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California Eastern Laboratories (CEL) NE5550979A-A RF MOSFET LDMOS 7.5V 79A
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DigiKey	NE5550979A-A	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
California Eastern Laboratories (CEL) NE5550979A-T1-A RF MOSFET LDMOS 7.5V 79A
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DigiKey	NE5550979A-T1-A	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
California Eastern Laboratories (CEL) NE5550979A-EV04-A EVAL BOARD NE5550979A
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DigiKey	NE5550979A-EV04-A	Box				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	NE5550979A-EV04-A					1 $143.41 10 $134.31 100 $127.25 1000 $127.25 10000 $127.25	Get Quote
Renesas Electronics Corporation NE5550979A-T1A-A Trans RF MOSFET 30V 3A 4-Pin Case 79A T/R
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Verical	NE5550979A-T1A-A		1,000		85	1 - 10 - 100 $4.225 1000 $3.7875 10000 $3.5625	Buy Now
Rochester Electronics	NE5550979A-T1A-A		1,000		1	1 - 10 - 100 $3.38 1000 $3.03 10000 $2.85	Buy Now
Renesas Electronics Corporation NE5550979A-T1-A Transistors
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Vyrian	NE5550979A-T1-A		472			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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NE5550979A Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
NE5550979A-A		Renesas Technology	RF FETs, Discrete Semiconductor Products, IC FET LDMOS 30V 3.0A 79A-PKG		Original	PDF		12
NE5550979A-EV04-A		California Eastern Laboratories	RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NE5550979A		Original	PDF		5
NE5550979A-EV09-A		California Eastern Laboratories	RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NE5550979A		Original	PDF		4
NE5550979A-T1-A		Renesas Technology	RF FETs, Discrete Semiconductor Products, IC FET LDMOS 30V 3.0A 79A-PKG		Original	PDF		12

NE5550979A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Evaluation Board Document NE5550979A o Circuit Description o Typical Performance Data o Circuit Schematic and Assembly Drawing Circuit Description The NE5550979A-EV04-A is an evaluation circuit board for Renesas’ LDMOS power FET, NE5550979A optimized for the performance at 460MHz. The circuit board is RoHS compliant.	Original	NE5550979A NE5550979A-EV04-A NE5550979A 460MHz. 200mA 28mil 460MHz 200mA	PDF
atc100a2r4b Contextual Info: Data Sheet NE5550979A R09DS0031EJ0100 Rev.1.00 Nov 25, 2011 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)	Original	NE5550979A R09DS0031EJ0100 IEC61000-4-2, NE5550979A NE5550979A-AZ atc100a2r4b	PDF
Contextual Info: Data Sheet NE5550979A R09DS0031EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)	Original	NE5550979A R09DS0031EJ0200 IEC61000-4-2, NE5550979A NE5550979A-A	PDF
Contextual Info: Evaluation Board Document NE5550979A o Circuit Description o Typical Performance Data o Circuit Schematic and Assembly Drawing Circuit Description The NE5550979A-EV09-A is an evaluation circuit board for Renesas’ power LDMOS FET, NE5550979A optimized for the performance at 915MHz. The circuit board is RoHS compliant.	Original	NE5550979A NE5550979A-EV09-A NE5550979A 915MHz. 200mA 28mil 915MHz 200mA	PDF
ATC100A101JT Abstract: Waka 01K0790-20 NE5550979A ATC100A3R3BW GRM1882C1H101JA01 GRM31CR72A105KA01B R-4775 Contextual Info: A Business Partner of Renesas Electronics Corporation. NE5550979A Data Sheet R09DS0031EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm	Original	NE5550979A R09DS0031EJ0200 IEC61000-4-2, HS350 NE5550979A ATC100A101JT Waka 01K0790-20 ATC100A3R3BW GRM1882C1H101JA01 GRM31CR72A105KA01B R-4775	PDF
R1766 Contextual Info: Data Sheet NE5550979A R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)	Original	NE5550979A R09DS0031EJ0300 IEC61000-4-2, NE5550979A NE5550979A-A R1766	PDF
Panasonic R1766 Contextual Info: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550979A R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm	Original	NE5550979A R09DS0031EJ0300 IEC61000-4-2, Panasonic R1766	PDF
SMD M05 sot23 Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404 Contextual Info: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly	Original	2013/4M SMD M05 sot23 NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404	PDF