnel diodes
germanium diode equivalent
tunnel diode
germanium TUNNEL DIODE
germanium diode
tunnel junction diode
AEY16
germanium diode junction capacitance
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tunnel diode
Abstract: AEY30C tunnel diodes AEY30D TUNNEL AEY30
Text: AEY 30 A, AEY 30 B, AEY 30 C, AEY30D P-Germanium tunnel diodes Tunnel diodes AEY 30 are specially designed fo r use as m icro -w a ve amplifiers. B uilt into coaxial ceramic m icrow ave cases the diodes are sorted according to capacitance and identified by the letters A , B, C or D. Each diode is supplied in a
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AEY30D
Q62701-E12
Q62701
Q62701-E14
Q62701-E21
tunnel diode
AEY30C
tunnel diodes
AEY30D
TUNNEL
AEY30
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tunnel diodes
Abstract: tunnel diode e16 diode tunnel diode DO-7 2.TU
Text: TU 205/5, 205/10, 210/5, 210/10, 220/5, 220/10 P-Germanium tunnel diodes Tunnel diodes of the series TU 205, T U 2 1 0 and TU 220 are particularly designed for use as ultra-high-speed switches. Built into unvarnished glass cases 51 A 2 DIN 41880 D O -7 the diodes are available in 2 groups of maximum current tolerance
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TU210
Q62701
tunnel diodes
tunnel diode
e16 diode
tunnel diode DO-7
2.TU
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tunnel diode General Electric
Abstract: TD261 TD266A TD262A TD261A TUNNEL DIODE TD263 TD-266A TD263AB TD275A
Text: 6 Germanium TYPE TD261,A TD271.A TD262.A TD272.A TD263.A,B TD273,A,B TD264.A TD274.A TD265.A TD275.A TD266.A TD276,A Diodes The General Electric TD261.A through TD266A series o f tunnel diodes are extremely fast, P-Type germanium devices with peak currents o f 2.2, 4.7,' 10, 22, 50 and 100 ma. Among the unusual
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TD261
TD271
TD262
TD272
TD263AB
TD273
TD264
TD274
TD265
TD275
tunnel diode General Electric
TD266A
TD262A
TD261A
TUNNEL DIODE
TD263
TD-266A
TD275A
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MBD3057-C18
Abstract: MBD2057-C18 DIODE e26 back Tunnel diode MBD1057
Text: JMAR BACK TUNNEL DIODES m «|h Frequency Detector Series (To 18 GHz) U L = FEATURES • • • • • Rugged Germanium Planar Construction Excellent Temperature Stability No DC Bias Required Wide Video Bandwidth MIL-STD-19500 & 883 Capability M AXIM UM RATINGS
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MIL-STD-19500
MBD-1057-C18
MBD-1057-T80
MBD-1057-T54
MBD-1057-H20
MBD-1057-E26
MBD-2057-C18
MBD-2057-T80
MBD-2057-T54
MBD-2057-H20
MBD3057-C18
MBD2057-C18
DIODE e26
back Tunnel diode
MBD1057
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MBD3057-C18
Abstract: MBD5057-C18 back Tunnel diode MBD-3057-C18 MIL-STD-195 MBD5057 MBD2057-C18 MBD-1057-C18 MBD1057
Text: PLANAR BACK TUNNEL DIODES m T ^ High Frequency D e te c to r Series (To 18 GHz) IB = oti^ rationS FEATURES • Rugged Germanium Planar Construction • Excellent Temperature Stability • No DC Bias Required • Wide Video Bandwidth • MIL-STD-195 00 & 883 Capability
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MIL-STD-195
MBD-1057-C18
MBD-1057-T80
MBD-1057-T54
MBD-1057-H20
MBD-1057-E26
MBD-2057-C18
MBD-2057-T80
MBD-2057-T54temperature,
MBD3057-C18
MBD5057-C18
back Tunnel diode
MBD-3057-C18
MBD5057
MBD2057-C18
MBD1057
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back Tunnel diode
Abstract: Tunnel Diode tunnel diode application
Text: Detector Overview General Inform ation RF detection is achieved through utilization o f th e nonlinear, current-voltage characteristics o f a semiconducting junction. Two fundamental d ete cto r diode types are used; silicon-based, Schottky barrie r and germanium-based, tunnel o r back diodes.
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Untitled
Abstract: No abstract text available
Text: GERMANIUM TUNNEL DIODE DESCRIPTION: The 1N2927 is Designed for Switching Applications in Industrial and Miitary Applications. PACKAGE STYLE TO-18 .2 3 0 5 64 -.2 0 9 (5 31! DIA. .1 9 5 (4 95) .1 7 8 <4 52) DIA. T MAXIMUM RATINGS .0 3 0 (0.762) M AX. 500 (iA
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1N2927
S/250
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back Tunnel diode
Abstract: "back diode" Germanium power DIODE tunnel MBD back diode
Text: METELICS 11E CORP D I b OS 1 35 2 0 0Ü Q 13 0 3 IRLANAR BACK TUNNEL DIODES i lo w freq u en cy Detector Series (To 2 GHz) FEATURES • • • • • Rugged Germanium Planar Construction Excellent Temperature Stability No DC Bias Required Wide Video Bandwidth
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MIL-STD-19500
-65to+
17dBmCW
MBD-1050-C19
MBD-1050-A20
MBD-1050-T80
MBD-1050-T54
MBD-1050-H20
MBD-1050-E26
MBD-205s
back Tunnel diode
"back diode"
Germanium power
DIODE tunnel MBD
back diode
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tunnel diode
Abstract: germanium
Text: GERMANIUM TUNNEL DIODE DESCRIPTION: The 1N2927 is Designed for Switching Applications in Industrial and Miitary Applications. PACKAGE STYLE TO-18 MAXIMUM RATINGS 5oo mA If Derates @ 3.5 mA/0C Tj -es 0C to + i5 o 0C Ts t g -e5 0c to +2oo 0C Ts o l d io S/25o 0C
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1N2927
S/25o
tunnel diode
germanium
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tunnel diode General Electric
Abstract: 1N3717 1N3716 doppler radar circuit for speed sensing "tunnel diode" oscillator TD-9 General Electric BD400 TUNNEL DIODE tunnel diode high frequency 1N3712
Text: TUNNEL DIODES PACKAGES a APPLICATIONS UHF O scillator Level Detector Peak Se n sin g Frequency Divider C onverter High Speed Logic Sa m plin g C ircuits Detectors M ix e rs Limiter» C o m p re sso rs Pow er M o n ito rs Fast rise time pulse gen e rators A m plitude Discrim inator
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TD400
BD400
tunnel diode General Electric
1N3717
1N3716
doppler radar circuit for speed sensing
"tunnel diode" oscillator
TD-9 General Electric
TUNNEL DIODE
tunnel diode high frequency
1N3712
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Tunnel diode
Abstract: 4525g "tunnel diode" tunnel diodes 7525G D 4515 diode germanium 4515G GERMANIUM TUNNEL DIODE tunnel diode high frequency
Text: TM ^ bF | E 5 7 Ö E S 5 0000D03 2578252 CU ST OM COMPONENTS 1 |~~ T - ö ' 7 - If 9 4 D 00 0 0 3 INC AMPLIFIER DIODES GERMANIUM fro rm RS Part Number GHz Min ohms ohms 7515G 7520G 7525G 7530G 7540G 15 20 25 30 40 (Typ) 75 75 75 75 75 6015G 6020G 6025G 6030G
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0000D03
7515G
7520G
7525G
7530G
7540G
6015G
6020G
6025G
6030G
Tunnel diode
4525g
"tunnel diode"
tunnel diodes
D 4515
diode germanium
4515G
GERMANIUM TUNNEL DIODE
tunnel diode high frequency
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Germanium Power Diodes
Abstract: BD3 tunnel diode Germanium Power Devices
Text: Germanium Power Devices Corp. r— rr— r - - -— :- Specifications BACK DIODES BDl, 2, 3, 4, 5, 6 & 7 are germanium back diodes which make use of the quantum mechanical tunneling phenomenon, thereby attaining a very low forward voltage
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350mv)
Germanium Power Diodes
BD3 tunnel diode
Germanium Power Devices
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1N3716
Abstract: 1N3717 1N3712 tunnel diode General Electric 1N3720 1N3714 1N3713 1N3719 1N3718 1N3712 equivalent
Text: TUNNEL DIODES PACKAGES a APPLICATIONS UHF O scillator Level Detector Peak Se n sin g Frequency Divider C onverter High Speed Logic Sa m plin g C ircuits Detectors M ix e rs Limiter» C o m p re sso rs Pow er M o n ito rs Fast rise time pulse gen e rators A m plitude Discrim inator
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TD400
BD400
1N3712-21
1N3716
1N3717
1N3712
tunnel diode General Electric
1N3720
1N3714
1N3713
1N3719
1N3718
1N3712 equivalent
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