GS88037BT Search Results

GS88037B

Abstract: GS88037BT GS88037BT-200 GS88037BT-250 GS88037BT-300 GS88037BT-300I GS88037BT-333 GS88037BT-333I
Contextual Info: GS88037BT-333/300/250/200 256K x 36 9Mb Sync Burst SRAM 100-Pin TQFP Commercial Temp Industrial Temp Features • Single Cycle Deselect SCD operation • 2.5 V or 3.3 V +10%/–10% core power supply • 2.5 V or 3.3 V I/O supply • LBO pin for Linear or Interleaved Burst mode

Contextual Info: GS88037BT-333/300/250/200 256K x 36 9Mb Sync Burst SRAM Functional Description n fo rN Byte Write and Global Write Byte write operation is performed by using Byte Write enable BW input combined with one or more individual byte write signals (Bx). In addition, Global Write (GW) is available for

GS88037BT-300I

Abstract: GS88037BT-333 GS88037BT-333I GS88037B GS88037BT GS88037BT-200 GS88037BT-250 GS88037BT-300
Contextual Info: GS88037BT-333/300/250/200 256K x 36 9Mb Sync Burst SRAM 100-Pin TQFP Commercial Temp Industrial Temp Features • Single Cycle Deselect SCD operation • 2.5 V or 3.3 V +10%/–10% core power supply • 2.5 V or 3.3 V I/O supply • LBO pin for Linear or Interleaved Burst mode

GS88037BT-200V

Abstract: GS88037BT-250IV GS88037BT-250V
Contextual Info: GS88037BT-xxxV 256K x 36 9Mb Sync Burst SRAM 100-Pin TQFP Commercial Temp Industrial Temp Features • Single Cycle Deselect SCD operation • 1.8 V or 2.5 V +10%/–10% core power supply • 1.8 V or 2.5 V I/O supply • LBO pin for Linear or Interleaved Burst mode

GS88037B

Abstract: GS88037BT GS88037BT-200 GS88037BT-225 GS88037BT-250
Contextual Info: Preliminary GS88037BT-333/300/275/250/225/200 256K x 36 9Mb Sync Burst SRAM 100-Pin TQFP Commercial Temp Industrial Temp Features • Single Cycle Deselect SCD operation • 2.5 V or 3.3 V +10%/–10% core power supply • 2.5 V or 3.3 V I/O supply • LBO pin for Linear or Interleaved Burst mode

Contextual Info: Preliminary GS88037BT-333/300/275/250/225/200 256K x 36 9Mb Sync Burst SRAM 100-Pin TQFP Commercial Temp Industrial Temp Features • Single Cycle Deselect SCD operation • 2.5 V or 3.3 V +10%/–10% core power supply • 2.5 V or 3.3 V I/O supply • LBO pin for Linear or Interleaved Burst mode

Contextual Info: GS88037BT-333/300/250/200 256K x 36 9Mb Sync Burst SRAM Functional Description n fo rN Byte Write and Global Write Byte write operation is performed by using Byte Write enable BW input combined with one or more individual byte write signals (Bx). In addition, Global Write (GW) is available for

Contextual Info: GS88037BT-333/300/250/200 256K x 36 9Mb Sync Burst SRAM 100-Pin TQFP Commercial Temp Industrial Temp Features • Single Cycle Deselect SCD operation • 2.5 V or 3.3 V +10%/–10% core power supply • 2.5 V or 3.3 V I/O supply • LBO pin for Linear or Interleaved Burst mode