GN 139 Search Results

LFB32SK

Contextual Info: Filters for Communication Equipment LFB32_SB Series 1210 Frequency Characteristics (1) T J T~l n i 0 8+0 2 (1) IN {2) GN D (3) OU T (4> . GN D 0.4< 0 3 (in mm) ^1 .210.3 ^ Nominal Center Bandwidth (BW) Frequency (fo) (MHz) (MHz) Insertion Loss in BW (dB)

LGU2W271MELB

Abstract: LGU1C103MELA LGU1C103MELZ LGU1C682MELZ LGU1C822MELZ LGU1V682MELZ LGU2F LGU2G LGU2G331MELA
Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS GU Snap-in Terminal Type, Wide Temperature Range series Withstanding 3000 hours application of rated ripple current at 105°C. Adapted to the RoHS directive 2002/95/EC . GU Smaller Low Profile GN GJ Specifications Item Performance Characteristics

LGU2D391MELZ

Abstract: LGU1J682MELB lgu2g101mela 220v .047 uf LGU1C103MELZ LGU1C103MELA LGU1C682MELZ LGU1C822MELZ LGU1V682MELZ LGU1K222MELA
Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS GU Snap-in Terminal Type, Wide Temperature Range series Withstanding 3000 hours application of rated ripple current at 105°C. Adapted to the RoHS directive 2002/95/EC . GU Smaller Low Profile GN GJ Specifications Item Performance Characteristics

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS GU Snap-in Terminal Type, 105 °C Standard series Withstanding 3000 hours application of rated ripple current at 105°C. Compliant to the RoHS directive 2002/95/EC . GW GU High Lipple Current Smaller Low Profile GN GJ Specifications

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS GU Snap-in Terminal Type, 105 °C Standard series Withstanding 3000 hours application of rated ripple current at 105°C. Compliant to the RoHS directive 2002/95/EC . GW GU High Lipple Current Smaller Low Profile GN GJ Specifications

LGU2E221MELY

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS GU Snap-in Terminal Type, 105 °C Standard series Withstanding 3000 hours application of rated ripple current at 105°C. Compliant to the RoHS directive 2002/95/EC . GW GU High Lipple Current Smaller Low Profile GN GJ Specifications

LGU2E561MELC

Abstract: LGU1C103MELA LGU1C103MELZ LGU1C682MELZ LGU1C822MELZ
Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS GU Snap-in Terminal Type, 105 °C Standard series Withstanding 3000 hours application of rated ripple current at 105°C. Compliant to the RoHS directive 2002/95/EC . GW GU High Lipple Current Smaller Low Profile GN GJ Specifications

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS GU Snap-in Terminal Type, 105 °C Standard series Withstanding 3000 hours application of rated ripple current at 105°C. Adapted to the RoHS directive 2002/95/EC . GW GU High Lipple Current Smaller Low Profile GN GJ Specifications

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS GU Snap-in Terminal Type, 105 °C Standard series Withstanding 3000 hours application of rated ripple current at 105°C. Compliant to the RoHS directive 2011/65/EU . GW GU High Lipple Current Smaller Low Profile GN GJ Specifications

F1687

Contextual Info: HWF1687YC HSXAWAVS Medium Power GaAs FET September 1998 Rev.B Features • Output Power • High Gain PidB=31.5dBm typ. @2.4GHz Outline Drawing Gl= 16dB(typ.)@2.4GHz • High Efficiency • High Linearity Unit : £ gn Thickness: 53 i 860 Tladd =45%(typ.)@2.4GHz

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS GU Snap-in Terminal Type, 105°C Standard series Withstanding 3000 hours application of rated ripple current at 105°C. Compliant to the RoHS directive 2011/65/EU . GW GU High Lipple Current Smaller Low Profile GN GJ Specifications

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS GU Snap-in Terminal Type, 105 °C Standard series Withstanding 3000 hours application of rated ripple current at 105°C. Compliant to the RoHS directive 2002/95/EC . GW GU High Lipple Current Smaller Low Profile GN GJ Specifications

me 4920

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS GU Snap-in Terminal Type, 105 °C Standard series Withstanding 3000 hours application of rated ripple current at 105°C. Adapted to the RoHS directive 2002/95/EC . GW GU High Lipple Current Smaller Low Profile GN GJ Specifications

D2061 transistor

Abstract: B1ABCF000176 C1BA00000407 r2003 TRANSISTOR c5536 C1BB00000732 C2068 B0BC7R500001 B1BACD000018 B1AACF000064
Contextual Info: ORDER NO. MD0604120A3 DVD Stereo System SA-VK650GCP Colour S . Silver Type Please use this manual together with the service manual for Model No. [SA-VK650GC/GN/GS/GCS/GCT-S, Order No. MD0604118C3]. Specifications n SYSTEM SC-VK650(GCP) Notes: Music Center: SA-VK650 (GCP)

Contextual Info: 6 7 DRAWI NG MADE THIS DRAWI NG C COPYRI GHT RESERVED. IN THIRD 15 PRODUCT S AMP BY MAY BE 5 4 3 PROJECTION UNPUBLI5HED 19 AMP ANGLE RELEASED F OR COVERED BY U„5„ 19 LOG D I ST RIGHTS AR 35 PUBLICATION I NCORPORATED, HARRI SBURG, PA. AND FOREI GN ALL

CA3290T

Abstract: bipolar zener diodes CA3290 CA3290AE1 CA3290AT CA3290E CA3290AE CA3290BT CA3290B CA3290A
Contextual Info: HARRIS SEniCONt SECTOR hlE t • 4302271 □Q4baS2 7äb H H A S CA3290 gn h a r r is SEMICONDUCTOR M i BiMOS Dual Voltage Comparator with MOSFET Input, Bipolar Output March1993 Description Features The CA3290A and CA3290 types consist of a dual voltage comparator on a single monolithic chip. The common mode

TH 20669

Abstract: TA 8644
Contextual Info: HWF1681YC HEXAWAVE High Power GaAs FET September 1998 Rev. B Features Outline Drawing High Output Power P I <ib = 3 4 . 5dB m typ. @ 2.4G H z High Gain Unit : £ G l = 15dB (typ.)@ 2.4G H z Thickness: 53 \ High Efficiency A ll B ond Pads: gn 5 1 0 0 x 100

LCD tv smp circuit diagram

Abstract: CY8C26233-24PVXI CY8C26443-24PI CY8C26443-24SI CY8C25122 CY8C26233 CY8C26443 CY8C26643 CY8C26443-24SXI
Contextual Info: end m m o c Not Re Des w e N r ed f o xxx 7 2 C 8 e CY s U : s i gn Configurable Mixed-Signal Array with On-board Controller CY8C25122, CY8C26233, CY8C26443, CY8C26643 Device Data Sheet for Silicon Revision D Programmable System-on-Chip PSoC May 17, 2005

Contextual Info: HOLTEK HT1606 LCD Driver Features • • • • O perating voltage: V d d : 4.5~5.5 V e e :-5~-23 V SS=GN D 80 in tern al LC D driver circuits 4-bit d ata form at, bidirectional shift d ata tran sfer • • Stand-by mode to reduce power consum p­ tion

LFB321G61SA1A555

Contextual Info: Filters for Communication Equipment 1LFB31 SP Series 1206 Frequency Characteristics T: (1) (2) (3) (4) IN G ND OUT GN D • All the techn ica l da ta and Inform ation con ta in ed herein are sub ject to cha ng e w ith o u t p rio r notice. Part Number Nominal Center Bandwidth (BW)

Contextual Info: _Technical Data CD54/74AC151 CD54/74ACT151 Advance Information 8-Input Multiplexer Type Features: • Buffered inputs m Typical propagation delay: 6 ns @ l/cc - 5 V, Ta = 25° C, CL = 50 pF vCc = '« GN D = 8 F U N C T IO N A L D lA G R A M '9 2 c 5 ' 3S43l

T1606

Contextual Info: HT1606 HOLTEK r r 80-Segment Dot Matrix LCD Driver Features • • • • • O perating voltage: V dd: 4.5~5.5V V e e :-5—23V VSS=GN D 80 in tern al LC D driver circuits 4-bit d ata form at, bidirectional shift d ata tran sfer • S tan d b y mode to reduce power consum ption

hitachi metals

Abstract: Hitachi DSA002698
Contextual Info: 3216 Size Chip Dual Band Coupler for AMPS/GSM/DCS/PCS SLC-090GN-[ ] HITACHI METALS LC-SLC-090GN-9903A Shape & Size 6 3 1 1 : AMPS/GSM In 3 : AMPS/GSM Out 4 : DCS/PCS In 0.95 0.4 0.4 5 0.4 2 GN 8 4 1 3.2 1 7 1.0 1.6 7 6 4 0.95 Equivalent Circuits 3 6 : DCS/PCS Out

CDQ15

Abstract: COOA EDH816H64C 1024K-BIT
Contextual Info: ELECTRONIC D E S I GN S INC 30E D • 32301m ■ EDI 0dQat.3b 1 ■ ED H 8 1 6 H 6 4 C E t*d ic n le D tilg ra I n c . High Speed Megabit SRAM Module 64Kx16 CMOS, High Speed Programmable, Static RAM Module Features The EDH816H64C Isa 1024K-bit high speed CMOS