GRM1882C1H101JA01 Search Results

Contextual Info: Capacitors > Monolithic Ceramic Capacitors > Soldering Electrode GRM15/18/21/31 Data Sheet Monolithic Ceramic Capacitors GRM1882C1H101JA01p 0603, CH, 100pF, 50Vdc p: packaging code g e T e L W (in mm) • Dimensions ■ Packaging Length L 1.60mm±0.10mm

Contextual Info: Capacitors > Monolithic Ceramic Capacitors Data Sheet Monolithic Ceramic Capacitors GRM1882C1H101JA01p 0603, CH, 100pF, 50Vdc p: packaging code RoHS regulation conformity parts g e T e L W (in mm) • Dimensions ■ Packaging Length L 1.6mm±0.1mm Code Packaging

Contextual Info: Capacitors > Monolithic Ceramic Capacitors Data Sheet Monolithic Ceramic Capacitors GRM1882C1H101JA01p 0603, CH, 100pF, 50Vdc p: packaging code RoHS regulation conformity parts g e T e L W (in mm) • Dimensions ■ Packaging Length L 1.6mm±0.1mm Code Packaging

85500 transistor

Abstract: MZB1001T02 MICROblower piezoelectric blower MICRO blower RK73Z1JTTD GRM1882C1H101JA01D GRM1882C1H corrugated carton diagram PRESSURE cooker
Contextual Info: 仕様書番号 ：MZB1001T02_Ver.2.0 Drawing No. P. 1/18 仕 様 書 Specification of Piezoelectric Microblower MZB1001T02 承 認 Approved by 決定年月日 Date 確 認 Checked by 担 当 Issued by October 11, 2011 1. 適用 Scope 当納入仕様書は一般電子機器製品に使用する圧電マイクロブロア 以下、ブロア について規定します。

RD07MUS2B

Abstract: Single-Stage amplifier GRM2162C1H151JD01E 817MHz RD07M
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-039-A Date : 10th Oct. ‘08 Rev.date : 30th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed SUBJECT: :T.Okawa RD07MUS2B single-stage amplifier RF performance at f=763-870MHz,Vdd=7.2V

atc100a2r4b

Contextual Info: Data Sheet NE5550979A R09DS0031EJ0100 Rev.1.00 Nov 25, 2011 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)

GRM42-6CH

Abstract: GRM39F104Z25 GRM1885C1H100JA01B GRM39F104Z GRM188R60J105KA01B grm219b31a GRM39CH GRM40F104Z50 GRM40X7R104K50 GRM188F11C105Z
Contextual Info: Part Number Search:Result head Home head North America Europe head MURATA Search Engine >Part Number Search >Result 695 Items Found Seq No Previous Part Number Global Part Number Primary Secondary 1 GHM1030R101K1K GRM31AR33A101KY01D Capacitors Monolithic Ceramic Medium-voltage

Contextual Info: Data Sheet NE5550979A R09DS0031EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)

Contextual Info: < Silicon RF Power MOS FET Discrete > RD02LUS2 RoHS Compliance, Silicon MOSFET Power Transistor 470MHz,2W OUTLINE DRAWING DESCRIPTION RD02LUS2 is a MOS FET type transistor specifically 4.4 +/-0.1 designed for VHF/UHF RF amplifiers applications. T YPE N AM E

LV8736

Abstract: LV8734 2A 473J LV8732 LV8735
Contextual Info: SANYO Semiconductors APPLICATION NOTE LV8731V LV8732V LV8734V LV8735V LV8736V Bi-CMOS LSI PWM Constant-Current Control Stepping Motor Driver Overview The LV873x series is a 2-channel H-bridge driver IC that can switch a stepping motor driver, which is capable of

GRM0222C1C330GD05

Contextual Info: !Note • Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this catalog to prevent smoking and/or burning, etc. • This catalog has only typical specifications. Therefore, please approve our product specifications or transact the approval sheet for product specifications before ordering.

S1S60000

Abstract: MCR03*J102 resistor motolora
Contextual Info: Intelligent Network Controller for Embedded System S1S60000 Technical Manual S1S60000 Technical Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of SEIKO EPSON. SEIKO EPSON reserves the right to make changes to this material without

ATC100A101JT

Abstract: Waka 01K0790-20 NE5550979A ATC100A3R3BW GRM1882C1H101JA01 GRM31CR72A105KA01B R-4775
Contextual Info: A Business Partner of Renesas Electronics Corporation. NE5550979A Data Sheet R09DS0031EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm

GRP1552C1H680

Abstract: GRP1552 GRP1552C1H120JZ01 GRP1552C1H101JD01 GRM1882C1H150JA01 GRP15X4C1H2R0 GRM2192C2A331JZ01 GRM1882C1H8R0DZ01 GRM1882C1H182JA01
Contextual Info: Capacitors Monolithic Ceramic Capacitors Temperature Compensating JIS Temperature Compensating Type 25/50V g e T e L Part Number GRP155 GRM155 GRM188* GRM216 GRM219 GRM21B GRM319 GRM31M GRM31C L W Dimensions mm W T e g min. 1.0 ±0.05 0.5 ±0.05 0.5 ±0.05 0.15 to 0.3

R1766

Contextual Info: Data Sheet NE5550979A R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)

XC61FN2712MR

Abstract: philips HD6 series MC-306, 32.768kHz
Contextual Info: MF1497-02 Intelligent Network Controller for Embedded System S1S60000 Technical Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.

S1S60000F00A500

Abstract: 10EFh GRM188B11H104KA01D epson MARKING CODE MC 1FW 46
Contextual Info: Intelligent Network Controller S1S60000 Technical Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.

GRM1882C1H5R0CZ01D

Abstract: GRM1882C1H101JA01D GRM188R11H102KA01D capasitor 6.5v .14 f RPC05-101J GRM1882C1H5R0C grm188r11h RD02MUS1B GRM1882C1H150JA01D RPC05-0R0
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-111 Date : 18th Aug. 2010 Prepared : K.Osaki, Y.Tanaka Confirmed : S.Kametani Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD00HVS1 & RD02MUS1B 2-stage amplifier RF performance at f=400-470MHz, Vdd=7.2/6.5V

GRM1882C1H330JA01D

Abstract: GRM1882C1H101JA01D GRM1882C1H470JA01D RD02MUS1B GRM1882C1H120DZ01D GRM1882C1H301JA01D rd02mus1
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-108-A Date : 3th Jun. 2010 Rev. Date :22th Jun. 2010 Prepared : H.Ukita, K.Osaki Y.Tanaka Confirmed : S.Kametani Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD02MUS1B single-stage amplifier RF performance at f=400 to 470MHz, Vdd=7.2V.

MCR03EZHJ

Abstract: GRM188B11H104KA01D GRM188B11H103KA01D philips HD6 series Clause-22 93C46 Hitachi GRM188B11H103KA01 MCR03*J102 resistor S1S60000 00A1
Contextual Info: MF1497-01 Intelligent Network Controller for Embedded System S1S60000 Technical Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.

philips HD6 series

Abstract: TOREX MARKING RULE
Contextual Info: Intelligent Network Controller S1S60000 Technical Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.

SIS60000

Abstract: philips HD6 series epson Service Manual GRM188B11H103K
Contextual Info: MF1497-03 Intelligent Network Controller for Embedded System S1S60000 Technical Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.

GRM21bc81c106

Abstract: GRM155B11 grm155b31a474ke GRM32EB30J107 GRM31CB31 grm1882c1h100 GRM31BR7 GJM0334 GRM188R11H104 GRM033R61A104KE
Contextual Info: !Note • Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this catalog to prevent smoking and/or burning, etc. • This catalog has only typical specifications. Therefore, please approve our product specifications or transact the approval sheet for product specifications before ordering.

gp 542

Abstract: GRM1882C1H4R0CZ Single-Stage amplifier GRM1882C1H GRM1882C1H8R0DZ01 GRM1882C1H101JA01 1/Diode gp 542 RD05MMP1 GRM1884C1H1R0CZ01 GRM1882C1H151JA01
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-030-A Date : 25th Sep. ‘07 Rev.date : 30th Jun. 2010 Prepared : H. Sakairi S. Kametani Confirmed SUBJECT: : T.Okawa RD05MMP1 Single-Stage amplifier RF performance at f=800-900MHz,Vdd=7.2V