GRG 250 Search Results

grg 250

Abstract: 2SK2218 ITR02610 ITR02611 ITR02612 ITR02613 ITR02614 ITR02615 ITR02616 ITR02617
Contextual Info: 注文コード No. N 5 2 0 2 2SK2218 No. N5202 70999 2SK2218 特長 N チャネル接合形シリコン電界効果トランジスタ 高周波低雑音増幅用 ・FBET プロセス採用。 ・アマチュア無線機用。 ・UHF 帯増幅 , 混合 , 発振用 , アナログスイッチ用。

2SK1961

Abstract: ITR02308 ITR02309 ITR02310 ITR02311 ITR02312 ITR02313 grg 250
Contextual Info: 注文コード No. N 4 5 0 2 2SK1961 No. 三洋半導体ニューズ 2SK1961 用途 N4502 70999 N チャネル接合形シリコン電界効果トランジスタ 高周波低雑音増幅用 ・高周波低雑音増幅用。 ・アマチュア無線機用。

diode sy 710

Abstract: 2SK1740 ITR01960 ITR01961 ITR01962 marking BFG N1593 EN4112
Contextual Info: 2SK1740 Ordering number : EN4112A SANYO Semiconductors DATA SHEET 2SK1740 N-Channel Junction Silicon FET HF Amplifiers Low-Frequency Amplifiers Analog Switches Features • • • • Adoption of FBET process. Large yfs. Small Ciss Small-sized package permitting 2SK1740-applied sets to be made small and slim.

2SK1740

Abstract: ITR01960 ITR01961 ITR01962 ITR01963 ITR01964 ITR01965 ITR01966 VDG-10V
Contextual Info: 2SK1740 注文コード No. N 4 1 1 2 A 三洋半導体データシート 半導体ニューズ No.N4112 をさしかえてください。 N チャネル接合型シリコン電界効果トランジスタ 2SK1740 高周波増幅用 , 低周波増幅用 , アナログ・スイッチ用

2SK2171

Abstract: ITR02575 ITR02576 ITR02577 ITR02578 ITR02579 ITR02580 MS-208 556ID N4871
Contextual Info: 注文コード No. N 4 8 7 1 2SK2171 No. N4871 72199 2SK2171 特長 N チャネル接合形シリコン電界効果トランジスタ 高・低周波増幅 , アナログ・スイッチ用 ・FBET プロセス採用。 ・yfs が大きい。 ・Ciss が小さい。

ANA 618

Abstract: HT17-068 HT-234 HT23-401 epx2 ST10 HT17-075 bzz 19 5v 1.8 deg stepper motor HT17-071
Contextual Info: STEP MOTOR ENCODERS Stepper Drives Optional step motor encoders To maximize the advantages of the ST series drives fitted with the Encoder Feedback Option Board, Applied Motion Products offers step motors fitted with an optical encoder. Users can also provide thier own encoder.

3S035T-1

Abstract: tungsram 3S035T-1 12QR205 5Q105 4S040T-1 grg 250 5S045T SRS 4451 tungsram RS 329g
Contextual Info: TUNGSRAM 1> r SENDEROHREN SENDETRIODEN SENDETETRODEN SENDEPENTODEN •• GLEICHRICHTERRÖHREN HOCHSPANNUNGS­ GLEICHRICHTERRÖHREN THYRATRONS SENDITRONS ' • . -• MIKROWEILENRÖHREN REFLEXKLYSTRONS WANDERFELDRÖHREN T Y P E N V E R Z E IC H N IS TYP SEITE

mpf102

Abstract: MPF102 JFET
Contextual Info: ON Semiconductort JFET VHF Amplifier MPF102 N–Channel – Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Drain–Gate Voltage VDG 25 Vdc Gate–Source Voltage VGS –25 Vdc Gate Current IG 10 mAdc Total Device Dissipation @ TA = 25°C

MPF102

Abstract: MPF102 JFET
Contextual Info: ON Semiconductort JFET VHF Amplifier MPF102 N−Channel − Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain −Source Voltage VDS 25 Vdc Drain −Gate Voltage VDG 25 Vdc Gate −Source Voltage VGS −25 Vdc Gate Current IG 10 mAdc Total Device Dissipation @ TA = 25°C

2N4856A-58A

Abstract: 2N4858A 2N4856A 2N4857A
Contextual Info: 2N4856A/4857A/4858A Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) IDSS Min (mA) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) 2N4856A –4 to –10 –40 50 25 5 4 2N4857A –2 to –6 –40 20 40 5 4 2N4858A –0.8 to –4

BF245

Abstract: bf245b JFET BF245 BF245A BF245C BF245C JFET
Contextual Info: ON Semiconductort BF245A BF245B JFET VHF/UHF Amplifiers N–Channel — Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS ±30 Vdc Drain–Gate Voltage VDG 30 Vdc Gate–Source Voltage VGS 30 Vdc Drain Current ID 100 mAdc Forward Gate Current

to236

Abstract: 37652 Siliconix N-Channel JFETs J/SST113 J113 equivalent marking j112 SST111 C1 AN105 J111 J112
Contextual Info: J/SST111 Series N-Channel JFETs J111 SST111 J112 SST112 J113 SST113 Product Summary Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST111 –3 to –10 30 5 4 J/SST112 –1 to –5 50 5 4 J/SST113 v–3 100 5 4 J/SST111, For applications information see AN105, page 1.

J111

Abstract: J112 J113 SST111 SST112 SST113 j113 equivalent 4858a
Contextual Info: J/SST111 Series Vishay Siliconix N-Channel JFETs J111 SST111 J112 SST112 J113 SST113 PRODUCT SUMMARY Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST111 –3 to –10 30 5 4 J/SST112 –1 to –5 50 5 4 J/SST113 v–3 100 5 4 FEATURES

BF245B

Contextual Info: BF245A, BF245B JFET VHF/UHF Amplifiers N−Channel − Depletion MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Drain −Source Voltage VDS ±30 Vdc Drain −Gate Voltage VDG 30 Vdc Gate −Source Voltage VGS 30 Vdc ID 100 mAdc IG f 10 mAdc 350

2N4858A

Abstract: 2N4856A 4857A 2N4857A Siliconix JFET Duals
Contextual Info: 2N4856A/4857A/4858A N-Channel JFETs Product Summary Part Number VGS off (V) V(BR)GSS Min (V) IDSS Min (mA) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) 2N4856A –4 to –10 –40 50 25 5 4 2N4857A –2 to –6 –40 20 40 5 4 2N4858A –0.8 to –4 –40

s11s

Abstract: marking GFG
Contextual Info: ON Semiconductort JFET VHF/UHF Amplifier Transistor MMBF4416LT1 N–Channel ON Semiconductor Preferred Device MAXIMUM RATINGS 3 Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc Drain–Gate Voltage VDG 30 Vdc Gate–Source Voltage VGS 30 Vdc IG 10

Contextual Info: ON Semiconductort 1 DRAIN JFET VHF/UHF Amplifiers N–Channel — Depletion 2N5486 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain–Gate Voltage VDG 25 Vdc Reverse Gate–Source Voltage VGSR 25 Vdc ID 30 mAdc Forward Gate Current IG f 10 mAdc

s11s

Contextual Info: ON Semiconductort JFET Transistor MMBF5484LT1 N–Channel ON Semiconductor Preferred Device MAXIMUM RATINGS 3 Rating Symbol Value Unit VDG 25 Vdc VGS r 25 Vdc Forward Gate Current IG(f) 10 mAdc Continuous Device Dissipation at or Below TC = 25°C Linear Derating Factor

2N3819

Abstract: N CHANNEL JFET 2N3819 2N3819 data 2n 3819
Contextual Info: 2N3819 JFET VHF/UHF Amplifier N−Channel − Depletion MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Drain −Source Voltage VDS 25 Vdc Drain −Gate Voltage VDG 25 Vdc Gate −Source Voltage VGS 25 Vdc ID 100 mAdc IG f 10 mAdc 350 2.8 mW mW/°C

2N5486

Contextual Info: ON Semiconductort 1 DRAIN JFET VHF/UHF Amplifiers N−Channel — Depletion 2N5486 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Drain −Gate Voltage Reverse Gate −Source Voltage Drain Current Forward Gate Current Total Device Dissipation @ TC = 25°C Derate above 25°C

U430

Abstract: TO78 package Siliconix JFET Pairs U431 70249 TO-78 package
Contextual Info: U430/431 Vishay Siliconix Matched N-Channel Pairs PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 – VGS2j Typ (mV) U430 –1 to –4 –25 10 –15 25 U431 –2 to –6 –25 10 –15 25 FEATURES BENEFITS APPLICATIONS

2N4858A

Abstract: 2N4856A 2N4857A Siliconix JFET Duals 4858A
Contextual Info: 2N4856A/4857A/4858A Siliconix NĆChannel JFETs Product Summary Part Number VGS off (V) V(BR)GSS Min (V) IDSS Min (mA) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) 2N4856A -4 to -10 -40 50 25 5 4 2N4857A -2 to -6 -40 20 40 5 4 2N4858A -0.8 to -4 -40 8 60

2N4858A

Abstract: 2N4856A 2N4857A Siliconix JFET Duals 4857A
Contextual Info: 2N4856A/4857A/4858A N-Channel JFETs Product Summary Part Number VGS off (V) V(BR)GSS Min (V) IDSS Min (mA) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) 2N4856A –4 to –10 –40 50 25 5 4 2N4857A –2 to –6 –40 20 40 5 4 2N4858A –0.8 to –4 –40

J113 equivalent

Abstract: J113 AN105 J111 J112 SST111 SST112 SST113 V31005
Contextual Info: J/SST111 Series Siliconix NĆChannel JFETs J111 J112 J113 Product Summary SST111 SST112 SST113 Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST111 -3 to -10 30 5 4 J/SST112 -1 to -5 50 5 4 J/SST113 v-3 100 5 4 J/SST111, For applications information see AN105, page 22.