GM23C8100A Search Results

Contextual Info: W» LG Semicon. Co. LTD Description Pin Configuration The GM23C8100A high performance read only memory is organized as 1,048,576 x 8 bit Byte Mode or as 524,288 x 16 bit (Word Mode) followed by BHE mode select. The GM23C8100A offers automatic power down controlled by

Contextual Info: GM23C8100A LG Semicon Co.,Ltd. IM x 8 / 512K x 16 B IT C M O S M A SK R O M Pin Configuration Description The G M 28C 8100A high perform ance read only m em ory is organized as 1,048,576 x 8 bit Byte M ode o r as 524,288 x 16 bit (W ord M ode) follow ed by B H E m ode select. The

NA-1335

Abstract: 42-pin D GM23C8100A
Contextual Info: GM23C8100A GoldStar GOLDSTAR ELECTRON CO., LTD. 1M x 8/512K x 16 BIT CMOS MASK ROM Description Pin Configuration The GM 23C8100A high performance read only memory is organized either as 1 ,0 4 8 ,5 7 6 x 8 bit Byte Mode or as 524,288 x 16 bit (Word Mode)

4170A

Abstract: mask ROM Dynamic RAM 4M x 8 71C4400B GM23C410 64K x 8 BIT DYNAMIC RAM Dynamic RAM 64K x 1 static+ram+32kx8 STATIC+RAM+6264
Contextual Info: PRODUCT INDEX DRAM GM71C1000B/BL GM71C4256B/BL GM71C4100B/BL GM71C4100C/CL GM 71C41OOD/DL GM 71C4400B/BL GM 71C4400C/CL GM 71C4400D/DL GM71C S 4800A/AL GM71C(S)4260A/AL GM71C(S)4270A/AL GM 71C(S)4170A/AL GM71C16100A GM71C16400A GM71C17400A GM 71C(S) 16160 A/AL