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    GT15J341 Search Results

    GT15J341 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    GT15J341
    Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 15 A, Built-in Diodes, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    GT15J341 Datasheets (3)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    GT15J341
    Toshiba Transistors Original PDF 257.27KB 10
    GT15J341
    Toshiba Japanese - Transistors Original PDF 374.68KB 10
    GT15J341
    Toshiba GT15J341 - TRANSISTOR IGBT, Insulated Gate BIP Transistor Original PDF 257.29KB 10
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    GT15J341 Price and Stock

    Toshiba America Electronic Components

    Toshiba America Electronic Components GT15J341,S4X

    IGBT 600V 15A TO-220SIS
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    DigiKey GT15J341,S4X Tube 128 1
    • 1 $2.93
    • 10 $2.93
    • 100 $1.32
    • 1000 $0.98
    • 10000 $0.93
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    Avnet Americas GT15J341,S4X Tube 24 Weeks 50
    • 1 -
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    • 100 $1.28
    • 1000 $0.89
    • 10000 $0.89
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    Mouser Electronics GT15J341,S4X
    • 1 $2.80
    • 10 $1.46
    • 100 $1.31
    • 1000 $0.93
    • 10000 $0.93
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    Toshiba America Electronic Components GT15J341,S4X(S

    Transistor: IGBT; 600V; 15A; 30W; TO220FP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME GT15J341,S4X(S 185 1
    • 1 $1.72
    • 10 $1.38
    • 100 $1.24
    • 1000 $1.24
    • 10000 $1.24
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    EBV Elektronik GT15J341,S4X(S 700 21 Weeks 50
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    New Advantage Corporation GT15J341,S4X(S 550 1
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    • 100 $3.77
    • 1000 $3.48
    • 10000 $3.48
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    GT15J341 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    GT15J341

    Contextual Info: GT15J341 Discrete IGBTs Silicon N-Channel IGBT GT15J341 1. Applications • Motor Drivers 2. Features 1 Sixth generation (2) Low saturation voltage: VCE(sat) = 1.5 V (typ.) (IC = 15 A) (3) FRD included between emitter and collector 3. Packaging and Internal Circuit


    Original
    GT15J341 O-220SIS GT15J341 PDF

    Contextual Info: GT15J341 ディスクリートIGBT シリコンNチャネルIGBT GT15J341 1. 用途 • モータドライブ用 2. 特長 1 第6世代品 (2) 飽和電圧が低い: VCE(sat) = 1.5 V (標準) (IC = 15 A) (3) エミッタコレクタ間にFRDを内蔵


    Original
    GT15J341 O-220SIS PDF

    Contextual Info: GT15J341 Discrete IGBTs Silicon N-Channel IGBT GT15J341 1. Applications • Motor Drivers 2. Features 1 Sixth generation (2) Low saturation voltage: VCE(sat) = 1.5 V (typ.) (IC = 15 A) (3) FRD included between emitter and collector 3. Packaging and Internal Circuit


    Original
    GT15J341 O-220SIS PDF