GRM188B11H102KA01 Search Results

Contextual Info: Capacitors > Monolithic Ceramic Capacitors Data Sheet Monolithic Ceramic Capacitors GRM188B11H102KA01p 0603, B, 1000pF, 50Vdc p: packaging code RoHS regulation conformity parts g e T e L W (in mm) • Dimensions ■ Packaging Length L 1.6mm±0.1mm Code Packaging

GRM188B11H

Contextual Info: Capacitors > Monolithic Ceramic Capacitors Data Sheet Monolithic Ceramic Capacitors GRM188B11H102KA01p 0603, B, 1000pF, 50Vdc p: packaging code RoHS regulation conformity parts g e T e L W (in mm) • Dimensions ■ Packaging Length L 1.6mm±0.1mm Code Packaging

Contextual Info: Capacitors > Monolithic Ceramic Capacitors Data Sheet Monolithic Ceramic Capacitors GRM188B11H102KA01p 0603, B, 1000pF, 50Vdc p: packaging code RoHS regulation conformity parts g e T e L W (in mm) • Dimensions ■ Packaging Length L 1.6mm±0.1mm Code Packaging

Contextual Info: Capacitors > Monolithic Ceramic Capacitors > Soldering Electrode GRM15/18/21/31 Data Sheet Monolithic Ceramic Capacitors GRM188B11H102KA01p 0603, B, 1000pF, 50Vdc p: packaging code g e T e L W (in mm) • Dimensions ■ Packaging Length L 1.60mm±0.10mm

Contextual Info: EGN21C105I2D High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater consistency

EGN26C070I2D

Contextual Info: EGN26C070I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 48.8dBm typ. @ Psat High Efficiency: 70%(typ.) @ Psat Power Gain : 18dB(typ.) @ f=2.6GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater

GRM42-6CH

Abstract: GRM39F104Z25 GRM1885C1H100JA01B GRM39F104Z GRM188R60J105KA01B grm219b31a GRM39CH GRM40F104Z50 GRM40X7R104K50 GRM188F11C105Z
Contextual Info: Part Number Search:Result head Home head North America Europe head MURATA Search Engine >Part Number Search >Result 695 Items Found Seq No Previous Part Number Global Part Number Primary Secondary 1 GHM1030R101K1K GRM31AR33A101KY01D Capacitors Monolithic Ceramic Medium-voltage

B4846

Abstract: S21 Package GRM188B11H102KA01D CS3376C
Contextual Info: EGN21C105I2D GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater

GRM2162C1H180JZ01D

Abstract: RD07MUS2B GRM2162C1H101JA01D GRM2162C1H120JZ01D Single-Stage amplifier GRM2162C1H270JZ01D GRM2162C1H300JZ01D GRM2162C1H560JZ01D murata 897 Mhz AN-UHF-105-A
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-105-A Date : 22th Dec. 2009 Rev. Date :22th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD07MUS2B TETRA single-stage amplifier at f=380-430MHz,Vdd=7.2V

GRM0222C1C330GD05

Contextual Info: !Note • Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this catalog to prevent smoking and/or burning, etc. • This catalog has only typical specifications. Therefore, please approve our product specifications or transact the approval sheet for product specifications before ordering.

6-10 Ghz RF Power 100w amplifier

Abstract: 2S110 GSC356-HYB2300 GRM55ER72A475K EGN26C070I2D GRM188B11H102KA01D 60Ghz GaN amplifier 100W GRM188B31H104KA92D JESD22-A114
Contextual Info: EGN26C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Power Gain : 18dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater

CS3376C

Abstract: GRM188B11H102KA01D ATC100B100JW500 risho GRM188B31H104KA92D EGN35C070I2D GSC364-HYB3500 JESD22-A114 MCR03EZPJ101 MCR18EZPJ101
Contextual Info: EGN35C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 60%(typ.) @ Psat ・Power Gain : 15.5dB(typ.) @ f=3.5GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater

BD5452A

Abstract: BD5452AMUV marking 2P diode 2PIN LCC3225T2R2MR VQFN032V5050
Contextual Info: BD5452AMUV Datasheet Middle Power Class-D Speaker Amplifier series 15W+15W Class D Speaker Amplifier for Digital Input BD5452AMUV ●Applications Flat Panel TVs LCD, Plasma , Home Audio, Desktop PC, Amusement equipments, Electronic Music equipments, etc.

GRM188B11H103

Abstract: GRM188F11A grm219b11 GRM188F11E104Z F1R3B GRP155R GRP155B11H GRM188F11A105 GRM188R11H471KA01 GRM188B11E104KA01
Contextual Info: Capacitors Monolithic Ceramic Capacitors GR_B1/F1/R3 B/F/R High Dielectric Constant Type 10/16/25/50V g e T e L Part Number GRP155 GRM155 GRM188* GRM216 GRM219 GRM21B GRM319 GRM31M GRM31C L W Dimensions (mm) W T e g min. 1.0 ±0.05 0.5 ±0.05 0.5 ±0.05 0.15 to 0.3

bd5444

Abstract: RUBYCON CAPACITOR 220M GRM188B11H102KA01 TOKO A7503AY BD5444EFV
Contextual Info: Middle Power Class-D Speaker Amplifiers Analog Input / Single End Output Class-D Speaker Amplifier BD5444EFV No.11075ECT15 ●Overview BD5444EFV is a Analog input type Class D Speaker Amplifier designed for Flat-panel TVs in particular for space-saving and low-power consumption, delivers an output power of 20W+20W. This IC employs state-of-the-art Bipolar, CMOS, and

toshiba lcd power board schematic

Abstract: led lcd inverter schematic alps touch screen S5U13U11P00C100 GRM155B31C104K s1d13u11 toshiba lcd inverter pinout GRM188F11C105ZA01 CCFL inverter pinout toshiba 20X2 LCD DISPLAY PINOUT toshiba
Contextual Info: S1D13U11 Display Controller S5U13U11 Evaluation Board User Manual SEIKO EPSON CORPORATION Rev. 1.1 Evaluation board/kit and Development tool important notice 1. This evaluation board/kit or development tool is designed for use for engineering evaluation, demonstration, or development purposes only. Do not use it for other purpose. It is not intended to meet the requirement of design for finished product.

3072 rohm

Contextual Info: Datasheet Middle Power Class-D Speaker Amplifier series 15W+15W Class D Speaker Amplifier for Digital Input BD5452AMUV ●Applications Flat Panel TVs LCD, Plasma , Home Audio, Desktop PC, Amusement equipments, Electronic Music equipments, etc. ●Package(s)

2S110

Abstract: GRM188B11H102KA01D
Contextual Info: EGN26C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Power Gain : 18dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater

EKZE101

Contextual Info: EGN21C210I2D GaN-HEMT 210W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 53.0dBm typ. @ Psat -High Efficiency: 68%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater

Contextual Info: Datasheet Middle Power Class-D Speaker Amplifier series 15W+15W Class D Speaker Amplifier for Digital Input BD5452AMUV ●Applications Flat Panel TVs LCD, Plasma , Home Audio, Desktop PC, Amusement equipments, Electronic Music equipments, etc. ●Package(s)

GRM188F11E104Z

Abstract: GRM155B11E103K GRM188F11E104ZA01 GRM188F11H GRM219F11E105ZA01 GRM188B11H103 GRM188F11E104 GRM188B11H103KA01 GRM155F11H103ZA01 GRM155F11C
Contextual Info: Capacitors Monolithic Ceramic Capacitors GR_B1/F1/R3 B/F/R High Dielectric Constant Type 10/16/25/50V g e T e L Part Number GRM155 GRM188* GRM216 GRM219 GRM21B GRM319 GRM31M GRM31C W Dimensions (mm) L W T e 1.0 ±0.05 0.5 ±0.05 0.5 ±0.05 0.15 to 0.3 1.6 ±0.1 0.8 ±0.1 0.8 ±0.1 0.2 to 0.5

EKZE101

Abstract: GaN amplifier 100W GRM55ER72A475K grm188b11h102ka01d 105w ATC100B Soshin JESD22-A114 MCR18 TZY2Z010A001
Contextual Info: EGN21C105I2D GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater

1A05A

Abstract: BD9140MUV
Contextual Info: TECHNICAL NOTE Single-chip built-in FET type Switching Regulator Series High Efficiency Step-down Switching Regulator BD9141MUV ●Description ROHM’s high efficiency step-down switching regulator BD9141MUV is a power supply designed to produce a low voltage

1A05A

Abstract: D9141 CM05B BD9140MUV d914 Equivalence transistor RLF7030T-4R7M3R4 VQFN020V4040 CM32X5R226M25A
Contextual Info: TECHNICAL NOTE Single-chip built-in FET type Switching Regulator Series High Efficiency Step-down Switching Regulator BD9141MUV ●Description ROHM’s high efficiency step-down switching regulator BD9141MUV is a power supply designed to produce a low voltage