GP 132 Search Results

usb flash drive circuit diagram

Abstract: KTC-FC1325N-GP usb flash drive FC1325N FC1325N-GP LQFP48 LQFP-48 samsung confidential
Contextual Info: KTC-FC1325N-GP USB Flash Drive Controller KTC Confidential Key Technology Corp. FC1325N-GP Single Chip USB Flash Drive Controller General Descriptions: The KTC-FC1325N-GP single chip controller is designed for the high capacity and high performance USB Interface Flash Drives. The

GP SERIES RESISTORS

Contextual Info: COMMERCIAL 1/8 WATT TO 2 WATT METAL FILM RESISTORS GP SERIES Precision performance, economical cost! RCD GP Series general purpose color banded metal film resistors are designed to provide MIL performance and reliability, at significant cost savings. FEATURES

Contextual Info: COMMERCIAL 1/8 WATT TO 2 WATT METAL FILM RESISTORS - GP SERIES im» Precision performance, economical cost! RCD GP Series general purpose color banded metal film resistors are designed to provide MIL performance and reliability, at significant cost savings.

GP SERIES RESISTORS

Abstract: 51-Q
Contextual Info: oao COMMERCIAL 1/8 WATT TO 2 WATT METAL FILM RESISTORS • GP SERIES • ■ ■ ■ ■ 8 » - - Precision performance, economical cost! RCD GP Series general purpose color banded metal film resistors are designed to provide MIL perform ance and

E62806

Abstract: KT19 KT21 1 Gp 36 kt26 kulka 600 terminal block
Contextual Info: Double Row Terminal Blocks 100 Series Kulka 670A GP Series 150 Volts AC/DC Class C 106 / 670A GP 06 Specifications: Base, General Purpose Phenolic, 150oC Closed Back Design Screws, #6-32 Binder Head, Phil-Slot, Steel Terminals, Plated Brass 1-36 Poles

Contextual Info: dsPIC33EPXXX GP/MC/MU 806/810/814 and PIC24EPXXX(GP/GU)810/814 16-bit Microcontrollers and Digital Signal Controllers (up to 512 KB Flash and 52 KB SRAM) with High-Speed PWM, USB, and Advanced Analog Operating Conditions Timers/Output Compare/Input Capture

DS70571

Abstract: dsPIC33e family Reference Manual dc 12v to ac 220v simple inverter circuit schema DSPIC33EP512MU810 ieee embedded system projects free DS70356 DS70609 control 220V using Parallel port Fuses class H dspic33ep256mu806
Contextual Info: dsPIC33EPXXX GP/MC/MU 806/810/814 and PIC24EPXXX(GP/GU)810/814 16-bit Microcontrollers and Digital Signal Controllers (up to 512 KB Flash and 52 KB SRAM) with High-Speed PWM, USB, and Advanced Analog Operating Conditions Timers/Output Compare/Input Capture

100AH

Abstract: 100AH battery charging 100ah battery 20HR 121000 GP Batteries gp 332
Contextual Info: Powered by GP 121000 12V 100Ah GP 121000 is a general purpose battery up to 5 years in standby service or more than 260 cycles at 100% discharge in cycle service. As with all CSB batteries, all are rechargeable, highly efficient, leak proof and maintenance free.

GP126

Abstract: 20HR GP12650
Contextual Info: Powered by GP 12650 12V 65Ah GP 12650 is a general purpose battery up to 5 years in standby service or more than 260 cycles at 100% discharge in cycle service. As with all CSB batteries, all are rechargeable, highly efficient, leak proof and maintenance free.

DBMM

Abstract: gp 817 gp 722 GP612
Contextual Info: Powered by GP 6120 6V 12Ah GP 6120 is a general purpose battery up to 5 years in standby service or more than 260 cycles at 100% discharge in cycle service. As with all CSB batteries, all are rechargeable , highly efficient , leak proof and maintenance free.

70616G

Abstract: dsPIC33e family Reference Manual VDR Mu 503 DS70618 DS70571 DS70356 DS70609 DS70600 DSPIC33EP512MU810 DS70616
Contextual Info: dsPIC33EPXXX GP/MC/MU 806/810/814 and PIC24EPXXX(GP/GU)810/814 16-Bit Microcontrollers and Digital Signal Controllers with High-Speed PWM, USB and Advanced Analog Operating Conditions Timers/Output Compare/Input Capture • 3.0V to 3.6V, -40ºC to +125ºC, DC to 60 MIPS

Contextual Info: Du line Dupline Carpark System Type GP 3496 0005 ® Fieldbus • • • • • • • • • • Product Description GP 3496 0005 has been designed as a cost-effective Plug & Play solution for making an interface between Dupline® Carpark and the PC with monitory software.

IN3492

Abstract: sg 4001 diode 1NA4 md914 35C10 1N20b 1n67a 0a202 diode iN3495 1469r
Contextual Info: NIAX VAX U E S 0 2 5 ° D IO D E Vw PRV If Vf IR T Y P E u S E 0A5 100 .3 5 1 .3 30 G GP 0 A6 60 .3 5 1 .3 9 .0 G GP 0A7 30 .2 5 1 .7 6 .0 G SW O A IO 30 1 .0 .9 5 600 G SW OA3I 85 12 0 .7 40 G GP 0A47 30 .1 5 .6 5 10 G 0A70 2 2 .5 . 15 .2 5 30 G RF OA71 90

MC101

Contextual Info: dsPIC33FJ16 GP/MC 101/102 AND dsPIC33FJ32(GP/MC)101/102/104 16-Bit Digital Signal Controllers (up to 32-Kbyte Flash and 2-Kbyte SRAM) Operating Conditions Advanced Analog Features • 3.0V to 3.6V, -40°C to +125°C, DC to 16 MIPS • ADC module: - 10-bit, 1.1 Msps with four S&H

example dsPIC33fj16

Abstract: DSPIC33FJ16MC102 DS70191 DS70187 MPLAB PM3 circuit AD21b DS70192 DS70209 49 pin connector LCD
Contextual Info: dsPIC33FJ16 GP/MC 101/102 AND dsPIC33FJ32(GP/MC)101/102/104 16-Bit Digital Signal Controllers (up to 32-Kbyte Flash and 2-Kbyte SRAM) Operating Conditions Advanced Analog Features • 3.0V to 3.6V, -40ºC to +125ºC, DC to 16 MIPS • ADC module: - 10-bit, 1.1 Msps with four S&H

RD06HVF1

Abstract: 100OHM RD06HVF1-101
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 175MHz,6W OUTLINE DESCRIPTION DRAWING 1.3+/-0.4 9.1+/-0.7 FEATURES 12.3MIN High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz

RD06HHF1-101

Abstract: mosfet HF amplifier RD06HHF1 RD 15 hf mitsubishi 10Turns RD06HHF
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 3.6+/-0.2 2 9+/-0.4 High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz

344C

Abstract: motorola suffix SSOP Case 1317 Suffix A6 Pressure Sensor
Contextual Info: Freescale Semiconductor, Inc. What Are the Pressure Packaging Options? Freescale Semiconductor, Inc. Pressure Sensor Packaging Sizes not to scale UNIBODY BASIC ELEMENT CASE 344 SUFFIX A / D UNIBODY SINGLE PORT CASE 344B SUFFIX AP / GP UNIBODY DUAL PORT

capacitor bipolar

Abstract: capacitor 10 uF x 25v 0.1 uF non polarized capacitor a9476m 25 uF polarized capacitor
Contextual Info: Single Ended GP – Capacitor Bi-Polar Standard Version B42822 Construction Radial leads Non polarized Charge discharge proof Aluminum case with insulating sleeve Stand off rubber seal Case with safety vent from diameter 6,3 mm Features Miniaturized dimensions

A868

Abstract: A5475 A8105 A3107
Contextual Info: Single Ended GP – Capacitors Low Leakage Current B41825 Construction Radial leads Charge discharge proof, polar Aluminum case with insulating sleeve Minus pole marking on case surface Stand off rubber seal Case with safety vent from diameter 6,3 mm Features

MAR 618 transistor

Abstract: MAR 737 transistor d 1557 RD06HHF1 transistor 45 f 123 rf transistor mar 8 MITSUBISHI RF POWER MOS FET RD06HHF1-101 Marking TRANSISTOR 737 transistor MAR 231
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 12.3MIN 2 9+/-0.4 High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz

MAR 618 transistor

Abstract: MAR 737 RD06HVF1 transistor d 1557 transistor mar 618 how to use mos transistor in power circuit rf transistor mar 8 RD06HVF1-101 100OHM MITSUBISHI RF POWER MOS FET
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 12.3MIN 2 9+/-0.4 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz

C103Z

Abstract: 107 16V epcos
Contextual Info: Single Ended GP – Capacitors Low Profile – 105oC B41852 Construction Dimension 4 x 5 mm Charge-discharge proof, polar Aluminum case with insulating sleeve Minus pole marking on case surface Stand off rubber seal Features Low profile Ultra miniaturized dimensions

GP 839 DIODE

Abstract: RD01MUS2 GP 809 DIODE GP 841 Diode MOS FET 1127 RF Transistor s-parameter vhf RD01MUS2-101 t06 TRANSISTOR 5343 transistor transistor M 839
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 4.4+/-0.1 FEATURES •High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz •High Efficiency: 65%typ.