GHZ MICRO-X PACKAGE Search Results

transistor c 2499

Contextual Info: m AT-41435 Up to 6 GHz Low Noise Silicon Bipolar Transistor H EW LETT PACKARD Features • • • • 35 micro-X Package Low Noise Figure: 1.7 dB typical at 2.0 GHz 3.0 dB typical at 4.0 GHz High Associated Gain: 14.0 dB typical at 2.0 GHz 10.0 dB typical at 4.0 GHz

Contextual Info: ATF-26836 2-16 GHz General Purpose Gallium Arsenide FET Wtinl H E W L E T T W!kM P A C K A R D 36 micro-X Package1 Features High îm a x : 60 GHz typical High Output Power: 18.0 dBm typical Pi <jb at 12 GHz High Gain: 9.0 dB typical Gss at 12 GHz Cost Effective Ceramic Microstrip Package

Contextual Info: MSA-0835, -0836 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers HEW LETT PACKARD Features • • • • 35 micro-X Package1 Usable Gain to 6.0 GHz High Gain: 32.5 dB typical at 0.1 GHz 23.0 dB typical at 1.0 GHz Low Noise Figure: 3.0 dB typical at 1.0 GHz

rf microwave amplifier with S Parameters

Abstract: BA2 capacitor BA11 02238
Contextual Info: BIPOLARICS, INC. Part Number BA2 CASCADABLE SILICON BIPOLAR MONOLITHIC MICROWAVE INTEGRATED AMPLIFIER PRODUCT SPECIFICATION FEATURES: • Wide 3dB bandwidth - DC to 2.7 GHz in ceramic Micro-X - DC to 2.6 GHz in plastic packages • Suitable for 7V systems

ba7 transistor

Abstract: MMIC Amplifier Micro-X Bipolarics BA11 sot-143 rf amplifier
Contextual Info: BIPOLARICS, INC. Part Number BA7 CASCADABLE SILICON BIPOLAR MONOLITHIC MICROWAVE INTEGRATED AMPLIFIER PRODUCT SPECIFICATION FEATURES: • Wide 3dB bandwidth - DC to 2.4 GHz in ceramic Micro-X - DC to 2.0 GHz in plastic packages • Suitable for 5V systems

MMIC Amplifier Micro-X

Abstract: GHZ micro-X Package BA11 rf microwave amplifier with S Parameters 03-198
Contextual Info: BIPOLARICS, INC. Part Number BA3 CASCADABLE SILICON BIPOLAR MONOLITHIC MICROWAVE INTEGRATED AMPLIFIER PRODUCT SPECIFICATION FEATURES: • Wide 3dB bandwidth - DC to 2.7 GHz in ceramic Micro-X - DC to 2.6 GHz in plastic packages • Suitable for 7V systems

BA4 amplifier

Abstract: ba4 RF amplifier
Contextual Info: BIPOLARICS, INC. Part Number BA4 CASCADABLE SILICON BIPOLAR MONOLITHIC MICROWAVE INTEGRATED AMPLIFIER PRODUCT SPECIFICATION FEATURES: • Wide 3dB bandwidth - DC to 3.8 GHz in ceramic Micro-X - DC to 3.6 GHz in plastic packages • Suitable for 7V systems

ATF13136

Contextual Info: ATF-13136 2-16 GHz Low Noise Gallium Arsenide FET WKS% LETT miXM HEW PACKARD 36 micro-X Package1 Features Low Noise Figure: 1.2 dB typical at 12 GHz High Associated Gain: 9.5 dB typical at 12 GHz High Output Power: 17.5 dBm typical Pi dB at 12 GHz Cost Effective Ceramic Microstrip Package

Contextual Info: AVANTEK INC 2DE D avantek • AT-01635 Up to 4 GHz General Purpose Silicon Bipolar Transistor Avantek 35 micro-X Package Features • • • • ll'mibb DGQti4S2 H 22.0 dBm typical Pi ¿b at 2.0 GHz 9.5 dB typical Gi dB at 2.0 GHz High Gain-Bandwldth Product: 7.0 GHz typical

Contextual Info: Who IHEWLETT mL'EM ATF-13736 2-16 GHz General Purpose Gallium Arsenide FET PACKARD 36 micro-X Package1 Features • • • • • High Associated Gain: 9.0 dB typical at 12 GHz High Output Power: 17.5 dBm typical Pi <i b at 12 GHz Low Noise Figure: 1.8 dB typical at 12 GHz

TRANSISTOR 0835

Abstract: AVANTEK MSA-0835 S2112 AVANTEK transistor
Contextual Info: Q avan tek MSA-0835 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Avantek 35 micro-X Package1 Features • • • • Usable Gain to 6.0 GHz High Gain: 32.5 dB typical at 0.1 GHz 23.0 dB typical at 1 .0 GHz Low Noise Figure: 3.0 dB typical at 1.0 GHz

Contextual Info: ATF-13336 2-16 GHz Low Noise Gallium Arsenide FET Whp%H EW LETT mLtíM PACKARD 36 micro-X Package1 Features • • Low Noise Figure: 1.4 dB typical at 12 GHz High Associated Gain: 9.0 dB typical at 12 GHz • High Output Power: 17.5 dBm typical Pi dB at 12 GHz

AT01635

Abstract: AT-01635
Contextual Info: WKSÏÏ HEW LETT 1"EM P A C K A R D AT-01635 Up to 4 GHz General Purpose Silicon Bipolar Transistor 35 micro-X Package Features • • • • 22.0 dBm typical Pi dB at 2.0 GHz 9.5 dB typical Gi dB at 2.0 GHz High Gain-Bandwidth Product: 7.0 GHz typical fr

Contextual Info: a v a n te k MSA-0835 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Avantek 35 micro-X Package1 Features • • • • Usable Gain to 6.0 GHz High Gain: 32.5 dB typical at 0.1 GHz 23.0 dB typical at 1.0 GHz Low Noise Figure: 3.0 dB typical at 1.0 GHz

2SC3583

Abstract: kf 203 transistor BJT BF 167 marking 855 sot 353 2SC4227 2SC5007 2SC5012 NE681 NE68139 NE68118
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) DESCRIPTION

Contextual Info: Features 35 micro-X Package1 Cascadable 50 LI Gain Block • Low Operating Voltage 3.5 V typical Vd • 3 dB Bandwidth: DC to 0.9 GHz • High Gain: 19.0 dB typical at 0.5 GHz • Low Noise Figure: 2.8 dB typical at 0.5 GHz • Cost Effective Ceramic Microstrip Package

GHZ micro-X ceramic Package

Abstract: ATF-10736 ATF-10736-STR ATF-10736-TR1 10736
Contextual Info: 0.5 – 12 GHz General Purpose Gallium Arsenide FET Technical Data ATF-10736 36 micro-X Package Features Description • High Associated Gain: 13.0 dB Typical at 4 GHz The ATF-10736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor

Contextual Info: AVANTEK I NC 20E D 0AVANTEK . • im n b b 000^441 T * >f= „ IB Up to 4 GHz General Purpose Silicon Bipolar Transistor Avantek 35 micro-X Package Features • • • • • 16.0 dBm typical Pi dBat 2.0 GHz 10.5 dB typical Gi dBat 2.0 GHz 2.5 dB typical NFo at 2.0 GHz

Contextual Info: 0.5 – 12 GHz General Purpose Gallium Arsenide FET Technical Data ATF-10736 36 micro-X Package Features Description • High Associated Gain: 13.0 dB Typical at 4 GHz The ATF-10736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor

1820 0944

Abstract: NE68135 ca 4558 NE68130 BJT BF 167 bjt 522 BJT IC Vce 2SC4227 2SC5007 NE681
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz E • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz B • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) s

kf 203 transistor

Abstract: 08E-12 IC 2030 PIN CONNECTIONS bjt 522 DATASHEET OF BJT 547 NE AND micro-X 2SC4227 2SC5007 BF 194 npn transistor NE681
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz E • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz B • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) DESCRIPTION

avantek microwave

Abstract: Avantek rf amplifier MSA-0335 Avantek, Inc. mmic s5 S478
Contextual Info: AVANTEK MSA-0335 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Avantek 35 micro-X Package1 Features • • • • • • GROUND Cascadable 50 Q. Gain Block 3 dB Bandwidth: DC to 2.7 GHz 12.0 dB typical Gain at 1.0 GHz

MSA-0335

Contextual Info: m HEW LETT MSA-0335, -0336 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers PACKARD 35 micro-X Package1 Features • Cascadable 50 Q Gain Block • 3 dB Bandwidth: DC to 2.7 GHz • 12.0 dB typical Gain at 1.0 GHz •

Contextual Info: AVANTEK MSA-0335 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Avantek 35 micro-X Package1 Features • • • • • • Cascadable 50 Q Gain Block 3 dB Bandwidth: DC to 2.7 GHz 12.0 dB typical Gain at 1.0 GHz