GG3Q Search Results

AM27C128

Abstract: zi11
Contextual Info: ADV MI C RO MEMORY 4 ÔE D 055752Û 003G327 1 «AMD4 T -4 6 -1 3-29 & Advanced Micro Devices Am27C128 16,384 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access tlme-55 ns JEDEC-approved pinout ■ Low power consumption: -1 0 0 pA maximum standby current

Contextual Info: KM416V1200BJ CMOS D R A M ELECTRONICS 1 M x 1 6 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

GG3Q

Contextual Info: Or, Call Customer Service at 1-800-548-6132 USA Only B U R R -B R O W N » E OPA128 1 Difet Electrometer-Grade OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • • ULTRA-LOW BIAS CURRENT: 75fA max LOW OFFSET : SOO^V max

Contextual Info: KM4 1 6C2 5 4 DT CMOS D R AM ELECTRONICS 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,

Contextual Info: KM416V1004BT CMOS D R A M ELECTRONICS 1M x16B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a lamily of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

Contextual Info: Preliminary KM68FU1000, KM68FS1000, KM68FR1000 Family CMOS SRAM 128Kx8 bit Super Low Vcc High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION Process Technology : 0.4 um Full CMOS The KM68FU1000, KM68FS1000 and KM68FR1000 Organization : 128K x 8

Contextual Info: TOSHIBA TC74VHCT08F/FN/FS TOSHIBA CM O S DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VHCT08F, TC74VHCT08FN, TC74VHCT08FS QUAD 2 -INPUT AND GATE The TC74VHCT08 is an advanced high speed CMOS 2INPUT AND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation sim ila r to

SGS30DA060

Abstract: SGS30DA060D
Contextual Info: 3QE D • 7 ^ 2 3 7 QG30bb0 1 ■ '’ ~ P 3 V ? * 5 ' rZZ SCS-THOMSON ^ 7 # s 6 ^ _ S G S 3 0 D A 0 60D c s m ’T j o m s o n NPN DARLINGTON POWER MODULE . POWER MODULE WITH INTERNAL ISOLA­ TION 2500V RMS ■ LOW Rih JUNCTION TO CASE ■ FREEWHEELING DIODE

6N0 953 235

Contextual Info: Preliminary Data Sheet microelectronics group Lucent Technologies Bell Labs Innovations ORCA OR3Cxx 5 V and OR3Txxx (3.3 V) Series Field-Programmable Gate Arrays Features • High-performance, cost-effective, 0.35 nm 4-level metal technology, with a migration plan to 0.25 urn

HXD BUZZER

Contextual Info: N E C ELECTRONICS INC NEC Electronics Inc. fc,7E J> • b457525 OüBTHfil 3TQ « N E C E JUPD78064 Family frfPD78062/063/064/P064 8-Bit, K-Series Microcontrollers With LCD Controller/Driver, UART, and A/D Converter September 1993

Contextual Info: KA2410 Telephone ELECTRONICS INTRODUCTION The KA2410/KA2411 is a bipolar integrated circuit designed for telephone bell replacement. FUNCTIONS • Two oscillators • Output amplifier • Power supply control circuit FEATURES • • • » • • • •

GG3Q

Contextual Info: TOSHIBA TC74VHCT138AF/AFN/AFT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VHCT138AF, TC74VHCT138AFN, TC74VHCT138AFT 3 -T O -8 L IN E DECODER The TC74VHCT138 is an advanced high speed CMOS 3 - TO - 8 LINE DECODER fabricated with silicon gate C2MOS