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    GS 34 QG Datasheets Context Search

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    882N03MS

    Abstract: 882N03
    Text: BSC882N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% avalanche tested 34 V V GS=10 V 2.6 mΩ V GS=4.5 V 3.3 ID


    Original     		PDF BSC882N03MS IEC61249-2-21 882N03MS 882N03MS 882N03

    BSC883N03MS

    Abstract: 883N03MS
    Text: BSC883N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% Avalanche tested 34 V V GS=10 V 3.8 mΩ V GS=4.5 V 4.6 ID


    Original     		PDF BSC883N03MS IEC61249-2-21 883N03MS 883N03MS

    884N03MS

    Abstract: BSC884N03MS
    Text: BSC884N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% avalanche tested 34 V V GS=10 V 4.5 mΩ V GS=4.5 V 5.4 ID


    Original     		PDF BSC884N03MS IEC61249-2-21 884N03MS 884N03MS

    BSO203SP

    Abstract: IEC61249-2-21 JESD22-A114 203SP f89a
    Text: BSO203SP H OptiMOS P-Power-Transistor Product Summary Features V DS • single P-Channel in SO8 R DS on ,max • Qualified according JEDEC for target applications • 150°C operating temperature -20 V V GS=4.5 V 21 mΩ V GS=2.5 V 34 ID -8.9 A • Super Logic Level (2.5V rated)


    Original     		PDF BSO203SP IEC61249-2-21 203SP IEC61249-2-21 JESD22-A114 203SP f89a

    Untitled

    Abstract: No abstract text available
    Text: BSO203P H OptiMOS P-Power-Transistor Product Summary Features V DS • dual P-Channel in SO8 R DS on ,max • Qualified according JEDEC for target applications • 150°C operating temperature -20 V V GS=4.5 V 21 mΩ V GS=2.5 V 34 ID -8.2 A • Super Logic Level (2.5V rated)


    Original     		PDF BSO203P IEC61249-2-21

    Untitled

    Abstract: No abstract text available
    Text: BSO203SP H OptiMOS P-Power-Transistor Product Summary Features V DS • single P-Channel in SO8 R DS on ,max • Qualified according JEDEC for target applications • 150°C operating temperature -20 V V GS=4.5 V 21 mΩ V GS=2.5 V 34 ID -8.9 A • Super Logic Level (2.5V rated)


    Original     		PDF BSO203SP IEC61249-2-21 203SP

    203P

    Abstract: BSO203P IEC61249-2-21 JESD22-A114 d82 diode
    Text: BSO203P H OptiMOS P-Power-Transistor Product Summary Features V DS • dual P-Channel in SO8 R DS on ,max • Qualified according JEDEC for target applications • 150°C operating temperature -20 V V GS=4.5 V 21 mΩ V GS=2.5 V 34 ID -8.2 A • Super Logic Level (2.5V rated)


    Original     		PDF BSO203P IEC61249-2-21 203P IEC61249-2-21 JESD22-A114 d82 diode

    FDD3670

    Abstract: No abstract text available
    Text: FDD3670 100V N-Channel PowerTrenchÒ MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 34 A, 100 V. RDS ON = 32 mΩ @ V GS = 10 V


    Original     		PDF FDD3670 FDD3670

    34A-100

    Abstract: FDD3670
    Text: FDD3670 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 34 A, 100 V. RDS ON = 32 mΩ @ V GS = 10 V


    Original     		PDF FDD3670 34A-100 FDD3670

    Untitled

    Abstract: No abstract text available
    Text: FDD3670 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 34 A, 100 V. RDS ON = 32 mΩ @ V GS = 10 V


    Original     		PDF FDD3670

    CBVK741B019

    Abstract: F63TNR FDD3670 FDD6680
    Text: FDD3670 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 34 A, 100 V. RDS ON = 32 mΩ @ V GS = 10 V


    Original     		PDF FDD3670 CBVK741B019 F63TNR FDD3670 FDD6680

    Untitled

    Abstract: No abstract text available
    Text: FDD3670 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 34 A, 100 V. RDS ON = 32 mΩ @ V GS = 10 V


    Original     		PDF FDD3670

    BSN012N03LS

    Abstract: No abstract text available
    Text: BSN012N03LS OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance Buck converter • Very low parasitic inductance • Low profile <0.5 mm • Double side cooling VDS 30 V RDS(on),max 1.2 mW ID 50 A QOSS 34 nC QG(0V.10V) 61


    Original     		PDF BSN012N03LS IEC61249-2-21 012N03L BSN012N03LS

    Untitled

    Abstract: No abstract text available
    Text: BSN012N03LS OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance Buck converter • Very low parasitic inductance • Low profile <0.5 mm • Double side cooling VDS 30 V RDS(on),max 1.2 mW ID 50 A QOSS 34 nC QG(0V.10V) 61


    Original     		PDF BSN012N03LS IEC61249-2-21 012N03L

    Untitled

    Abstract: No abstract text available
    Text: BSN012N03LS OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance Buck converter • Very low parasitic inductance • Low profile <0.5 mm • Double side cooling VDS 30 V RDS(on),max 1.2 mW ID 50 A QOSS 34 nC QG(0V.10V) 61


    Original     		PDF BSN012N03LS IEC61249-2-21 012N03L

    Untitled

    Abstract: No abstract text available
    Text: IPA50R199CP CoolMOSTM Power Transistor Product Summary Features • Lowest figure of merit RON x Qg • Ultra low gate charge V DS @Tjmax 550 V R DS on ,max 0.199 Ω 34 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant


    Original     		PDF IPA50R199CP PG-TO220 IPA50R199CP 5R199CP

    IPA50R199CP

    Abstract: No abstract text available
    Text: IPA50R199CP CoolMOSTM Power Transistor Product Summary Features • Lowest figure of merit RON x Qg • Ultra low gate charge V DS @Tjmax 550 V R DS on ,max 0.199 Ω 34 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant


    Original     		PDF IPA50R199CP PG-TO220 IPA50R199CP PG-TO220FP 5R199CP

    0906NS

    Abstract: No abstract text available
    Text: BSC0906NS OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance Buck converter • Optimized for clean switching • 100% avalanche tested • Superior thermal resistance VDS 30 V RDS on ,max 4.5 mW ID 63 A QOSS 8.6 nC QG(0V.10V)


    Original     		PDF BSC0906NS IEC61249-2-21 0906NS 0906NS

    5r199p

    Abstract: D66A
    Text: IPP50R199CP CoolMOSTM Power Transistor Product Summary Features • Lowest figure-of -merit R ON x Qg • Ultra low gate charge V DS @Tjmax 550 V R DS on ,max 0.199 Ω 34 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant


    Original     		PDF IPP50R199CP PG-TO220 IPP50R199CP PG-TO220 5R199P 5r199p D66A

    5r199p

    Abstract: No abstract text available
    Text: IPW50R199CP CoolMOSTM Power Transistor Product Summary Features • Lowest figure of merit RON x Qg • Ultra low gate charge V DS @Tjmax 550 V R DS on ,max 0.199 Ω 34 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant


    Original     		PDF IPW50R199CP PG-TO247 IPW50R199CP PG-TO247 5R199P 5r199p

    9R1K0c

    Abstract: No abstract text available
    Text: IPI90R1K0C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS on ,max @ T J= 25°C 1.0 Ω Q g,typ 34 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPI90R1K0C3 PG-TO262 9R1K0c

    9r340c

    Abstract: No abstract text available
    Text: IPI90R340C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS on ,max @T J=25°C 0.34 Ω 94 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPI90R340C3 PG-TO262 9R340C 9r340c

    5R199P

    Abstract: 5R199 IPP50R199CP JESD22
    Text: IPP50R199CP CoolMOSTM Power Transistor Product Summary Features • Lowest figure-of -merit R ON x Qg • Ultra low gate charge V DS @Tjmax 550 V R DS on ,max 0.199 Ω 34 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant


    Original     		PDF IPP50R199CP PG-TO220 5R199P 5R199P 5R199 IPP50R199CP JESD22

    8SS138

    Abstract: GFP80N03 SFB50N03 BS170 bss138 2N7002 60V SOT-23 Fet irfz44n
    Text: MOSFETS - N CHANNEL BY VOLTAGE 20V Drain-Source Rated Trench G e n F e t Qg [nC l, Typ. Ros(on) [m n l Id Vgs = 2.5V Vgs = 4.5V [V] [A] Max Max V d s = 10V Vgs Vgs 4.5V 10V Config Package Page Dual SOT-363 - TN0205AD*'1 20 0.25 2500 2000 0.35 TN0200T


    OCR Scan     		PDF TN0205AD* TN0200T OT-363 OT-23 BSH105 GF6968A GF6968E GF9926 GF4126 8SS138 GFP80N03 SFB50N03 BS170 bss138 2N7002 60V SOT-23 Fet irfz44n