GT50J122 Search Results

GT50J122 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
GT50J122		Toshiba	N-channel IGBT	Original	PDF	177.28KB	6
GT50J122		Toshiba	Discrete IGBTs	Original	PDF	539.84KB	16

GT50J122 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: GT50J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J122 Current Resonance Inverter Switching Application • Unit: mm Enhancement mode type • High speed : tf = 0.16 µs typ. (IC = 60A) • Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A)	Original	GT50J122 2-16C1CHIBA	PDF
GT50J122 Contextual Info: GT50J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J122 Current Resonance Inverter Switching Application • Enhancement mode type • High speed : tf = 0.16 s typ. (IC = 60A) • Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A)	Original	GT50J122 GT50J122	PDF
Contextual Info: GT50J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J122 Current Resonance Inverter Switching Application • Unit: mm Enhancement mode type • High speed : tf = 0.16 µs typ. (IC = 60A) • Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A)	Original	GT50J122	PDF
TOSHIBA IGBT DATA BOOK Abstract: GT50J122 Contextual Info: GT50J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J122 Current Resonance Inverter Switching Application • Unit: mm Enhancement-mode • High speed : tf = 0.16 µs typ. (IC = 60A) • Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A)	Original	GT50J122 31oducts TOSHIBA IGBT DATA BOOK GT50J122	PDF
GT30J124 Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123 Contextual Info: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.	Original	BCE0010E BCE0010F GT30J124 GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123	PDF
transistor bc 245 Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243	Original	SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122	PDF
GT45F122 Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124 Contextual Info: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor	Original	BCE0010D S-167 BCE0010E GT45F122 gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124	PDF
GT30F121 Abstract: GT30G121 GT30G131 MG30T1AL1 GT30*122 GT45F12 MG60M1AL1 gt30f GT60M301 GT60M101 Contextual Info: 2005-3 PRODUCT GUIDE Discrete IGBTs semiconductor http://www.semicon.toshiba.co.jp/eng Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive. ● The conductivity modulation characteristics of a bipolar transistor make it ideal for applications	Original	BCE0010A GT30F121 GT30G121 GT30G131 MG30T1AL1 GT30*122 GT45F12 MG60M1AL1 gt30f GT60M301 GT60M101	PDF