Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC KSB596 IME D | 7^4142 0007502 4 PNP EXITAXIAL SILICON TRANSISTOR — “ T - 3 3 - ^ ;- POWER AMPLIFIER APPLICATIONS • Complément to KSD526 10-220 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Co/lector-Base Voltage
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KSB596
KSD526
GQG77fe
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transistor kt 801
Abstract: S/transistor kt 801 KT 802 transistor a05 801
Text: SAMSUNG S E MI CONDUCTOR INC MJE800/801/802/803 IME O | 7^4145 000770b NPN EPITAXIAL r - 33 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hpE—750 @ lc= —1.5 and -2 .0 A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS TO-126 • Complementary to MJE700/701/702/703
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MJE800/801/802/803
000770b
O-126
MJE700/701/702/703
MJE800/801
MJE802/803
MJEo00/801
GQG77fe
transistor kt 801
S/transistor kt 801
KT 802
transistor a05 801
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Untitled
Abstract: No abstract text available
Text: SAMS UN G SEM ICO ND UC TO R INC MJE170 14E 0 | 7 ^ 4 1 4 2 OOOÎbâT E | PN P EPITAXIAL SILIC O N TRAN SISTO R T " 3 3 - / 7 LO W P O W E R A U D IO A M P L IF IE R LO W CURRENT, HIGH S P E E D SW IT C H IN G A P P LIC A T IO N S A B S O L U T E M A X IM U M R A T IN G S Ta= 2 5 ° C
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MJE170
GQG77fe
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ts 4142
Abstract: ksa634 KSC1096
Text: SAMSUNG SEMICONDUCTOR INC 14E 0 KSA634 42 0007485 fi PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER POWER REGULATOR • Complement to KSC1096 • C ollector Current lc = -2 A • C ollector Dissipation PC=10W Tc =25',C ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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KSA634
KSC1096
GQG77fe
ts 4142
ksa634
KSC1096
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power semi conductor
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR I NC 14É KSA636 | 7 cî k , 4 m 2 0007407 1 PNP EPITÂXIAL SILICON TRANSISTOR T -33-17 LOW FREQUENCY POWER AMPLIFIER » • • • Complement to KSC1098 • High Collector-Base Vbltage V cbo = -70V Collector Current lc = - 2 A Collector Dissipation PC=10W T c =25°C
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KSA636
KSC1098
GQG77fe
power semi conductor
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samsung tv
Abstract: samsung SSE
Text: SAMSUNG SEMICONDUCTOR 14E D |? 1 f c ,4 I 4 Z a a Q 7 t, S i 3 I INC N PN T R IP L E D IF FU SED P L A N A R SIL IC O N T R A N SIST O R KSD5006 — COLOR TV HORIZONTAL OUTPUT APPLICATIONS HIGH Collector-Base Voltage T-S3-13 V Cb o = 1 5 0 0 V ABSOLUTE MAXIMUM RATINGS Ta= 2 5pC
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KSD5006
Ves--800V,
GQG77fe
samsung tv
samsung SSE
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samsung tv
Abstract: No abstract text available
Text: IME D | 7 ^ 1 4 2 G00?fe»71 5 | N PN T R IP L E D IFFU SED P L A N A R SIL IC O N T R A N SIS T O R KSD5014 SAMS UNG S E M I C O N D U C T O R . INC T - 3 3 - 11 V CO LO R TV HORIZONTAL OUTPUT APPLICA TIO N S TO-3P F High Collector-Base Voltage V e » = 1500V
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KSD5014
GQG77fe
samsung tv
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SE MICON DU CT OR MJE171 INC lqE 0 | QOG?^^ 2 | PNP EPITAXIAL SILICON TRANSISTOR T-33-17 LOW FREQUENCY AMPLIFIER LOW CURRENT, HIGH SPEED SWITCHING APPLICATION TO*126 ABSOLUTE MAXIMUM RATINGS Ta= 25 °C Characteristic • Coliector-Base Voltage • Collector-Emitter Voltage
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MJE171
T-33-17
GQG77fe
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diode lt 238
Abstract: samsung tv lt 332 diode samsung SSE
Text: SAMSUNG SEMICONDUCTOR INC KSD5011 im e d I ao a?tta 4 N P N T R IF L t DIFFUSED P L A N A R SIL IC O N T R A N SIS T O R T-33-11 C O L O R TV HORIZONTALNOUTPUT APPLICA TIO N S DAM PER DIO DE BUILT IN TO-3P(F) High Collector-Base Voltage V cbo =1500V A BSO LU T E M A X IM U M RATINGS (Ta=25°C)
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KSD5011
T-33-11
GQG77fe
diode lt 238
samsung tv
lt 332 diode
samsung SSE
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d 331 TRANSISTOR equivalent
Abstract: C 3311 transistor la 4142 74143
Text: SA MSUNG SEM ICO NDUCTOR INC 14E D | 7Tb4142 00071,5*1 4 I NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5010 C o l o r t v h o r iz o n t a l o u t p u t APPLICATIONS DAMPER DIODE BUILT IN High Collector-Bass Voltage VCbo =1500V ABSOLUTE MAXIMUM RATINGS (Ta= 25°C)
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7Tb4142
KSD5010
GQG77fe
d 331 TRANSISTOR equivalent
C 3311 transistor
la 4142
74143
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samsung tv
Abstract: d 331 Transistor
Text: SAMSUNG SEMICONDUCTOR KSC1520 INC 1ME D | V 'lb m ia 0007S40 1 | NPN EPITAXIAL SILICON TRANSISTOR T 33- 07 COLOR TV CHROMA OUTPUT TO-202 • High Collector-Emitter Voltage Vceo=250V • Current Gain-Bandwidth Product fT=80MHz iyp ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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0007S40
KSC1520
80MHz
O-202
GQG77fe
samsung tv
d 331 Transistor
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Untitled
Abstract: No abstract text available
Text: SAMSUNG S E M IC O N D U C T O R INC KSC1098 1ME D | 7^1.4142 0007S33 4 NPN EPITAXIAL SILICON TRANSISTOR ' - 3 5 - c n LOW FREQUENCY AMPLIFIER • • • • Complement to KSA636 Collector-Base Voltage Vcao=7UV Collector Current lc =2 A Collector Dissipation Pc=10W Tc=25<,C
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0007S33
KSC1098
KSA636
GQG77fe
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samsung 217
Abstract: samsung tv NPN Transistor 1A 800V to - 92 ksd5002
Text: SAMSUNG SEMICONDUCTOR 14E INC D 7^4142 0QQ7t41 7 KSD5002 "T-33-13 COLOR TV HORIZONTAL OUTPUT APPLICATIONS (DAMPER DIODE BUILT IN HIGH Collector-Base Voltage V c so = 1500V ABSOLUTE MAXIMUM RATINGS (TB= 2 5 0C) Characteristic I NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR
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0QQ7t41
KSD5002
GQG77fe
samsung 217
samsung tv
NPN Transistor 1A 800V to - 92
ksd5002
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200V transistor npn 2a
Abstract: samsung tv Samsung Semiconductor Q007t d 331 TRANSISTOR equivalent
Text: SAMSUNG SEMICONDUCTOR IME INC O 0007bM7 fl I NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5004 T-33 -13 COLOR TV HORIZONTAL OUTPUT APPLICATIONS HIGH Collector* ««* Voltage V eto « 1500V ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C ) Characteristic CoHector-Base Voltage
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0007bM7
KSD5004
SaturatO-92
GQG77fe
200V transistor npn 2a
samsung tv
Samsung Semiconductor
Q007t
d 331 TRANSISTOR equivalent
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JE2955T
Abstract: JE2955
Text: SAMSUNG SEMICONDUCTOR IME O I INC MJE2955T 7*11,4142 G0077Gfl 5 | PNP SILICON TRANSISTOR T- GENERAL PURPOSE A n 6 SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES 2 • High Current Galn-Bandwldth Product fT = 2MHz (MIN ABSOLUTE MAXIMUM RATINGS (Ta= 25°C )
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MJE2955T
G0077Gfl
GQG77fe
JE2955T
JE2955
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MJE350 equivalent
Abstract: No abstract text available
Text: SAMSUNG S E M IC O N D U C T O R MJE350 INC IM E D J 7 ^ 4 :1 ,4 2 00077Q5 1 PNP EPITAXIAL SILICON TRANSISTOR T HIGH COLLECTOR-EMITtER SUSTAINING VOLTAGE HIGH VOLTAGE GENERAL PURPOSE APPLICATIONS SUITABLE FOR TRANSFORMER " 1 3 ~ i< f TO-128 Complementary to MJE340
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MJE350
00077Q5
O-128
MJE340
GQG77fe
MJE350 equivalent
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samsung tv
Abstract: 4142
Text: SAMSUNG INC S EM I C ON D U C T O R KSC1520A IME 0007542 NPN EPITAXIAL SILICON TRANSISTOR " r-3 2 > - c n ~ COLOR TV CHROMA OUTPUT TO-202 • High Collector-Emitter \foltaga Veto =300V • Current Gain-Bandwldth Product fT=80MHz Typ ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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KSC1520A
O-202
80MHz
GQG77fe
samsung tv
4142
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equivalent of SL 100 NPN Transistor
Abstract: Transistor transistor a 92 a 331 transistor 711 "SAMSUNG SEMICONDUCTOR"
Text: SAMSUNG SEMICONDUCTOR 14E INC D » 711, 4142 OOOTbSO fl NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5005 COLOR TV HORIZONTAL' OUTPUT APPLICATIONS TO-3P HIQH Collector-Base Voltage Vc*o=1500V ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage
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KSD5005
GQG77fe
equivalent of SL 100 NPN Transistor
Transistor
transistor a 92 a 331
transistor 711
"SAMSUNG SEMICONDUCTOR"
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JE180
Abstract: JE182
Text: SAMS UNG SEMICONDUCTOR INC MJE180/181/182 14E 0 § V'ItMlME ÜOO?t.cm NPN EPITAXIAL SILICO N TRANSISTOR D E SIG N E D FOR LOW PO W ER A U D IO . AM PLIFIER A N D LOW CU RREN T HIGH SP E E D SW ITCH IN G APPLICATIO N S A BSO LU TE M A X IM U M RA TING S Ta=25°C
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MJE180/181/182
JE182
JE180
GQG77fe
JE180
JE182
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transistor 711
Abstract: DO 127 samsung tv
Text: IME D I 7 ^ 4 1 4 2 Q007b?7 b | NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5016 SAM SUN G SEM ICOND UC TO R INC T-33-11 V COLOR TV HORIZONTAL OUTPUT APPLICATIONS TO-3P F High Collector-Bass Vottags Vcso=1500V ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Characteristic
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Q007b
KSD5016
T-33-11
GQG77fe
transistor 711
DO 127
samsung tv
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D F 331 TRANSISTOR
Abstract: lt 332 diode samsung tv NPN Transistor 1A 800V to - 92 C 3311 transistor transistor t 04 27
Text: SAMSUNG SEMICONDUCTOR 14E 0 INC 17^4142 I OOQ?bkS T NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5012 T-33-11 COLOR TV HORIZONTAL OUTPUT APPLICATIONS DAMPER DIODE BUILT IN TO-3P(F) High Collector-Base Voltage VCb o = 1 5 0 0 V ABSOLUTE MAXIMUM RATINGS (Ta= 25°C )
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KSD5012
T-33-11
GQG77fe
D F 331 TRANSISTOR
lt 332 diode
samsung tv
NPN Transistor 1A 800V to - 92
C 3311 transistor
transistor t 04 27
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sot 23 transistor 70.2
Abstract: LTA 702 N k/702 P transistor
Text: S A MS U N G SEMICONDUCTOR INC 14ÉD 1 7 ei b 4 : m 2 0007704 S NpN EPITAXIAL M JE700/701/702/703 SILICON DARLINGTON TRANSISTOR T ~ ? :r - 3 HIGH DC CURRENT GAIN MIN hFE—750 @ lc s - 1 .5 and -2 .0 A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS
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JE700/701/702/703
MJE800/801/802/803
MJE700/701
MJE702/703
GQG77fe
sot 23 transistor 70.2
LTA 702 N
k/702 P transistor
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JE210
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC M JE210 1 4£ D | 7^4142 Q 0 D 7 tclfl 3 | PNP EPITAXIAL SILICON TRANSISTOR COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fT= 65MHz @ lc = -1 0 0 m A T 0-126
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JE210
65MHz
MJE200
GQG77fe
JE210
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20A SOT-23
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR 14E INC KSC1096 O 0007S31 Q I NPN EPITAXIAL SILICON TRANSISTOR 7 LOW FREQUENCY POWER AMPLIFIER • Complement to KSA634 • Collector Current lc=2.0A • Collector Dissipation Pc =10W Ta=25°C ABSOLUTE MAXIMUM RATINGS (T.=25°C) Characteristic
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0007S31
KSC1096
KSA634
GQG77fe,
20A SOT-23
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