GS8162Z36B Search Results

GS8162Z18B

Abstract: GS8162Z18BB-150 GS8162Z18BB-200 GS8162Z18BB-250 GS8162Z36B GS8162Z36BB-250
Contextual Info: GS8162Z18/36B B/D 18Mb Pipelined and Flow Through Synchronous NBT SRAM 119- & 165-Bump BGA Commercial Temp Industrial Temp Features • NBT (No Bus Turn Around) functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with both pipelined and flow through NtRAM , NoBL™ and

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Abstract: GS8162Z36B-180 GS8162Z18 GS8162Z36 GS8162Z72 da334
Contextual Info: Preliminary GS8162Z18/36/72B-225/200/180/166/150/133 119 and 209 BGA Commercial Temp Industrial Temp 16Mb Pipelined and Flow Through Synchronous NBT SRAM 225 MHz–133 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Features Functional Description • NBT No Bus Turn Around functionality allows zero wait

GS8162Z18DD

Contextual Info: Preliminary GS8162Z18/36D B/D -400/375/333/250/200/150 119 & 165 BGA Commercial Temp Industrial Temp 400 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 18Mb Pipelined and Flow Through Synchronous NBT SRAM Features Because it is a synchronous device, address, data inputs, and

Contextual Info: Preliminary GS8162Z18/36/72B-250/225/200/166/150/133 18Mb Pipelined and Flow Through Synchronous NBT SRAM 119 and 209 BGA Commercial Temp Industrial Temp Features • NBT No Bus Turn Around functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with

Contextual Info: Preliminary GS8162Z18/36/72B-225/200/180/166/150/133 119 and 209 BGA Commercial Temp Industrial Temp 16Mb Pipelined and Flow through Synchronous NBT SRAM 225MHz–133MHz 2.5 V VDD 2.5 V or 3.3 V I/O Features Functional Description • User-configurable Pipeline and Flow Through mode

Contextual Info: Preliminary GS8162ZxxB B/D -xxxV 18Mb Pipelined and Flow Through Synchronous NBT SRAM 119- & 165-Bump BGA Commercial Temp Industrial Temp Features • NBT (No Bus Turn Around) functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with

GS8162Z18DD

Contextual Info: GS8162Z18/36D B/D -400/375/333/250/200/150 400 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 18Mb Pipelined and Flow Through Synchronous NBT SRAM 119 & 165 BGA Commercial Temp Industrial Temp Features Because it is a synchronous device, address, data inputs, and

Contextual Info: GS8162Z18/36D B/D -400/375/333/250/200/150 400 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 18Mb Pipelined and Flow Through Synchronous NBT SRAM 119 & 165 BGA Commercial Temp Industrial Temp Features Because it is a synchronous device, address, data inputs, and

GS8162Z18

Abstract: GS8162Z36 GS8162Z72 58-Rev e2165 13007 h3
Contextual Info: Preliminary GS8162Z18 B/D /GS8162Z36(B/D)/GS8162Z72(C) 119, 165, & 209 BGA Commercial Temp Industrial Temp 18Mb Pipelined and Flow Through Synchronous NBT SRAM Features • NBT (No Bus Turn Around) functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with

Contextual Info: GS8162Z18/36D B/D -200M 119 & 165-bump BGA Military Temp 18Mb Pipelined and Flow Through Synchronous NBT SRAM Features • Military Temperature Range • NBT (No Bus Turn Around) functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with

gs8162z18bgd

Contextual Info: Preliminary GS8162Z18/36B B/D 119- & 165-Bump BGA Commercial Temp Industrial Temp 18Mb Pipelined and Flow Through Synchronous NBT SRAM Features • NBT (No Bus Turn Around) functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with

Contextual Info: GS8162Z18/36B B/D 18Mb Pipelined and Flow Through Synchronous NBT SRAM 119- & 165-Bump BGA Commercial Temp Industrial Temp Features • NBT (No Bus Turn Around) functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with both pipelined and flow through NtRAM , NoBL™ and

Contextual Info: GS8162Z18/36D B/D -400/375/333/250/200/150 400 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 18Mb Pipelined and Flow Through Synchronous NBT SRAM 119 & 165 BGA Commercial Temp Industrial Temp Features Because it is a synchronous device, address, data inputs, and

Contextual Info: Preliminary GS8162Z18/36D B/D -400/375/333/250/200/150 119 & 165 BGA Commercial Temp Industrial Temp 400 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 18Mb Pipelined and Flow Through Synchronous NBT SRAM Features Because it is a synchronous device, address, data inputs, and

IS61LF51232-8

Abstract: IS61LV25616AL-8TL IS61LF51232 IS61LV5128L-10T GS71116AU-10E 167ML IS61NLP25636A-200TQL IS61QDB22M36 IS61LPS51236-150B IS61LV5128L-12T
Contextual Info: ISSI * - Tie down extra four I/Os with resistor + - Tie down extra two I/Os with resistor # - Connect pin 14 FT pin to Vss IS61DDB22M36-167M3 IS61DDB22M36-167M3L IS61DDB22M36-167ML IS61DDB22M36-200M IS61DDB22M36-200M3 IS61DDB22M36-200M3L IS61DDB22M36-200ML

GS8162Z18B

Abstract: GS8162Z18BB-150 GS8162Z18BB-200 GS8162Z18BB-250 GS8162Z36B GS8162Z36BB-250
Contextual Info: Preliminary GS8162Z18/36B B/D 18Mb Pipelined and Flow Through Synchronous NBT SRAM 119- & 165-Bump BGA Commercial Temp Industrial Temp Features • NBT (No Bus Turn Around) functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with

GS8162Z18BD-250V

Contextual Info: GS8162ZxxB B/D -xxxV 18Mb Pipelined and Flow Through Synchronous NBT SRAM Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the input clock. Burst order control (LBO) must be tied to a power

MT58L512L18PS-7.5

Abstract: MT58L256L18D1T-10 MT58L256L32PF-10 MT55V512V36PT-7.5 GS8162Z36BB-200 GS816032BT-150 MT55L512Y36PF-7.5 MT55L256L36FT-10 MT58L256L36FS-10 MT58L64L32PT-7.5
Contextual Info: MICRON * - Tie down extra four I/Os with resistor + - Tie down extra two I/Os with resistor # - Connect pin 14 FT pin to Vss MT55L128V32P1B-6 MT55L128V32P1B-7.5 MT55L128V32P1T-10 MT55L128V32P1T-6 MT55L128V32P1T-7.5 MT55L128V36F1B-10 MT55L128V36F1B-11 MT55L128V36F1B-12

IDT71V416L15PH

Abstract: GS881Z36BGD-150 GS74104AGJ-12 GS882Z36BGB-200 GS8161Z36BGD-250 IDT71V67802S133BGG GS84036AGT-100 IDT71V416L15PHG GS88236BGB-200 GS881Z36BGD-200
Contextual Info: IDT For Industrial Temp: Add "I" at the end of IDT and GSI part number. IDT71P72604S200BQ IDT71P72604S200BQG IDT71P72604S250BQ IDT71P72604S250BQG IDT71P72804S167BQ IDT71P72804S167BQG IDT71P72804S200BQ IDT71P72804S200BQG IDT71P72804S250BQ IDT71P72804S250BQG

Contextual Info: GS8162Z18/36B B/D 18Mb Pipelined and Flow Through Synchronous NBT SRAM 119- & 165-Bump BGA Commercial Temp Industrial Temp Features • NBT (No Bus Turn Around) functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with both pipelined and flow through NtRAM , NoBL™ and

Contextual Info: Preliminary GS8162Z18/36/72B-250/225/200/166/150/133 16Mb Pipelined and Flow Through Synchronous NBT SRAM 119 and 209 BGA Commercial Temp Industrial Temp Features • NBT No Bus Turn Around functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with

Contextual Info: GS8162Z18/36D B/D -400/375/333/250/200/150 400 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 18Mb Pipelined and Flow Through Synchronous NBT SRAM 119 & 165 BGA Commercial Temp Industrial Temp Features Because it is a synchronous device, address, data inputs, and

GS8162Z36BGD-200IV

Abstract: GS8162Z18BB-150V GS8162Z18BB-200V GS8162Z18BB-250V GS8162Z36BB-200V GS8162ZV18B GS8162ZV36B
Contextual Info: GS8162ZxxB B/D -xxxV 18Mb Pipelined and Flow Through Synchronous NBT SRAM 119- & 165-Bump BGA Commercial Temp Industrial Temp Features • NBT (No Bus Turn Around) functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with both pipelined and flow through NtRAM , NoBL™ and

GS8162Z36BD-250

Abstract: GS8162Z18B GS8162Z18BB-150 GS8162Z18BB-200 GS8162Z18BB-250 GS8162Z36B GS8162Z36BB-250
Contextual Info: GS8162Z18/36B B/D 18Mb Pipelined and Flow Through Synchronous NBT SRAM 119- & 165-Bump BGA Commercial Temp Industrial Temp Features • NBT (No Bus Turn Around) functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with both pipelined and flow through NtRAM , NoBL™ and