GRM155B11H102K Search Results

Contextual Info: Capacitors > Monolithic Ceramic Capacitors Data Sheet Monolithic Ceramic Capacitors GRM155B11H102KA01p 0402, B, 1000pF, 50Vdc p: packaging code RoHS regulation conformity parts g e T e L W (in mm) • Dimensions ■ Packaging Length L 1.0mm±0.05mm Code

Contextual Info: Capacitors > Monolithic Ceramic Capacitors > Soldering Electrode GRM15/18/21/31 Data Sheet Monolithic Ceramic Capacitors GRM155B11H102KA01p 0402, B, 1000pF, 50Vdc p: packaging code g e T e L W (in mm) • Dimensions ■ Packaging Length L 1.00mm±0.05mm

GRM155B11

Contextual Info: Capacitors > Monolithic Ceramic Capacitors Data Sheet Monolithic Ceramic Capacitors GRM155B11H102KA01p 0402, B, 1000pF, 50Vdc p: packaging code RoHS regulation conformity parts g e T e L W (in mm) • Dimensions ■ Packaging Length L 1.0mm±0.05mm Code

GRM1552C1H

Abstract: GRM155B11H102KA01B RO4003 GRM155B11 GRM155B11H grm1552c 12-PIN UPG2035T5F UPG2035T5F-E2-A 142-0721
Contextual Info: DATA SHEET NEC's BROADBAND GaAs MMIC DPDT SWITCH UPG2035T5F FOR 2.4 GHz AND 5 GHz WLAN FEATURES • DESCRIPTION NEC's UPG2035T5F is a GaAs MMIC DPDT switch for 2.4 GHz and 5 GHz dualband Wireless LAN. OPERATING FREQUENCY: 2.4 to 2.5 GHz and 4.9 to 6.0 GHz specified

Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3033M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz

39E2527A

Abstract: GRM155B11E103K GRM155B11H102K spectrum emission mask MITSUBISHI Microwave PW2100 GRM32EB31C476K grm188B31E105K metal detector plans wimax spectrum mask
Contextual Info: MITSUBISHI SEMICONDUCTOR MGFS39E2527A-01 2.5-2.7GHz HBT Integrated Circuit Specifications are subject to change without notice. Outline Drawing DESCRIPTION 6.0 6.0 30 29 28 27 26 25 24 23 22 21 39E2527A Lot. No JAPAN 11 12 13 14 15 16 17 18 19 20 InGaP HBT Device

HBT 01 05

Contextual Info: Mitsubishi Semiconductors MGFS38E3336-01 3.3 - 3.6GHz HBT MMIC MODULE Specifications are subject to change without notice. Outline Drawing DESCRIPTION MGFS38E3336 is a GaAs RF amplifier designed for WiMAX CPE. DIM in mm 1.0 4.0 • • • • • • •

GRM31CB30J476K

Abstract: MGFS38E2325 RPC03T
Contextual Info: Mitsubishi Semiconductors MGFS38E2325-01 2.3 - 2.5GHz HBT MMIC MODULE Specifications are subject to change without notice. Outline Drawing DESCRIPTION MGFS38E2325 is a GaAs RF amplifier designed for WiMAX CPE. DIM in mm 1.0 4.0 • • • • • • •

Contextual Info: Mitsubishi Semiconductors MGFS38E3336-01 3.3 - 3.6GHz HBT MMIC MODULE Specifications are subject to change without notice. Outline Drawing DESCRIPTION MGFS38E3336 is a GaAs RF amplifier designed for WiMAX CPE. DIM in mm 1.0 4.0 • • • • • • •

NESG3033M14-T3

Abstract: MCR01MZPJ5R1 NESG3033M14 AML1005H5N6STS NESG3032M14 NESG3033M14-A NESG3033M14-T3-A GRM1552C1H GRM155B11H GRM1552C1H270J
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

nanoPAN

Abstract: nanoPAN 5360 WE-BPF1008 ism bandpass filter Nanotron Technologies nanotron GRM1552C1H PAN5360 wuerth 748351124
Contextual Info: nanoPAN 5360 RF Module Technical Description Version 1.00 NA-05-0119-0339-1.00 Document Information nanoPAN 5360 RF Module Technical Description Document Information Document Title: nanoPAN 5360 RF Module Technical Description Document Version: 1.00 Released yyyy-mm-dd :

GRM155B11H102KA01

Abstract: NESG3033M14 AML1005H5N6STS NESG3032M14 NESG3033M14-A NESG3033M14-T3 NESG3033M14-T3-A FDK 1575 AML1005H3N9STS
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

GRM0222C1C330GD05

Contextual Info: !Note • Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this catalog to prevent smoking and/or burning, etc. • This catalog has only typical specifications. Therefore, please approve our product specifications or transact the approval sheet for product specifications before ordering.

39E2527A

Contextual Info: MITSUBISHI SEMICONDUCTOR MGFS39E2527A-01 2.5-2.7GHz HBT Integrated Circuit Specifications are subject to change without notice. Outline Drawing DESCRIPTION 6.0 6.0 30 29 28 27 26 25 24 23 22 21 39E2527A Lot. No JAPAN 11 12 13 14 15 16 17 18 19 20 InGaP HBT Device

GRM188F11E104Z

Abstract: GRM155B11E103K GRM188F11E104ZA01 GRM188F11H GRM219F11E105ZA01 GRM188B11H103 GRM188F11E104 GRM188B11H103KA01 GRM155F11H103ZA01 GRM155F11C
Contextual Info: Capacitors Monolithic Ceramic Capacitors GR_B1/F1/R3 B/F/R High Dielectric Constant Type 10/16/25/50V g e T e L Part Number GRM155 GRM188* GRM216 GRM219 GRM21B GRM319 GRM31M GRM31C W Dimensions (mm) L W T e 1.0 ±0.05 0.5 ±0.05 0.5 ±0.05 0.15 to 0.3 1.6 ±0.1 0.8 ±0.1 0.8 ±0.1 0.2 to 0.5

nanoPAN

Abstract: GRM1552C1H RF MODULE Nanotron Technologies nanoPAN 5360 nanotron BAL0805 antenna murata GRM155B11 NA1TR8
Contextual Info: nanoPAN 5361 RF Module Technical Description Version 1.00 NA-05-0119-0340-1.00 Document Information nanoPAN 5361 RF Module Technical Description Document Information Document Title: nanoPAN 5361 RF Module Technical Description Document Version: 1.00 Released yyyy-mm-dd :

GRM155B11C223K

Abstract: RPC03T GRM155B11 GRM32EB31C476K
Contextual Info: Mitsubishi Semiconductors Preliminary MGFS38E2527-01 2.5 - 2.7GHz HBT MMIC MODULE Specifications are subject to change without notice. Outline Drawing DESCRIPTION MGFS38E2527 is a GaAs RF amplifier designed for WiMAX CPE. DIM in mm 1.0 4.0 • • • •

Contextual Info: Mitsubishi Semiconductors MGFS38E2325-01 2.3 - 2.5GHz HBT MMIC MODULE Specifications are subject to change without notice. Outline Drawing DESCRIPTION MGFS38E2325 is a GaAs RF amplifier designed for WiMAX CPE. DIM in mm 1.0 4.0 • • • • • • •

GRM21bc81c106

Abstract: GRM155B11 grm155b31a474ke GRM32EB30J107 GRM31CB31 grm1882c1h100 GRM31BR7 GJM0334 GRM188R11H104 GRM033R61A104KE
Contextual Info: !Note • Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this catalog to prevent smoking and/or burning, etc. • This catalog has only typical specifications. Therefore, please approve our product specifications or transact the approval sheet for product specifications before ordering.

Contextual Info: Mitsubishi Semiconductors Preliminary MGFS38E2527-01 2.5 - 2.7GHz HBT MMIC MODULE Specifications are subject to change without notice. Outline Drawing DESCRIPTION MGFS38E2527 is a GaAs RF amplifier designed for WiMAX CPE. DIM in mm 1.0 4.0 • • • •

Contextual Info: MITSUBISHI SEMICONDUCTOR MGFS39E3336-01 3.3-3.6GHz HBT Integrated Circuit Specifications are subject to change without notice. Outline Drawing DESCRIPTION 6.0 Lot. No JAPAN 30 29 28 27 26 25 24 23 22 21 11 12 13 14 15 16 17 18 19 20 6.0 39E3336 30 29 28

X7T voltage dependence

Abstract: GRM155B31A225K GR331 GRM155R71E104K GRM188R61E475 GRM188R71C105KA12 GRM1555C1HR10BA01 GRM32ER71H106KA12 GRM0222C1A101GD05 GRM188D71
Contextual Info: !Note • Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this catalog to prevent smoking and/or burning, etc. • This catalog has only typical specifications. Therefore, please approve our product specifications or transact the approval sheet for product specifications before ordering.

39E3336

Abstract: MGFS39E3336 SWT-9 GRM188B31E105KA75 spectrum emission mask wimax MGFS39E3336-01 GRM155B11H1 160kO GRM188B31E
Contextual Info: MITSUBISHI SEMICONDUCTOR MGFS39E3336-01 3.3-3.6GHz HBT Integrated Circuit Specifications are subject to change without notice. Outline Drawing DESCRIPTION 6.0 Lot. No JAPAN 30 29 28 27 26 25 24 23 22 21 11 12 13 14 15 16 17 18 19 20 6.0 39E3336 30 29 28

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid