GG32 Search Results

82c53

Abstract: 82c53-5
Contextual Info: 47E SIEMENS D • 053SbDS GG321b4 AKTIENGESELLSCHAF b M SIEG T 5 H ^ \ SAB 82C53 Programmable CMOS Interval Timer S A B 82C53: Com m and W idth 400 ns S A B 82C53-5: Com m and Width 300 ns • Compatible with all S iem e n s and m ost other m icroprocessors

thyristors itt

Abstract: programmable schmitt trigger CA3098 CA309 GG32N circuit diagram of LA 55-P up/IRC 8961
Contextual Info: HARRI S SEMICOND SECTOR 4ÜE D H M302271 GG32nD T-7 H A R R I S Ü R E3HAS 53 3 Programmabl e Schmi tt Tr igger - Wi th Memory Du a l- In pu t Precision Level Detectors August 1 9 9 1 Features D escription • Programmable Operating Current The CA3098 Programmable Schmitt Trigger is a

inductive proximity detector ic

Abstract: OM389B metal detectors IC metal detector diagram PI Proximity Detectors for metal detector PROXIMITY inductive ic OM388B inductive proximity detector with transistor metal detector coil DIAGRAM
Contextual Info: N AMER PHI LIP S/DISCRETE b'ìE J> • ^53^31 GG327S1 432 I IAPX OM388B OM389B HYBRID INTEGRATED CIRCUITS FOR INDUCTIVE PROXIMITY DETECTORS Hybrid integrated circuits intended for inductive proximity detectors in tubular construction, especially the M12 hollow stud. The OM388B is for positive supply voltage and the OM389B is for negative supply

Contextual Info: ADV MI CRO MEMORY bME D Q55752Ö GG3211Ö DflM • PRELIMINARY AMD1) a Advanced Micro Devices Am27LV020/Am27LV020B 2 Megabit (262,144 x 8-Bit) Low Voltage CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Single 3.3 V power supply — Regulated power supply 3.0 V -3 .6 V

philips Transistor Equivalent list

Abstract: BDT91 BY239 LFE15600X D0322 374 erie transistor td7
Contextual Info: N AUER PHILIPS/DISCRETE b^E T> • bbSBTBl GG3227Ô Ü70 H A P X Philips Semiconductors Product specification NPN silicon planar epitaxial microwave . . power transistor L rE I FEA TU R E S Q U IC K R E F E R E N C E DATA • Diffused emitter ballasting resistors

Contextual Info: HARRIS SEMICOND SECTOR 4ÜE D B 43D2271 GG32M20 0 B H A S T HARRIS W ideband Four Quadrant Current Output Analog Multiplier PRELIMINARY August 19 9 1 Description Features • Lo w M ultiplication E r r o r . 1 .5 % • Inp ut B ia s C u rre n t s .

BGY82

Abstract: BGY83 DIN45004B bth 450
Contextual Info: tib S S T B l Philips Semiconductors GG323bG fill H i A PX Product specification BGY82;BGY83 CATV amplifier modules N AMER PHILIPS/DISCRETE FEATURES PIN CONFIGURATION PINNING -SOT115C DESCRIPTION PIN • Excellent linearity • Extremely low noise 1 input

uhf tv booster circuit diagram

Abstract: MSA33S
Contextual Info: AMER PHI LI PS /D IS CR ET E b^E » • ^53=131 GG32SSÔ TES « A P X Philips Semiconductors Preliminary specification Wideband amplifier module OM2081/60 DESCRIPTION A one-stage wideband amplifier in hybrid integrated circuit form on a thirvfilm substrate. The device is intended for use

OM370

Abstract: uhf tv booster circuit diagram OM370A philips om370 philips ferrite core 4b1 113dBuV philips if catv amplifier HYBRID V.H.F./U.H.F. AMPLIFIER
Contextual Info: N AMER PHILIPS/DISCRETE blE D • bbS3*i31 GG32450 flS3 * A P X U M d/U HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER Three-stage wide-band amplifier in hybrid integrated circuit technique on a thin-film substrate, intended for use in mast-head booster-amplifiers, as an amplifier in M A T V and C A T V systems, and as

82C54-2-P

Contextual Info: 47E » m Ö235b05 0G321flfl S • SIEG SIEMENS AKTIENGESELLSCHAF Av* "T-S W ^ y $ t\ SAB 82C54 Programmable CMOS Interval Timer SAB 82C54 up to 8 MHz SAB 82C54-2 up to 10 MHz • C om patible w ith all Siemens and m ost other microprocessors • Six program m able counter modes

ca555

Abstract: CA555C LIMING RELAY LM555C MC1555 harris SE555 CA555 DIP MC1455 NE555 SE555
Contextual Info: HA R R I S S E M I C O N D S E C T O R 4GE D • M 3 0 2 2 7 1 D D 3 S 3 3 4 7 ■ HAS T 1 } H a r r i s C A 5 5 5 , C L A M 5 5 5 5 C 5 5 C , * Timers For Timing Delays & Oscillator Applications in Commercial, Industrial & Military Equipment August 1991 Features

Contextual Info: TOSHIBA TLCS-47E Series TMP47C241 CMOS 4-Bit Microcontroller The 47C241 has 8-bit A/D converter, watchdog timer and serial interface based on the TLCS-47 series. TMP47C241N, TMP47C241M Part N o . ROM RAM 2048 x 8-bit 128 x 4-bit TM P 47C 241N TM P 47C 241M

Contextual Info: TOSHIBA TLCS-900 Series TMP96C031N/F CMOS 16-bit Microcontrollers TMP96C031N/TMP96C031F 1. Outline and Device Characteristics The TMP96C031 are high-speed advanced 16-bit microcon­ trollers developed for controlling medium to large-scale equip­ ment. TMP96C031N comes in a 64-pin shrink DIP; the

Contextual Info: HN29WT800/HN29WB800 Series 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory HITACHI ADE-203-537 Z Preliminary - Rev. 0.0 J u n .14,1996 Description The Hitachi HN29WT800 Series, HN29WB800 Series are 1-Mword x 8-bit/512-kword x 16-bit CMOS Flash Memory with DINOR (Divided bitlineNOR) type memory cells, thatrealize programming and erase

rbbb

Contextual Info: KM416V254DJ ELECTRONICS CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,

Contextual Info: HB56SW864ES-6/7 8,388,608-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-776A Z Rev. 1.0 Apr. 23,1997 Description The HB56SW864ES belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The

cd 7522 cs

Contextual Info: K A 7 5 3 1D Industrial ELECTRONICS BALLAST CONTROL 1C 22 SDIP The KA7531X is a ballast control IC improving power-factor.t The following is the features incorporated in it. It includes PFC control block so that the power-factor can be over 0.99 % and the high voltage at lamp driving block

Contextual Info: HB56UW3273 Series 33554432-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-653 Z Preliminary Rev. 0.0 Sep. 6,1996 Description The HB56UW3273 Series belongs to 8-byte DIMM (Dual in-line Memory Module) family , and has been developed an optimized main memory solution for 4 and 8-byte processor applications. The

mb 8719

Abstract: 004II
Contextual Info: Lucent Technologies Bell Labs Innovations FW100S4R0 and FW150S4R0 Power Modules: dc-dc Converters; 36 to 72 Vdc Input, 4 Vdc Output; 80 W to 120 W Features • Wide input range ■ High efficiency: 82% typical ■ Parallel operation with load sharing ■ Low profile: 12.7 mm 0.5 in.

ADAPT29K

Contextual Info: AD VA N C E D MI CRO DEVICES SflE D • 02S7S25 G032727 7 ■ Am29000 Advanced Micro Devices Streamlined Instruction Processor This amendment adds advanced information commercial AC specifications for 3 3 -M H z Am 29000 . Am29000 is a trademark of Advanced Micro Devices, Inc.

am29f010

Contextual Info: a Am29F010 Advanced Micro Devices 1 Megabit 131,072 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase — Minimizes system level power consumption ■ Compatible with JEDEC-standard commands

Contextual Info: F IN A L a A m 28F 512 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High perform ance ■ — 70 ns m aximum access time ■ ■ CMOS Low pow er consum ption Flasherase Electrical Bulk Chip-Erase

philips ferrite 4b1

Abstract: philips ferrite core 4b1 2G2 capacitor philips 4b1 ferrite uhf vhf booster WEA199 vHF amplifier module OM2063 3s4t
Contextual Info: bbS3^31 Philips Semiconductors DG324T2 205 ^HAPX Product specification Hybrid integrated VHF/UHF wideband amplifier OM2063 N AMER PHILIPS/DISCRETE PIN CONFIGURATION PINNING DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit technology

CLV044

Abstract: 56497
Contextual Info: ZI FINAL Am27C1024 Advanced Micro Devices 1 Megabit 65,536 x 16-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ 100% Flashrite programming — 70 ns ■ Low power consumption — Typical programming time of 8 seconds ■ Latch-up protected to 100 mA from -1 V to